变频电子阻垢技术的工业应用

中国大唐发电有限责任公司徐塘分公司利用变频电磁阻垢技术在4号发电机组循环冷却水系统进行了成功应用.从理论上比较了物理法与化学法水处理技术的差异.工业应用结果表明,变频电磁技术不仅阻垢效果明显,而且具有安装维护简便,适应性广,运行费用低,对水体无污染等特点.可以替代化学阻垢法.     

Effects of genotype and treatment on the antioxidant activity of sweet potato in Taiwan

Six genotypes of sweet potato commercially available in Taiwan, including TNG57, TNG66, TNG68, TYY1, RP and WP, were used as samples in this study of the effects of steaming and kneading with pre-steaming treatments on the antioxidant components and antioxidant properties of methanolic extracts. Steam treatment increased the total phenols contents of all genotypes (2–13 times), flavonoids content of RP (1.3 times) and anthocyanins contents of RP and WP (5–6 times). Steam treatment also increased the reducing power and scavenging DPPH radical effect of sweet potato flours. For the methanolic extracts of steamed and kneaded flours, reducing powers were 0.02–1.70 at 5.0 mg ml⁻¹ and the scavenging effects on DPPH radicals were 19–92% at 2.5 mg ml⁻¹. Both showed the order of RP > WP > TYY1 and TNG66 > TNG57 and TNG68. However, the chelating effect of the six genotypes at 1.0 mg ml⁻¹ ranged from 50% to 73%. Contents of total phenols, flavonoids, and anthocyanins of sweet potato flours were significantly positively correlated with the reducing power and scavenging DPPH radical effects. After steaming and kneading treatments, RP showed the highest increase in the contents of total phenols, flavonoids and anthocyanins among the six genotypes studied.     

交叉试验

发生了质量事故,是设备、操作等硬件的缘故,抑或药液的缘故?通过交叉试验的故事,把真相找了出来。     

A novel compact ring dual-mode filter with adjustable second-passband for dual-band applications

In this letter, a novel compact ring dual-mode with adjustable second-passband for dual-band applications are presented. A ring resonator with two different geometric dimensions are derived and designed to have identical fundamental and the first higher-order resonant frequencies, and to establish appropriate couplings in the structure. Moreover, the proposed filter has smaller size as compared with the basic topology of stopband filters and stepped-impedance-resonator (SIR) filters. The measured filter performance is in good agreement with the simulated response.     

Field Static Load Test on Kao-Ping-Hsi Cable-Stayed Bridge

Field load testing is an effective method for understanding the behavior and fundamental characteristics of a cable-stayed bridge. This paper presents the results of field static load tests on the Kao-Ping-Hsi cable-stayed bridge, the longest cable-stayed bridge in Taiwan, before it was open to traffic. A total of 40 loading cases, including the unit and distributed bending and torsion loading effects, were conducted to investigate the bridge behavior. The atmospheric temperature effect on the variations of the main girder deflections was also monitored. The results of static load testing include the main girder deflections, the flexural strains of the prestressed concrete girder, and the variations of the cable forces. A three-dimensional finite-element model was developed. The results show that the bridge under the planned load test conditions has linear superposition characteristics and the analytical model shows a very good agreement with the bridge responses. Further discussion of deflection and cable forces of the design specifications for a cable-stayed bridge is also presented.     

Characteristics of low-leakage deep-trench diode for ESD protection design in 0.18-/spl mu/m SiGe BiCMOS process

This paper proposes a novel low-leakage BiCMOS deep-trench (DT) diode in a 0.18-/spl mu/m silicon germanium (SiGe) BiCMOS process. By means of the DT and an n/sup +/ buried layer in the SiGe BiCMOS process, a parasitic vertical p-n-p bipolar transistor with an open-base configuration is formed in the BiCMOS DT diode. Based on the two-dimensional (2-D) simulation and measured results, the BiCMOS DT diode indeed has the lowest substrate leakage current as compared to the conventional p/sup +//n-well diode even at high temperature conditions, which mainly results from the existence of the parasitic open-base bipolar transistor. Considering the applications of the diode string in electrostatic discharge (ESD) protection circuit designs, the BiCMOS DT diode string also provides a good ESD performance. Owing to the characteristics of the low leakage current and high ESD robustness, it is very convenient for circuit designers to use the BiCMOS DT diode string in their IC designs.     

Effect of oxygenation on electrocatalysis of La0.6Ca0.4CoO3−x in bifunctional air electrode

A vacuum-annealed La_0.6Ca_0.4CoO_3−x was consecutively oxygenated in air at temperatures decreasing from 800 to 100 °C, and its electrocatalytic activities for oxygen reduction and evolution were then measured as a function of the oxygenation temperature. The valence of Co cation, changing between +2 and +3, was found susceptible to annealing either in vacuum or air. The catalytic activities initially decrease monotonically as the oxygenation temperature was decreased from 800 to 300 °C, as a result of increasing oxygen content, and then rise abruptly with the oxygen reduction activity reaching a maximum at 200 °C and the oxidation activity at 150 °C. X-ray photoelectron spectroscopy analysis indicated that the enhancements by the low-temperature oxygenation involved increased OH coverage and less charged cations at surface. The results clearly reveal the importance of the post-calcination annealing process for optimizing the performance of La_0.6Ca_0.4CoO_3−x in air electrode applications.     

一种微透镜阵列的研制

介绍一种利用表面张力的作用、以光纤作材料、用分离的自聚焦透镜制作微透镜阵型的方法，这种方法具有制作工艺简单、无须昂贵设备等优点，用此方法实际制作了具有良好连续面型的微透镜阵列，并对制作的微透镜阵列进行了测试，效果较好。     

硫化氢吸收液的电化学分解条件研究

理想的脱硫工艺应满足体积小、费用低、净化度高、无二次污染等要求。在碱性溶液吸收微量硫化氢时同步进行电解，可有效减小设备体积，并将硫化氢转变为氢气和硫磺，不产生恶性气味。为此，实验研究了温度、浓度、电流密度、pH值等因素对电解阳极过程的影响，确定了适宜的电解条件，并在该条件下进行了吸收实验。结果表明，在最佳电解条件下，硫化钠溶液能充分吸收天然气中经变压吸附提浓的硫化氢（800 mg/m³），吸收率大于99.9％。     

Improvement of AlGaInP light emitting diode by sulfide passivation

The brightness of AlGaInP light emitting diodes (LEDs) has been raised by a factor of 1.12 at 20 mA by sulfide passivation. Meanwhile, the sulfide also can decrease leakage current of AlGaInP LEDs at -2 V to nearly one thousandth of that in the as-fabricated device. The possible causes for the brightness increase of AlGaInP LEDs after sulfide treatment including surface roughness, reduction of Fresnel loss, and effective injection of carriers were demonstrated.