原油集输工艺流程的(火用)分析评价

不同原油集输工艺流程的能耗有很大差异.本文采用(火用)分析方法对掺热油和掺热水两种集输流程进行了评价,得出的结论是掺热油流程优于掺热水流程,对集输站子系统来说,结论则相反.     

基于矩的异分辨率图象边界检测

（１）本文引入仿射变换，提出了一种用矩算子以民分辨率图象直接进行边界检测的方法，利用同分辨率图象正方形窗口的模板行矩的计算，推导出了相应用的边界参数公式。（２）本文提出一种隐线笥插值矩计算方法，得到一组与正方形窗口对应的正方形模板，避免了费时的预插值过程，（３）对本文提出的方法进行了实验验证，并给出了实验结果。     

大规模集成电路浮栅ROM器件总剂量辐射效应

提出了一种大规模集成电路总剂量效应测试方法:在监测器件和电路功能参数的同时,监测器件功耗电流的变化情况,分析数据错误和器件功耗电流与辐射总剂量的关系.根据该方法利用60Co γ射线进行了浮栅ROM集成电路(AT29C256)总剂量辐照实验,研究了功耗电流和出错数量在不同γ射线剂量率辐照下的总剂量效应,以及参数失效与功能失效时间随辐射剂量率的变化关系,并利用外推实验技术预估了电路在空间低剂量率环境下的失效时间.     

High voltage (>1kV) and high current gain (32) 4H-SiC power BJTs using Al-free ohmic contact to the base

This letter reports the design and fabrication of 4H-SiC bipolar junction transistors with both high voltage (>1kV) and high dc current gain (/spl beta/=32) at a collector current level of I/sub c/=3.83A (J/sub c/=319 A/cm/sup 2/). An Al-free base ohmic contact has been used which, when compared with BJTs fabricated with Al-based base contact, shows clearly improved blocking voltage. A specific on-resistance of 17 m/spl Omega//spl middot/cm/sup 2/ has been achieved for collector current densities up to 289 A/cm/sup 2/.     

Fabrication and characteristics of high-speed implant-confined index-guided lateral-current 850-nm vertical cavity surface-emitting lasers

Process technology of high-speed implant-apertured index-guide lateral-current-injection top dielectric-mirror quantum-well 850-nm vertical cavity surface-emitting lasers (VCSELs) has been developed. Oxygen and helium implantation for aperture definition and extrinsic capacitance reduction, dielectric mirror formation, p- and n-ohmic contact formation, VCSEL resistance, and thermal analysis were investigated. Employing this technology, GaAs/AlGaAs-based 850-nm VCSELs with small signal modulation bandwidths up to 11.5 Gb/s and an eye diagram generated at 12 Gb/s by a pseudorandom bit sequence of 2/sup 31/-1 were achieved. The bit-error rates were below 10/sup -13/. The threshold current is as low as 0.8 mA for 7-/spl mu/m-diameter current apertures and typical slope efficiencies of 0.45-0.5 mA/mW were obtained.     

用屏蔽暂堵技术封堵水平井裂缝性漏层

克拉玛依油田HW702水平井的大斜度段和水平段,将穿越纵向裂缝发育的二叠系佳木河组储层。为安全钻进和保护油层,用超细碳酸钙和磺化沥青复配后加入复合离子钻井液中成屏蔽暂堵的堵漏钻井液。室内用岩心试验,屏蔽暂堵后渗透率可降为0,暂堵深度小于3cm,可用酸化和射孔解堵。现场使用效果也很好,使HW702水平井顺利完钻,并获得工业油气流。