Selective catalytic reduction of NOx by hydrocarbons on Pt/Al2O3 catalysts at low temperatures without the formation of N2O

The selective reduction of nitrogen oxides by hydrocarbons on a Pt catalyst has been investigated. Some variations are observed between different reductants. However, the most significant result is the observation that no N₂O is observed as a by-product when toluene is used as a reductant.     

Reactivity of steam in exhaust gas catalysis III. Steam and oxygen/steam conversions of propane on a Pd/Al2O3 catalyst

A 1% Pd catalyst (38% dispersion) was prepared by impregnating a γ-alumina with palladium acetylacetonate dissolved in acetone. The behaviour of this catalyst in oxidation and steam reforming (SR) of propane was investigated. Temperature-programmed reactions of C₃H₈ with O₂ or with O₂ + H₂O were carried out with different stoichiometric ratios S(S =[O₂]/5[C₃H₈]). The conversion profiles of C₃H₈ for the reaction carried out in substoichiometry of O₂ (S < 1) showed two discrete domains of conversion: oxidation at temperatures below 350°C and SR at temperatures above 350°C. The presence of steam in the inlet gases is not necessary for SR to occur: there is sufficient water produced in the oxidation to form H₂ and carbon oxides by this reaction. Contrary to what was observed with Pt, an apparent deactivation between 310 and 385°C could be observed with Pd in oxidation. This is due to a reduction of PdO_x into Pd⁰, which is much less active than the oxide in propane oxidation. Steam added to the reactants inhibits oxidation while it prevents the reduction of PdO_x into Pd⁰. Compared to Pt and to Rh, Pd has a higher thermal resistance: no deactivation occurred after treatment up to 700°C and limited deactivation after treatment up to 900°C, provided that the catalyst is maintained in an oxygen-rich atmosphere during the cooling.     

以CGA卡为基础的智能显示系统

本文介绍了以微处理器与ＩＢＭ－ＰＣ上的彩色／图形适配器相结合构成的一种智能显示系统。本系统主要解决数控系统中主ＣＰＵ与６８４５ＣＲＴＣ争夺显示缓存的矛盾。保证了６８４５ＣＲＴＣ对显示缓存操作的时间要求；并且保证了数控系统中主ＣＰＵ对显示缓存操作的随意性。     

逻辑程序的一种并行执行模型

本文基于静态相关性分析和动态调整相结合的方法，提出了一种逻辑程序的执行模型，它不仅开发了“与“并行，同进也开发了一定的“或“并行，从而有效地加速了逻辑程序的执行。     

高速钢W6Mo5Cr4V2的脱磷试验

在３０ｋｇ感应炉上用ＣａＯ－Ｎａ２ＣＯ３－ＣａＦ２－ＦｅｘＯ（ＭｏＯ３）渣、ＭｏＣｌ６粉剂和Ａｌ－Ｃａ合金作脱磷剂对高速钢Ｗ６Ｍｏ５Ｃｒ４Ｖ２进行脱磷试验。结果表明，ＣａＯ－Ｎａ２ＣＯ３－ＣａＦ２－ＦｅｘＯ渣的脱磷效果最好，一般脱磷率可达２６％￣５６％。     

铁钴钒软磁合金损耗谱的分形结构

研究了铁钴钒软磁合金的铁芯损耗，发现铁芯损耗谱具有分形结构。讨论了带材厚度和磁感应强度对分形维数Ｄｆ的影响。     

Optimal solutions for a dynamic bandwidth allocation scheme in high-speed networks

In this paper, we investigate the problem of determining the optimal bandwidth allocation for a Dynamic Bandwidth Allocation Scheme (DBAS). The objective is to minimize the total amount of bandwidth required to satisfy the Quality of Service (QoS) requirements of all traffic streams. It is shown that when the performance functions satisfy a certain number of conditions, there exists a unique optimal bandwidth allocation such that, for each traffic stream, either its QoS is just satisfied or its QoS is over-satisfied and it is allocated zero bandwidth. Such an allocation is said to be efficient. It is also shown that there exists a unique efficient allocation in the entire feasible region. An iterative algorithm is developed to compute the efficient allocation employing its special properties. Numerical examples are presented to demonstrate how the algorithm works. Future extensions of this work are also discussed.Partially supported by NSERC of Canada through grants OGP14020 and STRIN-200.     

Electroluminescent zinc sulphide devices produced by sol-gel processing

Zinc sulphide thin film electroluminescent devices doped with Mn or Tb have been produced on p-type Si substrates using a process in which doped zinc oxide films are deposited by a sol-gel drain coating method from a solution of zinc acetate containing a manganese or terbium dopant. The films are then converted to ZnS by heating them in an atmosphere containing hydrogen sulphide which replaces the oxygyn with sulphur. The composition, crystalline structure and optical properties of films have shown that complete conversion from the oxide to the sulphide takes place. The luminescent characteristics of the devices so produced have been measured as a function of the doping concentrations, film thickness, insulator thickness and driving voltage and frequency. It has been found that yellow or green luminescence can be obtained using Mn or Tb doping respectively.     

A luminosity monitor system for the JETSET experiment at LEAR

A luminosity-monitor system for the JETSET experiment at LEAR is described. Four silicon-strip detectors are used as position sensitive devices to monitor the elastic p-scattering. The design concept, data-acquisition and results of the detector system are presented. On-line monitoring is used to assure the proper operation of the JETSET experiment.     

Erbium-doped silicon and porous silicon for optoelectronics

Silicon forms the backbone of the microelectronics industry, and possibly, of the optoelectronics industry, hitherto dominated by III/V materials. One of the remaining goals is to build an optical source in silicon. Erbium exhibits luminescent 1.54 μm intra-4f transitions in both silicon and porous silicon. This paper reviews the work which has been carried out in this field and discusses some possible additional applications of erbium-doped silicon in optoelectronics, such as a novel on-chip temperature sensor.