Cast bulk ZrTiAlCuNi amorphous alloys

Cylindrical bulk amorphous samples with diameters up to 10 mm have been prepared by casting ZrTiAlCuNi alloys in a copper mould. In order to rank glass-forming ability as a function of alloy composition, alloys were also cast into wedge-shaped moulds; to a first approximation, the thickness of the amorphous region obtained can be taken as an indication of glass-forming ability. The compositions which lead to the production of bulk glasses all have reduced glass transition temperatures in excess of 0.65 and the extremely high glass-forming ability of these compositions is discussed. We suggest that both the Al and Ti contents are determining factors for the production of bulk amorphous samples and these are believed to reduce the driving force for, and hence the rate of, crystallisation. These amorphous alloys have been found to display high thermal stability and can be annealed for several minutes in the supercooled liquid region. They are ductile at room temperature and have a high value of yield stress.     

Numerical electromagnetic simulator termination de-embeddingtechnique

The authors report a novel approach whereby transmission-line end effects can be assessed by numerical simulation without recourse to the evaluation of the propagation properties of the line interconnecting the termination and excitation signal launch planes. As an example of the new technique, a microstrip open-ended line termination simulated by the finite-difference time-domain method is reported. The simulated results are compared with those obtained for the same structure but by a conventional numerical de-embedding scheme. The method presented is completely general and can be applied to any numerical electromagnetic field simulation method solving one-port or multiport networks     

Use of the nuclear microprobe at the University of Arizona for the study of heavy metal deposition in rabbit renal tissue

Industrial wastes consigned to disposal sites frequently contain substantial amounts of heavy metals. We have successfully applied proton induced X-ray emission analysis (PIXE) in the conduct of heavy metal (Hg, Cd, Cr, As) toxicity studies using precision cut rabbit renal cortical slices. The large beam diameter (4000 μm) of the proton macroprobe at The University of Arizona Ion Beam Analysis facility allowed an overall concentration of the metal(s) of interest in the samples to be determined, but lacked the ability to resolve point concentrations in the tissue. The ability to locate these areas has now been made available to us with the addition of a rastering microprobe (μ-PIXE) to the facility. Studies now being conducted in our laboratory using this micro-technique include analysis of renal tissue taken from rabbits injected intraperitoneally with HgCl₂, K₂Cr₂O₇, and NaAsO₂. The small beam size (3 μm) and the ability to raster this beam over areas of up to 125 μm × 125 μm has allowed regional mapping of endogenous and non-endogenous metal concentrations and revealed trends in heavy metal deposition in in vivo treated renal tissue, significantly increasing the amount of information obtained from these animal studies using PIXE alone. The combination of small beam size, high resolution, and multi-element detection makes μ-PIXE a powerful tool for investigating the impact of non-endogenous metals on the kidney.     

Fivefold symmetry in real and reciprocal spaces

Tetrahedrally close-packed structures with juxtaposed pentagonal antiprisms, such as the μ, C14 Laves and the newly found C phases, were studied by means of HREM and SAD. It was found that each bright spot in the structural image corresponds to an antiprism. Differently oriented domains of these phases intergrow frequently with a fairly good match at the interphase boundary. All diffraction patterns of these phases show a fivefold distribution of spot-pairs, and it is shown that this fivefold symmetry comes from the pentagons and spot-pairs from two pentagonal prisms superposed in antisymmetrical positions.     

AC hot-carrier effects in MOSFETs with furnaceN2O-nitrided gate oxides

AC hot-carrier effects in n-MOSFETs with thin (~85 Å) N₂O-nitrided gate oxides have been studied and compared with control devices with gate oxides grown in O₂. Results show that furnace N₂O-nitrided oxide devices exhibit significantly reduced AC-stress-induced degradation. In addition, they show weaker dependences of device degradation on applied gate pulse frequency and pulse width. Results suggest that the improved AC-hot-carrier immunity of the N₂O-nitrided oxide device may be due to the significantly suppressed interface state generation and neutral electron trap generation during stressing