Continuous stimulated emission at T=293 K from separate-confinement heterostructure diode lasers with one layer of InAs quantum dots grown on vicinal GaAs(bd001) surfaces misoriented in the [010] direction in the active region

The electroluminescence and stimulated emission of lasers with one layer of InAs quantum dots (QD’s) grown in a single molecular-beam epitaxial process on vicinal GaAs(001) surfaces misoriented in the direction [010] by 2, 4 and 6° are investigated. It is discovered that an increase in the misorientation angle leads to a blue shift and a decrease in the full width at half maximum (FWHM) of the electroluminescence spectrum. This effect is attributed to a decrease in the size of the quantum dots and improvement in their size uniformity. A strong dependence of the threshold current density on the width of the spontaneous luminescence spectrum is discovered. The room-temperature threshold current density of the lasers with one layer of quantum dots and the spontaneous luminescence spectrum having the smallest FWHM (54 meV) equals 210 A/cm². Fiz. Tekh. Poluprovodn. 32, 1482–1486 (December 1998)     

Deformation of a rectangular plate half-embedded in an elastic base

We have investigated the deformation of a rectangular plate half-embedded in an elastic base and subjected to a mechanical load. Using the apparatus of generalized functions, the problem is reduced to a system of singular integral equations which is solved by the boundary element method. We present the results in the form of isolines of the components of the displacement vector.Translated from Problemy Prochnosti, No. 3, pp. 72–77, March, 1996.     

Use of connected arithmetic spirals for control of openings

We demonstrate that it is possible to use connected arthmetic spirals to control the diameters of openings in metallic objects, including bushings. Computational results and experimental research are presented. Translated from Izmeritel'naya Tekhnika, No. 10, pp. 17–19, October, 1996.     

Distance of pneumotransport of granular materials by retarded dense bed

Translated from Khimiya i Tekhnologiya Topliv i Masel, No. 12, pp. 8–10, December, 1993.     

Calculation of an electric field in metal-insulator-metal structures

A method is proposed for calculating an electric field in a thin piezoelectric wafer taking into account the injection of electrons from a metal electrode into an insulator. The static current-voltage characteristic of a metal-insulator-metal structure is given, along with the results of a comparison of calculations and experiment. Translated from Izmeritel'naya Tekhnika, No. 1, pp. 46–48, January, 1996.