Contrast-enhanced magnetisation transfer MRI in metastatic lesions of the brain

Our purpose was to compare prospectively the sensitivity of contrast-enhanced magnetisation transfer (MT) MRI and gradient-echo (GE) T1-weighted images in metastatic disease of the brain. We studied 52 patients with brain metastases, using conventional T1-weighted GE and MT spin-echo (SE) images after the same standard dose of gadolinium. Axial 5-mm reconstructions of GE data were compared with 5-mm MT images in the same plane. Metastases were counted independently by two neuroradiologists. In 12 patients (23%) MT imaging showed more metastases than GE images (P = 0.03). We detected 68 more metastases with the former technique.     

Oscillation of the scattering time in a 2D electron system with oval antidots

Electron scattering by a single barrier is predicted to reveal singularities as the magnetic field is changed, because the number of electron collisions with the barrier dramatically increases as chaotic orbits around the barrier are changed into periodic orbits. To test this experimentally we have measured the magnetoresistance of AlGaAs/GaAs heterostructures with a two-dimensional electron gas and a lateral lattice containing a macroscopic number of oval-shaped antidots fabricated using electron lithography. Reproducible fluctuations in the magnetoresistance are observed at low field, which are due to the oscillations of the number of electron collisions with the antidots. The number of collisions N before the electron escapes from the antidot has been calculated as a function of B in an electric field. The position of the maxima in N(B) obtained from calculations and experiment are in reasonable agreement.     

Sequential discrete multilevel automated system for recording electron-diffraction patterns

This article considers a discrete sequential multilevel automated system for recording electron-diffraction patterns. A comparative analysis is presented, along with experimental results that make it possible to evaluate the effectiveness of the technical decisions on which the device is based. The general design of the system is presented. Translated from Izmeritel'naya Tekhnika No. 5, pp. 16–18, May, 1996.     

Prediction of processing-induced distortion of curved flanged composite laminates

It is well known that angles in composite parts contract as they are cooled down from the curing temperature, this is often referred to as spring-in. It is caused mainly by the significantly different thermal contractions and cure shrinkage's experienced between the fibre direction and the through-thickness direction during the manufacturing process. A number of works have reported on the spring-in of straight angle composite parts. However, little has been done to investigate the distortion of curved flanged composite parts, which will distort differently owing to the introduction of the additional curvature, thus constraint.

In the present work, the distortion of the circularly curved flanged laminates is studied numerically. The finite element method is used to predict the processing-induced distortion of the part with two different approaches. In the first approach, the shear angles of the composite plies are predicted by a draping analysis. The effect of the fibre shearing on the mechanical properties of the laminates is considered in the model used to predict the distortion. The second simplified approach assumes that the in-plane properties of the laminates are isotropic. The results obtained by these two approaches are compared with those obtained experimentally.     

Theory of a novel voltage-sustaining layer for power devices

The theory of a novel voltage-sustaining layer for power devices, called a Composite Buffer layer (CB-layer for short) is proposed. The CB-layer can be implemented in several ways, one particular implementation is used here, which consists of alternating n- and p-type regions, that are parallel to the direction of the applied electric field. In the off-state, the fields induced by the depletion charges of both region types compensate each other to allowing the doping in both n-regions and p-regions to be very high without causing a reduction of the breakdown voltage. In the onstate the heavy doping ensures the voltage drop is very low and that the saturation current density high. A simple relationship between the specific on-resistance and R_on and the sustaining voltage V_B can be shown to be R_on=2.53 × 10⁻⁷bV_B^1.23 ωcm², where the breadth b (in μm) of each region is much smaller than the thickness W. The design method of the CB-layer is discussed in some detail. The simulation results are shown to be in perfect agreement with the theory. The structure has application to a wide variety of different power devices. An RMOST structure has been used to demonstrate the benefits of the technique in the paper, for which excellent performance is demonstrated.     

Clinical study on effect of bushen shengxue paste in treating renal anemia patients

OBJECTIVE: To evaluate the therapeutical mechanism of Bushen Shengxue Paste (BSSXP) on anemia. METHODS: Chronic renal failure induced anemia patients were treated with BSSXP, clinical manifestation, anemia and renal function as indicators were observed in patients. The erythropoietin (EPO) and inhibition of colony-forming unit-erythrocyte (CFU-E) in patients' serum were determined by CFU-E in vitro. RESULTS: The patients' symptoms, renal function and anemia were improved after administration with BSSXP 1-2 course. EPO in serum was slightly increased. The inhibition of CFU-E in patient's serum was significantly decreased. CONCLUSIONS: BSSXP could improve the anemia degree, its mechanism might be through clearing the inhibitor of CFU-E in serum.