Accurate estimation of environment parameters from ultrasonic data

This paper describes a robust and accurate ultrasonic sensing system for a mobile robot. The system continuously updates a local map of the environment in which obstacles are represented by straight lines or points in a robot centered coordinate frame. The presented algorithms use a Kalman filter for the reduction of the noise in the ultrasonic data and use a systematical error correction (‘bundle correction’) to reduce the uncertainty in obstacle direction. Experiments are carried out in simulation and with a real mobile robot system. Results show that the accuracy with which line parameters can be estimated is in the order of 1 degree for the orientation and about 2 cm for the position. The effect of the bundle correction is significant and maximal when the robot approaches walls under a small angle.     

各种状态的液体通过核孔膜的规律

介绍了液体通过核孔膜规律方面取得的新认识，包括：（１）纯净液体通过核孔膜的规律；（２）核孔膜测定液体粘滞系数的各种方法；（３）各种物质溶液浓度的核孔膜测定；（４）液相混合物快速分离和化学分离；（５）流体中固体微粒对核孔膜的堵塞及其公式；（６）用核孔膜滤除液中各各斩规律。     

The effects of plasma etching induced gate oxide degradation onMOSFET's 1/f noise

The effects of the plasma etching process induced gate oxide damages on device's low frequency noise behavior are investigated on MOSFET's fabricated with different field plate perimeter to gate area ratio antennas. Abnormal 1/f noise spectrum with a shoulder centered in the frequency range of 100 and to 1 kHz was frequently observed in small geometry devices, and it is attributable to a nonuniform distribution of oxide traps induced by plasma etching process     

层状催化剂颗粒的优化设计——双组分等温平行反应体系

针对双组分等温平行反应体系,分析讨论了以提高催化剂活性和选择性为目标时催化剂活性组分的最优分布形式(为δ-函数分布),并给出了确定这种反应体系的催化剂的最佳活性层位置的计算方法。结果表明:以提高选择性为目标的最佳活性层位置比以提高活性为目标的要更靠近催化剂核心,实用的最优位置应介于二者之间。最后,本文还研究了反应动力学级数、本性选择性以及内扩散模数(Thiele 模数)等因素对最佳活性层位置的影响。     

The prospects of non-volatile phase-change RAM

Phase-change read-and-write memory (PRAM) is a promising memory that can solve the problems of conventional memory—scalability, read/write speed, and reliability. We will review the opportunities and technical challenges of PRAM. The most important challenge of PRAM is the reduction of the writing current. Various approaches to reduce the writing current will be reviewed and the prospects of PRAM are discussed.