Erratum to: Efficient keyword search over graph-structured data based on minimal covered r-cliques

Frontiers of Information Technology & Electronic Engineering - Unfortunately the second author’s name has been misspelt. It should be read: Abbas NIKNAFS.     

Untersuchung der Legierung THX 540 (AlMg5Si2Mn) in Abhängigkeit von verwendeten Thixoparametern

In this study the entire thixocasting process was examined. The aim was to optimize the process and thus improve the quality of the as-cast part. To successfully produce a thixocast part, the choice of appropriate alloy composition, the appropriate microstructure within the billet and the appropriate heat treatment of the billets into the semisolid state were found to be critical. In order to determine the influence of the alloy composition on fraction solid, simulations using Thermocalc® were conducted. For the special microstructure of the billets the cell size was examined. To determine the characteristics of the castings the circularity, the intermetallic phases (examined with SEM) and the casting defects were investigated. The casting examined was manufactured for use in the automobile industry.     

Controlling the Diffusion of Runaway Electrons by Safety Factor Changes in IR-T1 Tokamak

The high-energy current of runaway electrons during a major disruption in tokamak reactors can cause serious damage to the first wall of the reactor and reduce its lifetime. Therefore, it is important to find methods for decreasing the generation of runaway electrons and their energy. The safety factor plays an important role in determining the stability criteria for a wide range of MHD modes. Since runaway electrons suffer only rarely from collisions and are hardly sensitive to electrostatic turbulence, their transport is governed by the magnetic lines structure. On the other hand, since the safety factor is related to the magnetic lines structure, changes in safety factor may have important effects on the diffusion of runaway electrons. In this paper, the generation of runaway electrons and their transport is investigated theoretically. Moreover, by changing the discharge voltage of ohmic and toroidal capacitors, different values of the edge safety factor is generated. In fact, in this experiment, the researchers try to increase the diffusion of runaway electrons by using safety factor changes in the IR-T1 tokamak.     

Comparison between two types of Artificial Neural Networks used for validation of pharmaceutical processes

Two types of Artificial Neural Networks (ANNs), a Multi-Layer Perceptron (MLP) and a Generalized Regression Neural Network (GRNN), have been used for the validation of a fluid bed granulation process. The training capacity and the accuracy of these two types of networks were compared. The variations of the ratio of binder solution to feed material, product bed temperature, atomizing air pressure, binder spray rate, air velocity and batch size were taken as input variables for training the MLP and GRNN. The properties of size, size distribution, flow rate, angle of repose and Hausner's ratio of granules produced, were measured and used as output variables. Qualitatively, the two networks gave comparable results, as both pointed out the importance of the binder spray rate and the atomizing air pressure to the granulation process. However, the averaged absolute error of the MLP was higher than the averaged absolute error of the GRNN. Furthermore, the correlation coefficients between the experimentally determined and the calculated output values, the corresponding prediction accuracy for the different granule properties as well as the overall prediction accuracy using GRNN were better than using MLP. In conclusion, the comparison of two different networks (MLP, a so-called feed-forward back-propagation network and GRNN, a so-called Bayesian Neural Network) showed the higher capacity of the latter for validation of such granulation processes.     

Two Semi-Empirical Methods for Determination of Shafranov Shift in IR-T1 Tokamak

In this paper we present two semi-empirical methods for determination of Shafranov shift in IR-T1 tokamak. In the first method, solution of the Grad–Shafranov equation present, and one relation for Shafranov shift obtained, also in second method according to magnetic fields distribution around the plasma, second relation for the Shafranov shift obtained. Based on the two methods, four magnetic pickup coils were designed, constructed, and installed on the outer surface of the IR-T1 tokamak chamber and then Shafranov shift determined from them. Results of the two methods are in good agreement with each other.     

Influence of temperature and frequency on electrical properties of electron beam evaporated bromoaluminum phthalocyanine, BrAlPc, thin films

The AC electrical properties of electron beam evaporated Bromoaluminum phthalocyanine (BrAlPc) thin films have been studied in the frequency range 10²–10⁵ Hz and in the temperature range of 303–413 K. The BrAlPc thin films are characterized by field emission scanning electron microscopy (FESEM). The capacitance is found to be sensitive to the frequency and increases with increasing temperature and decreases with increasing frequency. A loss minimum has been observed in the frequency dependence of the dissipation factor. Such behavior is found to be in good qualitative agreement with the model of Goswami and Goswami. The AC conductivity $\sigma \left( \omega \right)$ σ ( ω ) is found to vary as $\omega^{s}$ ω s in the studied frequency range. At frequencies 10–10² Hz, s is less than unity and decreases with increase in temperature indicating a dominant hopping process. At frequency ranges 10²–10⁴ Hz, exponent s lies very close to the unity and is independent of temperature, which shows the quantum mechanical tunneling is dominated conduction mechanism. At higher frequencies 10⁴–10⁵ Hz, s is found to be temperature independent. The temperature dependence of AC conductivity shows a linear increase with the increase in temperature. Moreover, the activation energies of device are determined as a function of frequency.