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141.
T. -Y. Chen 《Structural and Multidisciplinary Optimization》1992,4(3-4):179-185
A design optimization procedure using a sequential linear programming technique is proposed in this paper to design minimum weight structures subjected to frequency response and static displacement constraints. The merit of the proposed approach is that the reanalyses of the static and dynamic responses, as well as the computations of the static and dynamic sensitivity data, are performed in a reduced approximate model. A significant saving of computer time for large scale structures is expected. Two numerical examples show good results of this method. 相似文献
142.
Haitao Zhang Zonghai Chen Yongji Wang Ming Li Ting Qin 《International Journal of Adaptive Control and Signal Processing》2006,20(2):53-76
Laguerre Functional Model has many advantages such as good approximation capability for the variances of system time‐delay, order and other structural parameters, low computational complexity, and the facility of online parameter identification, etc., so this model is suitable for complex industrial process control. A series of successful applications have been gained in linear and non‐linear predictive control fields by the control algorithm based on Laguerre Functional Model, however, former researchers have not systemically brought forward the theoretical analyses of the stability, robustness, and steady‐state performance of this algorithm, which are the keys to guarantee the feasibility of the control algorithm fundamentally. Aimed at this problem, we introduce the principles of the Incremental Mode Linear Laguerre Predictive Control (IMLLPC) algorithm, and then systemically propose the theoretical analyses and proofs of the stability and robustness of the algorithm, in addition, we also put forward the steady‐state performance analysis. At last, the control performances of this algorithm on two different physical industrial plants are presented in detail, and a number of experimental results validate the feasibility and superiority of IMLLPC algorithm. Copyright © 2005 John Wiley & Sons, Ltd. 相似文献
143.
��Through comparable study of gas well capacity,a simple method is obtained to calculate absolute open flow and to predict production performance of gas well. Only a "single point" data carried out in back pressure test is needed to use this method. Its effectiveness is verified by conventional well testing data in 31 wells of 31 gasfields. 相似文献
144.
STUDYONRESIDUESOF~(14)C-FENITROTHIONINMODELRICE-FISHECOSYSTEMANDFIELDRICE-FISHECOSYSTEMZhangZhongliang(张仲良);WangHuaxin(王化新);G?.. 相似文献
145.
Wang F.-Y. Gildea K. Jungnitz H. Chen D.D. 《Industrial Electronics, IEEE Transactions on》1994,41(6):641-653
The manufacturing message specification (MMS) is the ISO standard communication protocol specific to manufacturing. To analyze MMS design and performance, service unit automats are introduced to represent individual MMS services, while service connection Petri Nets (PNs) are constructed from these automats to describe MMS service connections and processes. This approach makes MMS protocol specification and analysis possible in terms of well-developed concepts and methods in PN theory. It leads to a distributed and hierarchical model of MMS software system by integrating service connection PNs. A generalized stochastic PN for MMS performance evaluation is obtained by incorporating service parameters and time factors into the model. A technique based on T-invariants is used to simplify the performance analysis 相似文献
146.
Ma Z.J. Chen J.C. Liu Z.H. Krick J.T. Cheng Y.C. Hu C. Ko P.K. 《Electron Device Letters, IEEE》1994,15(3):109-111
It has been reported that high-temperature (~1100°C) N2 O-annealed oxide can block boron penetration from poly-Si gates to the silicon substrate. However, this high-temperature step may be inappropriate for the low thermal budgets required of deep-submicron ULSI MOSFETs. Low-temperature (900~950°C) N2O-annealed gate oxide is also a good barrier to boron penetration. For the first time, the change in channel doping profile due to compensation of arsenic and boron ionized impurities was resolved using MOS C-V measurement techniques. It was found that the higher the nitrogen concentration incorporated at Si/SiO2 interface, the more effective is the suppression of boron penetration. The experimental results also suggest that, for 60~110 Å gate oxides, a certain amount of nitrogen (~2.2%) incorporated near the Si/SiO2 interface is essential to effectively prevent boron diffusing into the underlying silicon substrate 相似文献
147.
Shye Lin Wu Chung Len Lee Tan Fu Lei Chen C.F. Chen L.J. Ho K.Z. Ling Y.C. 《Electron Device Letters, IEEE》1994,15(4):120-122
In this study, it is demonstrated that the incorporation of fluorine can enhance poly-Si/Si interfacial oxide break-up in the poly-Si emitter contacted p+-n shallow junction formation. The annealing temperature for breaking up the poly-Si/Si interfacial oxide has been found to be as low as 900°C. As a result, the junction depth of the BF2-implanted device is much larger than that of the boron-implanted device 相似文献
148.
采用稀土氧化物和无机化合物的复合物(不简称RI-复合物)作为搪瓷釉浆悬浮剂,使之全部或大部分代替粘土,进行了一系列试验,已获得成功,突破了长期来搪瓷工业离不开粘土的传统工艺,并实现了工业化生产。 相似文献
149.
150.