Synthesis and characterization of partially fluorinated hydrophobic–hydrophilic multiblock copolymers containing sulfonate groups for proton exchange membrane

A new hydrophobic–hydrophilic multiblock copolymer has been successfully synthesized based on the careful coupling of a fluorine terminated poly(arylene ether ketone) (6FK) hydrophobic oligomer and a phenoxide terminated disulfonated poly(arylene ether sulfone) (BPSH) hydrophilic oligomer. ¹⁹F and ¹H NMR spectra were used to characterize the oligomers’ molecular weights and multiblock copolymer's structure. The comparison of the multiblock copolymer ¹³C NMR spectrum with that of the random copolymer showed that the transetherification side reaction was minimized in this synthesis. The morphologies of membranes were investigated by tapping mode atomic force microscopy (AFM), which showed that the multiblock membrane acidified by the high temperature method has sharp phase separation. Membrane properties like protonic conductivity, water uptake, and self-diffusion coefficient of water as a function of temperature and relative humidity (RH) were characterized for the multiblock copolymer and compared with ketone type random copolymers at similar ion exchange capacity value and Nafion^® controls. The multiblock copolymers are promising candidates for proton exchange membranes especially for applications at high temperatures and low relative humidity.     

Auto-configuration of Physical Cell ID in LTE femtocellular systems using Self Organizing Networks

The commercial success of cellular networks, combined with advances in digital electronics, signal processing, and telecommunications research have lead to the design of next generation 4G-based long term evolution (LTE) wireless systems. The key essence of these emerging, LTE cellular systems lie in deployment of multiple femtocells for improved coverage and higher data rates. However, the arbitrary deployment of a wide number of femtocells makes the configuration, management and planning of LTE systems quite complex and challenging. In order to support dynamic and efficient network configuration, every cell needs to be assigned a particular Physical Cell ID (PCID). In this paper we show that the dynamic, optimal PCID allocation problem in LTE systems is NP-complete. Subsequently we provide a near-optimal solution using Self-Organizing Networks which models the problem using new merge operations and explores the search space using a suitable randomized algorithmic approach. We also discuss two feasible options for dynamic auto-configuration of the system and analyze the algorithm to prove its convergence. Simulation results point out that our proposed near-optimal solution dynamically achieves ～85?90 % of global optimal auto-configuration in computationally feasible time.     

Organic bulk heterojunction enabled with nanocapsules of hydrate vanadium pentaoxide layer for high responsivity self-powered photodetector

This article demonstrates the fabrication of organic-based devices using a low-cost solution-processable technique. A blended heterojunction of chlorine substituted 2D-conjugated polymer PBDB-T-2Cl, and PC₇₁BM supported nanocapsules hydrate vanadium penta oxides (HVO) as hole transport layer (HTL) based photodetector fabricated on an ITO coated glass substrate under ambient condition. The device forms an excellent organic junction diode with a good rectification ratio of ~200. The device has also shown excellent photodetection properties under photoconductive mode (at reverse bias) and zero bias for green light wavelength. A very high responsivity of ~6500 mA/W and high external quantum efficiency (EQE) of 1400% have been reported in the article. The proposed organic photodetector exhibits an excellent response and recovery time of ~30 and ~40 ms, respectively.     

Haploinsufficiency of a Circadian Clock Gene Bmal1 (Arntl or Mop3) Causes Brain-Wide mTOR Hyperactivation and Autism-like Behavioral Phenotypes in Mice

Approximately 50–80% of children with autism spectrum disorders (ASDs) exhibit sleep problems, but the contribution of circadian clock dysfunction to the development of ASDs remains largely unknown. The essential clock gene Bmal1 (Arntl or Mop3) has been associated with human sociability, and its missense mutation is found in ASD. Our recent study found that Bmal1-null mice exhibit a variety of autism-like phenotypes. Here, we further investigated whether an incomplete loss of Bmal1 function could cause significant autism-like behavioral changes in mice. Our results demonstrated that heterozygous Bmal1 deletion (Bmal1^+/−) reduced the Bmal1 protein levels by ~50–75%. Reduced Bmal1 expression led to decreased levels of clock proteins, including Per1, Per2, Cry 1, and Clock but increased mTOR activities in the brain. Accordingly, Bmal1^+/− mice exhibited aberrant ultrasonic vocalizations during maternal separation, deficits in sociability and social novelty, excessive repetitive behaviors, impairments in motor coordination, as well as increased anxiety-like behavior. The novel object recognition memory remained intact. Together, these results demonstrate that haploinsufficiency of Bmal1 can cause autism-like behavioral changes in mice, akin to those identified in Bmal1-null mice. This study provides further experimental evidence supporting a potential role for disrupted clock gene expression in the development of ASD.     

Long wavelength infrared, molecular beam epitaxy, HgCdTe-on-Si diode performance

In the past several years, we have made significant progress in the growth of CdTe buffer layers on Si wafers using molecular beam epitaxy (MBE) as well as the growth of HgCdTe onto this substrate as an alternative to the growth of HgCdTe on bulk CdZnTe wafers. These developments have focused primarily on mid-wavelength infrared (MWIR) HgCdTe and have led to successful demonstrations of high-performance 1024×1024 focal plane arrays (FPAs) using Rockwell Scientific’s double-layer planar heterostructure (DLPH) architecture. We are currently attempting to extend the HgCdTe-on-Si technology to the long wavelength infrared (LWIR) and very long wavelength infrared (VLWIR) regimes. This is made difficult because the large lattice-parameter mismatch between Si and CdTe/HgCdTe results in a high density of threading dislocations (typically, >5E6 cm⁻²), and these dislocations act as conductive pathways for tunneling currents that reduce the R_oA and increase the dark current of the diodes. To assess the current state of the LWIR art, we fabricated a set of test diodes from LWIR HgCdTe grown on Si. Silicon wafers with either CdTe or CdSeTe buffer layers were used. Test results at both 78 K and 40 K are presented and discussed in terms of threading dislocation density. Diode characteristics are compared with LWIR HgCdTe grown on bulk CdZnTe.     

Synthesis and magnetic properties of NdMnAl and some RMnIn (R=rare earth)

The equiatomic ternary compounds NdMnAl and RMnIn (R=Nd, Gd, Dy, Er, and Y) have been synthesized for the first time. In this paper, we report their crystal structure and the magnetic behavior of three of them (i.e., NdMnAl, GdMnIn, and DyMnIn). While NdMnAl and NdMnIn have the cubic, Laves-phase, C-15-type structure, the latter compounds form in the closely related hexagonal, Laves-phase, C-14-type structure. The Mn ions carry a substantial magnetic moment in the three compounds, but magnetization does not exhibit signatures of long-range magnetic ordering. Broad peaks in the thermal variation of magnetization, accompanied with thermomagnetic irreversibility below the peak region and hysteresis loops at low temperatures with large coercivity indicate spin glass-type freezing of the magnetic moments. The heat capacity data, measured in the range of 1.8 to 100 K, do not exhibit peaks associated with long-range magnetic order and, thus, corroborate the results inferred from magnetization data. Resistivities of these compounds are large and show negative temperature coefficients. These observations can be reconciled to a highly disordered state brought about by the random substitution of In or Al for Mn in these compounds.     

Static dielectric constant of heavily doped semiconductors

One of the major effects of heavy doping in semiconductors is that the dielectric constant κ changes with impurity density and thus with position. The change is significant for impurity densities N greater than 10¹⁷ cm^?3. The low temperature classical relation of Castellan and Seitz is modified by including the contribution to the local field at the atomic site by the polarization of the host atoms due to an electric field. This correction makes an appreciable difference in κ(N). A new model for the polarizability of the impurity atoms is also developed. It is found that there is good agreement between the values of the dielectric constant of Si doped with As, P and Sb predicted by this theory and those found experimentally by Bethin et al. The critical impurity concentration for the metal-nonmetal transition found from this theory is however higher than that given by Castner et al. Reasons for this discrepancy are given.     

Monolithically integrated HgCdTe focal plane arrays

The cost and performance of hybrid HgCdTe infrared (IR) focal plane arrays are constrained by the necessity of fabricating the detector arrays on a CdZnTe substrate. These substrates are expensive, fragile, available only in small rectangular formats, and are not a good thermal expansion match to the silicon readout integrated circuit. We discuss in this paper an IR sensor technology based on monolithically integrated IR focal plane arrays that could replace the conventional hybrid focal plane array technology. We have investigated the critical issues related to the growth of HgCdTe on Si read-out integrated circuits and the fabrication of monolithic focal plane arrays: (1) the design of Si read-out integrated circuits and focal plane array layouts; (2) the low-temperature cleaning of Si(001) wafers; (3) the growth of CdTe and HgCdTe layers on read-out integrated circuits; (4) diode creation, delineation, electrical, and interconnection; and (4) demonstration of high yield photovoltaic operation without limitation from earlier preprocessing such as substrate cleaning, molecular beam epitaxy (MBE) growth, and device fabrication. Crystallographic, optical, and electrical properties of the grown layers will be presented. Electrical properties for diodes fabricated on misoriented Si and readout integrated circuit (ROIC) substrates will be discussed. The fabrication of arrays with demonstrated I–V properties show that monolithic integration of HgCdTe-based IR focal plane arrays on Si read-out integrated circuits is feasible and could be implemented in the third generation of IR systems.