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81.
Design of 5.9 ghz dsrc-based vehicular safety communication   总被引:3,自引:0,他引:3  
The automotive industry is moving aggressively in the direction of advanced active safety. Dedicated short-range communication (DSRC) is a key enabling technology for the next generation of communication-based safety applications. One aspect of vehicular safety communication is the routine broadcast of messages among all equipped vehicles. Therefore, channel congestion control and broadcast performance improvement are of particular concern and need to be addressed in the overall protocol design. Furthermore, the explicit multichannel nature of DSRC necessitates a concurrent multichannel operational scheme for safety and non-safety applications. This article provides an overview of DSRC based vehicular safety communications and proposes a coherent set of protocols to address these requirements  相似文献   
82.
An intrinsic hydrogenated amorphous silicon (a-Si:H(i)) film and a doped silicon film are usually combined in the heterojunction contacts of silicon heterojunction (SHJ) solar cells. In this work, a post-doping process called catalytic doping (Cat-doping) on a-Si:H(i) is performed on the electron selective side of SHJ solar cells, which enables a device architecture that eliminates the additional deposition of the doped silicon layer. Thus, a single phosphorus Cat-doping layer combines the functions of two other layers by enabling excellent interface passivation and high carrier selectivity. The overall thinner layer on the window side results in higher spectral response at short wavelengths, leading to an improved short-circuit current density of 40.31 mA cm−2 and an efficiency of 23.65% (certified). The cell efficiency is currently limited by sputter damage from the subsequent transparent conductive oxide fabrication and low carrier activation in the a-Si:H(i) with Cat-doping. Numerical device simulations show that the a-Si:H(i) with Cat-doping can provide sufficient field effect passivation even at lower active carrier concentrations compared to the as-deposited doped layer, due to the lower defect density.  相似文献   
83.
The millimeter-wave spectrum above 70 GHz provides a cost-effective solution to increase the wireless communications data rates by increasing the carrier wave frequencies. We report on the development of two key components of a wireless transmission system, a high-speed photodiode (HS-PD) and a Schottky Barrier Diode (SBD). Both components operate uncooled, a key issue in the development of compact modules. On the transmitter side, an improved design of the HS-PD allows it to deliver an output RF power exceeding 0 dBm (1 mW). On the receiver side, we present the design process and achieved results on the development of a compact direct envelope detection receiver based on a quasi-optical SDB module. Different resonant (meander dipole) and broadband (Log-Spiral and Log-Periodic) planar antenna solutions are designed, matching the antenna and Schottky diode impedances at high frequency. Impedance matching at baseband is also provided by means of an impedance transition to a 50 Ohm output. From this comparison, we demonstrate the excellent performance of the broadband antennas over the entire E-band by setting up a short-range wireless link transmitting a 1 Gbps data signal.  相似文献   
84.
This work reports the combinatorial synthesis and screening of phosphorescent iridium complexes as solution processable emitters for OLEDs. The approach taken here allows for the rapid synthesis, isolation, spectroscopic characterization and identification of the libraries based on chromatographic methods. Subsequent analysis of the irradiation induced degradation provides insight on the stability of the complexes under continuous excitation. The method is versatile and can easily be applied to other metal complexes or organic dyes for various applications, e.g., in electroluminescence, photovoltaics and sensing.  相似文献   
85.
Developing selective and coherent polymorphic crystals at the nanoscale offers a novel strategy for designing integrated architectures for photonic and optoelectronic applications such as metasurfaces, optical gratings, photodetectors, and image sensors. Here, a direct optical writing approach is demonstrated to deterministically create polymorphic 2D materials by locally inducing metallic 1T′-MoTe2 on the semiconducting 2H-MoTe2 host layer. In the polymorphic-engineered MoTe2, 2H- and 1T′- crystalline phases exhibit strong optical contrast from near-infrared to telecom-band ranges (1–1.5 µm), due to the change in the band structure and increase in surface roughness. Sevenfold enhancement of third harmonic generation intensity is realized with conversion efficiency (susceptibility) of ≈1.7 × 10−7 (1.1 × 10−19 m2 V−2) and ≈1.7 × 10−8 (0.3 × 10−19 m2 V−2) for 1T′ and 2H-MoTe2, respectively at telecom-band ultrafast pump laser. Lastly, based on polymorphic engineering on MoTe2, a Schottky photodiode with a high photoresponsivity of 90 AW−1 is demonstrated. This study proposes facile polymorphic engineered structures that will greatly benefit realizing integrated photonics and optoelectronic circuits.  相似文献   
86.
Motivated by the possibility of modifying energy levels of a molecule without substantially changing its band gap, the impact of gradual fluorination on the optical and structural properties of zinc phthalocyanine (FnZnPc) thin films and the electronic characteristics of FnZnPc/C60 (n = 0, 4, 8, 16) bilayer cells is investigated. UV–vis measurements reveal similar Q‐ and B‐band absorption of FnZnPc thin films with n = 0, 4, 8, whereas for F16ZnPc a different absorption pattern is detected. A correlation between structure and electronic transport is deduced. For F4ZnPc/C60 cells, the enhanced long range order supports fill factors of 55% and an increase of the short circuit current density by 18%, compared to ZnPc/C60. As a parameter being sensitive to the organic/organic interface energetics, the open circuit voltage is analyzed. An enhancement of this quantity by 27% and 50% is detected for F4ZnPc‐ and F8ZnPc‐based devices, respectively, and is attributed to an increase of the quasi‐Fermi level splitting at the donor/acceptor interface. In contrast, for F16ZnPc/C60 a decrease of the open circuit voltage is observed. Complementary photoelectron spectroscopy, external quantum efficiency, and photoluminescence measurements reveal a different working principle, which is ascribed to the particular energy level alignment at the interface of the photoactive materials.  相似文献   
87.
Herein, a novel polymer‐templated strategy is described to obtain 2D nickel‐based MOF nanosheets using Ni(OH)2, squaric acid, and polyvinylpyrrolidone (PVP), where PVP has a dual role as a structure‐directing agent, as well as preventing agglomeration of the MOF nanosheets. Furthermore, a scalable method is developed to transform the 2D MOF sheets to Ni7S6/graphene nanosheet (GNS) heterobilayers by in situ sulfidation using thiourea as a sulfur source. The Ni7S6/GNS composite shows an excellent reversible capacity of 1010 mAh g?1 at 0.12 A g?1 with a Coulombic efficiency of 98% capacity retention. The electrochemical performance of the Ni7S6/GNS composite is superior not only to nickel sulfide/graphene‐based composites but also to other metal disulfide–based composite electrodes. Moreover, the Ni7S6/GNS anode exhibits excellent cycle stability (≈95% capacity retention after 2000 cycles). This outstanding electrochemical performance can be attributed to the synergistic effects of Ni7S6 and GNS, where GNS serves as a conducting matrix to support Ni7S6 nanosheets while Ni7S6 prevents restacking of GNS. This work opens up new opportunities in the design of novel functional heterostructures by hybridizing 2D MOF nanosheets with other 2D nanomaterials for electrochemical energy storage/conversion applications.  相似文献   
88.
In this paper, we present the selective structuring of all three patterns (P1, P2 and P3) of a monolithic interconnection of CIS (Cu(In,Ga)(S,Se)2) thin film solar cells by picosecond laser pulses at a wavelength of 1064 nm. We show results for single pulse ablation threshold values and line scribing of molybdenum films on glass (P1), CIS on molybdenum (P2) and zinc oxide on CIS (P3). The purposes of these processes are the p‐type isolation (P1), cell interconnect (P2) and n‐type isolation (P3), which are required for complete cell architecture. The half micron thick molybdenum back electrode can be structured with a process speed of more than 15 m/s at about 15 W average power without detectable residues and damage by direct induced laser ablation from the back side (P1). The CIS layer can be structured selectively down to the molybdenum at process speeds up to 1 m/s at about 15 W average power, due to the precision of direct laser ablation in the ultrashort pulse regime (P2). The ZnO front electrode layer is separated by clean trenches with straight side walls at process speeds of up to 15 m/s at about 10 W average power, as a result of indirect induced laser ablation (P3). A validation of functionality of all processes is demonstrated on CIS solar cell modules (30 × 30 cm2). By replacing one state‐of‐the‐art process by a picosecond laser process at a time, solar efficiencies could be increased for P1 and P2 and stayed on a similar level for P3. After an optimization of the patterning processes in the R&D pilot line of AVANCIS, we achieved a new record efficiency for an all‐laser‐patterned CIS solar module: 14.7% as best value for the aperture area efficiency of a 30 × 30 cm2 sized CIS module was reached. Copyright © 2014 John Wiley & Sons, Ltd.  相似文献   
89.
Monolithically integrated Cu(In,Ga)Se2 mini‐modules were fabricated in order to reduce the width of patterning related dead area. The Cu(In,Ga)Se2 layers were prepared on soda‐lime glasses using the multistage process at low substrate temperature below 500 °C. A picosecond laser with a wavelength of 532 nm was used for all of the structuring processes (P1, P2, and P3) for the monolithic integration. A “lift‐off” type structuring was applied for P1 and P3, and an “ablation” type was for P2. The laser structuring was optimized to be minimizing the dead area width, and the width of about 70 µm was successfully achieved. A mini‐module, in which the optimized structuring processes were applied for the integration, demonstrated a certified efficiency of 16.6%. Copyright © 2015 John Wiley & Sons, Ltd.  相似文献   
90.
A hybrid approach for the realization of In‐free transparent conductive layers based on a composite of a mesh of silver nanowires (NWs) and a conductive metal‐oxide is demonstrated. As metal‐oxide room‐temperature‐processed sol–gel SnOx or Al:ZnO prepared by low‐temperature (100 °C) atomic layer deposition is used, respectively. In this concept, the metal‐oxide is intended to fuse the wires together and also to “glue” them to the substrate. As a result, a low sheet resistance down to 5.2 Ω sq‐1 is achieved with a concomitant average transmission of 87%. The adhesion of the NWs to the substrate is significantly improved and the resulting composites withstand adhesion tests without loss in conductivity. Owing to the low processing temperatures, this concept allows highly robust, highly conductive, and transparent coatings even on top of temperature sensitive objects, for example, polymer foils, organic devices. These Indium‐ and PEDOT:PSS‐free hybrid layers are successfully implemented as transparent top‐electrodes in efficient all‐solution‐processed semitransparent organic solar cells. It is obvious that this approach is not limited to organic solar cells but will generally be applicable in devices which require transparent electrodes.  相似文献   
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