一种新的覆盖粗糙集及其模糊性度量

在覆盖近似空间中定义了一类新的模糊集,给出了该类模糊集的模糊性度量,讨论模糊集及其模糊度量的性质,最后通过实例给出直观解释.     

Reducing control points in lofted B-spline surface interpolation using common knot vector determination

A new algorithm for reducing control points in lofted surface interpolation to rows of data points is presented in this paper. The key step of surface lofting is to obtain a set of compatible B-spline curves interpolating each row. Given a set of points and their parameterization, a necessary and sufficient condition is proposed to determine the existence of interpolating B-spline curves defined on a given knot vector. Based on this condition, we first properly construct a common knot vector that guarantees the existence of interpolating B-spline curves to each row of points. Then we calculate a set of interpolating B-spline curves defined on the common knot vector by energy minimization. Using this method, fewer control points are employed while maintaining a visually pleasing shape of the lofted surface. Several experimental results demonstrate the usability and quality of the proposed method.     

2D Bi2O2Te Semiconductor with Single-Crystal Native Oxide Layer

Following logic in the silicon semiconductor industry, the existence of native oxide and suitable fabrication technology is essential for 2D semiconductors in planar integronics, which are surface-sensitive to typical coating technologies. To date, very few types of integronics are found to possess this feature. Herein, the 2D Bi₂O₂Te developed recently is reported to possess large-area synthesis and controllable thermal oxidation behavior toward single-crystal native oxides. This shows that surface-adsorbed oxygen atoms are inclined to penetrate across [Bi₂O₂]_n²ⁿ⁺ layers and bond with the underlying [Te]_n²ⁿ⁻ at elevated temperatures, transforming directly into [TeO₄]_n²ⁿ⁻ with the basic architecture remaining stable. The oxide can be adjusted to form in an accurate layer-by-layer manner with a low-stress sharp interface. The native oxide Bi₂TeO₆ layer (bandgap of ≈2.9 eV) exhibits visible-light transparency and is compatible with wet-chemical selective etching technology. These advances demonstrate the potential of Bi₂O₂Te in planar-integrated functional nanoelectronics such as tunnel junction devices, field-effect transistors, and memristors.     

A 2.20 eV Bandgap Polymer Donor for Efficient Colorful Semitransparent Organic Solar Cells

Semitransparent organic solar cells (ST-OSCs) have attracted increasing attention due to their promising prospect in building-integrated photovoltaics. Generally, efficient ST-OSCs with good average visible transmittance (AVT) can be realized by developing active layer materials with light absorption far from the visible light range. Herein, the development of ultrawide bandgap polymer donors with near-ultraviolet absorption, paired with near-infrared acceptors, is proposed to achieve high-performance ST-OSCs. The key points for the design of ultrawide bandgap polymers include constructing donor–donor type conjugated skeleton, suppressing the quinoidal resonance effect, and minimizing the twist of conjugated skeleton via noncovalent conformational locks. As a proof of concept, a polymer named PBOF with an optical bandgap of 2.20 eV is synthesized, which exhibited largely reduced overlap with the human eye photopic response spectrum and afforded a power conversion efficiency (PCE) of 16.40% in opaque device. As a result, ST-OSCs with a PCE over 10% and an AVT over 30% are achieved without optical modulation. Moreover, colorful ST-OSCs with visual aesthetics can be achieved by tuning the donor/acceptor weight ratio in active layer benefiting from the ultrawide bandgap nature of PBOF. This study demonstrates the great potential of ultrawide bandgap polymers for efficient colorful ST-OSCs.     

Semi-supervised transformable architecture search for feature distillation

Pattern Analysis and Applications - The designed method aims to perform image classification tasks efficiently and accurately. Different from the traditional CNN-based image classification methods,...     

An improved Henry gas solubility optimization for optimization tasks

Applied Intelligence - The henry gas solubility optimization (HGSO) is a new nature-inspired algorithm that mimics Henry Gas Solubility to solve global optimization problems. The main changes of...     

Prediction of NSCLC recurrence from microarray data with GEP

Lung cancer is one of the deadliest diseases in the world. Non‐small cell lung cancer (NSCLC) is the most common and dangerous type of lung cancer. Despite the fact that NSCLC is preventable and curable for some cases if diagnosed at early stages, the vast majority of patients are diagnosed very late. Furthermore, NSCLC usually recurs sometime after treatment. Therefore, it is of paramount importance to predict NSCLC recurrence, so that specific and suitable treatments can be sought. Nonetheless, conventional methods of predicting cancer recurrence rely solely on histopathology data and predictions are not reliable in many cases. The microarray gene expression (GE) technology provides a promising and reliable way to predict NSCLC recurrence by analysing the GE of sample cells. This study proposes a new model from GE programming to use microarray datasets for NSCLC recurrence prediction. To this end, the authors also propose a hybrid method to rank and select relevant prognostic genes that are related to NSCLC recurrence prediction. The proposed model was evaluated on real NSCLC microarray datasets and compared with other representational models. The results demonstrated the effectiveness of the proposed model.Inspec keywords: lung, cancer, lab‐on‐a‐chip, genetics, patient diagnosisOther keywords: NSCLC recurrence prediction, microarray data, GE programming, nonsmall cell lung cancer, cancer recurrence, histopathology data, microarray gene expression, prognostic genes     

Epitaxial growth and thermal-conductivity limit of single-crystalline Bi2Se3/In2Se3 superlattices on mica

Nano Research - Thermal transport in superlattices is governed by various phonon-scattering processes. For extracting the phonon-scattering contribution of hetero-interfaces in chalcogenide...     

基于数字兆欧表自动切换档位的研究与实现

随着电力、电气设备的日益复杂化,对于其安全性能也有了更高的要求,数字兆欧表作为测量绝缘阻值的重要工具,已在工业领域中广泛应用;为了满足测量精度以及兆欧表的可靠性,通过基于S3C2440的嵌入式平台,提出了一种基于数字兆欧表的自动切换档位的实现方案,以达到更加精确的测量;此方案通过判断采集到的电压值选择相应的采样电阻来实现,并结合硬件平台和软件设计,分别介绍了驱动程序和应用程序的编写与测试,并很好地应用到了实际电路中;经测试,能够达到预期的效果,测量精度高,测量误差控制在±2%。