首页 | 本学科首页   官方微博 | 高级检索  
文章检索
  按 检索   检索词:      
出版年份:   被引次数:   他引次数: 提示:输入*表示无穷大
  收费全文   284933篇
  免费   78530篇
  国内免费   51162篇
电工技术   34628篇
技术理论   10篇
综合类   29143篇
化学工业   39419篇
金属工艺   30885篇
机械仪表   13070篇
建筑科学   19987篇
矿业工程   16308篇
能源动力   11256篇
轻工业   29469篇
水利工程   9481篇
石油天然气   18259篇
武器工业   4585篇
无线电   40411篇
一般工业技术   40100篇
冶金工业   11394篇
原子能技术   2495篇
自动化技术   63725篇
  2024年   3130篇
  2023年   5983篇
  2022年   8047篇
  2021年   9821篇
  2020年   11737篇
  2019年   20362篇
  2018年   22058篇
  2017年   23739篇
  2016年   23229篇
  2015年   23459篇
  2014年   23274篇
  2013年   23397篇
  2012年   23499篇
  2011年   20637篇
  2010年   18808篇
  2009年   15254篇
  2008年   13516篇
  2007年   12564篇
  2006年   11123篇
  2005年   9747篇
  2004年   11127篇
  2003年   9597篇
  2002年   9542篇
  2001年   8274篇
  2000年   6987篇
  1999年   6525篇
  1998年   5398篇
  1997年   4777篇
  1996年   4598篇
  1995年   4383篇
  1994年   3526篇
  1993年   3138篇
  1992年   2929篇
  1991年   2176篇
  1990年   1684篇
  1989年   1542篇
  1988年   1197篇
  1987年   398篇
  1986年   342篇
  1985年   236篇
  1984年   172篇
  1983年   121篇
  1982年   166篇
  1981年   160篇
  1980年   136篇
  1976年   229篇
  1975年   205篇
  1972年   236篇
  1971年   127篇
  1960年   205篇
排序方式: 共有10000条查询结果,搜索用时 15 毫秒
41.
反应堆屏蔽计算中经常出现厚屏蔽、小探测器问题,常规蒙特卡罗方法难以有效解决。基于自动重要抽样(AIS)方法,本文提出了小探测器自动重要抽样(SDAIS)方法,并针对小探测器问题,优化了AIS方法的虚粒子赌分裂算法。该方法在自主开发的蒙特卡罗屏蔽程序MCShield上进行了实现。使用NUREG/CR-6115 PWR基准题验证该方法的正确性和计算效率。结果表明,SDAIS方法可有效地解决厚屏蔽小探测器问题,相比AIS方法及传统的重要性方法,计算效率提升1~2个量级。  相似文献   
42.
Amphotericin B (AMB) was often used in intra-articular injection administration for fungal arthritis, because it could often bring a satisfactory therapeutic efficacy and a minimum systemic toxic side effect. However, because of the multiple operations and the frequent injections, the compliance of the patients was bad. Therefore, to develop a long-term sustained-released preparation of AMB for mycotic arthritis intra-articular administration is of great significance. The purpose of present study was to develop a long-term sustained-released in situ gel of a water-insoluble drug AMB for mycotic arthritis intra-articular administration. Based on the evaluations of the in vitro properties of the formulations, the formulation containing 10% (w/w) ethanol, 15% (w/w) PG, 0.75% (w/w) HA, 5% (w/w) purified soybean oil, 0.03% (w/w) α-tocopherol, 15% (w/w) water and 55% (w/w) glyceryl monooleate was selected as a suitable intra-articular injectable in situ gel drug delivery system for water-insoluble drug AMB. Furthermore, the results of the in vivo study on rabbits showed that the selected formulation was a safe and effective long-term sustained-released intra-articular injectable AMB preparation. Therefore, the presented in situ AMB gel could reduce the frequency of the administration in the AMB treatment of fungal arthritis, and then would get a good patient compliance.  相似文献   
43.
Within the framework of the effective-mass approximation and the dipole approximation, considering the three-dimensional confinement of the electron and hole and the strong built-in electric field(BEF) in strained wurtzite Zn O/Mg0:25Zn0:75O quantum dots(QDs), the optical properties of ionized donor-bound excitons(D+, X)are investigated theoretically using a variational method. The computations are performed in the case of finite band offset. Numerical results indicate that the optical properties of(D+, X) complexes sensitively depend on the donor position, the QD size and the BEF. The binding energy of(D+, X) complexes is larger when the donor is located in the vicinity of the left interface of the QDs, and it decreases with increasing QD size. The oscillator strength reduces with an increase in the dot height and increases with an increase in the dot radius. Furthermore, when the QD size decreases, the absorption peak intensity shows a marked increment, and the absorption coefficient peak has a blueshift. The strong BEF causes a redshift of the absorption coefficient peak and causes the absorption peak intensity to decrease remarkably. The physical reasons for these relationships have been analyzed in depth.  相似文献   
44.
Semiconductor particles doped Al2O3 coatings were prepared by cathode plasma electrolytic deposition in Al(NO3)3 electrolyte dispersed with SiC micro- and nano-particles (average particle sizes of 0.5–1.7?µm and 40?nm respectively). The effects of the concentrations and particle sizes of the SiC on the microstructures and tribological performances of the composite coatings were studied. In comparison with the case of dispersing with SiC microparticles, the dispersion of SiC nanoparticles in the coatings was more uniform. When the concentration of SiC nanoparticles was 5?g/L, the surface roughness of the composite coating was reduced by 63%, compared with that of the unmodified coating. Friction results demonstrated that the addition of 5?g/L SiC nanoparticles reduced the friction coefficient from 0.60 to 0.38 and decreased the wear volume under dry friction. The current density and bath voltage were measured to analyze the effects of SiC particles on the deposition process. The results showed that the SiC particles could alter the electrical behavior of the coatings during the deposition process, weaken the bombardment of the plasma, and improve the structures of the coatings.  相似文献   
45.
Li  Yuesong  Li  Shunlei  Guo  Kunyi  Fang  Xia  Habibi  Mostafa 《Engineering with Computers》2020,38(1):703-724

This research presents bending responses of FG-GPLRC plates based upon higher order shear deformation theory (HSDT) for various sets of boundary conditions. The rule of the mixture and modified Halpin–Tsai model are engaged to provide the effective material constant of the composite layers. By employing Hamilton’s principle, the governing equations of the structure are derived and solved with the aid of the differential quadrature method (DQM). Afterward, a parametric study is done to present the effects of three kinds of FG patterns, weight fraction of the GPLs, radius ratio, and thickness to inner radius ratio on the bending characteristics of the FG-GPLRC disk. Numerical results reveal that in the initial value of the \(Zt/h\), using more GPLs for reinforcing the structure provides an increase in the normal stresses but this matter is inverse for the higher value of the \(Zt/h\). The results show that considering the smaller radius ratio is a reason for boosting the shear stresses of the structure for each \(Zt/h\). Another consequence is that for the negative value of \(Zt/h\), it is true that by increasing \(h/{R}_{i}\) , the normal stresses increases but if there is positive value for \(Zt/h\), the radial and circumferential stresses fall down by having an increase in the \(h/{R}_{i}\).

  相似文献   
46.
Yang  Xi  Gao  Ling  Guo  Qing  Li  Yongjiang  Ma  Yue  Yang  Ju  Gong  Changyang  Yi  Cheng 《Nano Research》2020,13(10):2579-2594

Over the past decade, numerous studies have attempted to enhance the effectiveness of radiotherapy (external beam radiotherapy and internal radioisotope therapy) for cancer treatment. However, the low radiation absorption coefficient and radiation resistance of tumors remain major critical challenges for radiotherapy in the clinic. With the development of nanomedicine, nanomaterials in combination with radiotherapy offer the possibility to improve the efficiency of radiotherapy in tumors. Nanomaterials act not only as radiosensitizers to enhance radiation energy, but also as nanocarriers to deliver therapeutic units in combating radiation resistance. In this review, we discuss opportunities for a synergistic cancer therapy by combining radiotherapy based on nanomaterials designed for chemotherapy, photodynamic therapy, photothermal therapy, gas therapy, genetic therapy, and immunotherapy. We highlight how nanomaterials can be utilized to amplify antitumor radiation responses and describe cooperative enhancement interactions among these synergistic therapies. Moreover, the potential challenges and future prospects of radio-based nanomedicine to maximize their synergistic efficiency for cancer treatment are identified.

  相似文献   
47.
A series of anionic conjugated polyelectrolytes (CPEs) is synthesized based on poly(fluorene-co-phenylene) by varying the side-chain ionic density from two to six per repeat units (MPS2-TMA, MPS4-TMA, and MPS6-TMA). The effect of MPS2, 4, 6-TMA as interlayers on top of a hole-extraction layer of poly(bis(4-phenyl)-2,4,6-trimethylphenylamine (PTAA) is investigated in inverted perovskite solar cells (PeSCs). Owing to the improved wettability of perovskites on hydrophobic PTAA with the CPEs, the PeSCs with CPE interlayers demonstrate a significantly enhanced device performance, with negligible device-to-device dependence relative to the reference PeSC without CPEs. By increasing the ionic density in the MPS-TMA interlayers, the wetting, interfacial defect passivation, and crystal growth of the perovskites are significantly improved without increasing the series resistance of the PeSCs. In particular, the open-circuit voltage increases from 1.06 V for the PeSC with MPS2-TMA to 1.11 V for the PeSC with MPS6-TMA. The trap densities of the PeSCs with MPS2,4,6-TMA are further analyzed using frequency-dependent capacitance measurements. Finally, a large-area (1 cm2) PeSC is successfully fabricated with MPS6-TMA, showing a power conversion efficiency of 18.38% with negligible hysteresis and a stable power output under light soaking for 60 s.  相似文献   
48.
49.
50.
We investigate the effect of dopant random fluctuation on threshold voltage and drain current variation in a two-gate nanoscale transistor. We used a quantum-corrected technology computer aided design simulation to run the simulation (10000 randomizations). With this simulation, we could study the effects of varying the dimensions (length and width), and thicknesses of oxide and dopant factors of a transistor on the threshold voltage and drain current in subthreshold region (off) and overthreshold (on). It was found that in the subthreshold region the variability of the drain current and threshold voltage is relatively fixed while in the overthreshold region the variability of the threshold voltage and drain current decreases remarkably, despite the slight reduction of gate voltage diffusion (compared with that of the subthreshold). These results have been interpreted by using previously reported models for threshold current variability, load displacement, and simple analytical calculations. Scaling analysis shows that the variability of the characteristics of this semiconductor increases as the effects of the short channel increases. Therefore, with a slight increase of length and a reduction of width, oxide thickness, and dopant factor, we could correct the effect of the short channel.  相似文献   
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号