首页 | 本学科首页   官方微博 | 高级检索  
文章检索
  按 检索   检索词:      
出版年份:   被引次数:   他引次数: 提示:输入*表示无穷大
  收费全文   207115篇
  免费   16738篇
  国内免费   7879篇
电工技术   11597篇
技术理论   14篇
综合类   11264篇
化学工业   35839篇
金属工艺   10641篇
机械仪表   12528篇
建筑科学   16502篇
矿业工程   5014篇
能源动力   5927篇
轻工业   12793篇
水利工程   3233篇
石油天然气   11121篇
武器工业   1353篇
无线电   26073篇
一般工业技术   26845篇
冶金工业   11009篇
原子能技术   2134篇
自动化技术   27845篇
  2024年   1327篇
  2023年   3553篇
  2022年   5986篇
  2021年   8053篇
  2020年   6024篇
  2019年   5153篇
  2018年   5626篇
  2017年   6398篇
  2016年   5921篇
  2015年   7422篇
  2014年   9678篇
  2013年   12372篇
  2012年   12273篇
  2011年   13923篇
  2010年   11663篇
  2009年   11501篇
  2008年   10905篇
  2007年   10505篇
  2006年   10876篇
  2005年   9643篇
  2004年   6572篇
  2003年   5784篇
  2002年   5263篇
  2001年   4730篇
  2000年   4872篇
  1999年   5645篇
  1998年   5289篇
  1997年   4362篇
  1996年   3961篇
  1995年   3314篇
  1994年   2777篇
  1993年   2189篇
  1992年   1709篇
  1991年   1278篇
  1990年   1022篇
  1989年   877篇
  1988年   683篇
  1987年   496篇
  1986年   394篇
  1985年   334篇
  1984年   212篇
  1983年   198篇
  1982年   163篇
  1981年   145篇
  1980年   131篇
  1979年   97篇
  1978年   63篇
  1977年   63篇
  1976年   77篇
  1975年   38篇
排序方式: 共有10000条查询结果,搜索用时 0 毫秒
31.
An analytical model for the grain-barrier height of the intrinsic poly-Si thin-film transistors (TFTs) is developed, in which the grain-barrier height for the applied gate voltage smaller than the threshold voltage is obtained by solving the charge neutrality equation and the grain-barrier height for the applied gate voltage larger than the threshold voltage is obtained by using the quasi-two-dimensional (2-D) method. Good agreements between experimental and simulation results are obtained for a wide gate voltage range  相似文献   
32.
A technique for SiO2 formation by liquid-phase deposition (LPD) at nearly room temperature for low-temperature processed (LTP) polysilicon thin-film transistor (poly-Si TFT) was developed. LPD SiO2 film with a lower P-etch rate shows a dense structure. LPD SiO2 also exhibits good electrical characteristics. LTP poly-Si thin-film transistors (TFTs) with LPD SiO 2 as the gate insulator have been fabricated and investigated. Their characteristics indicate performance adequate for their use as pixel transistors in liquid crystal displays (LCDs)  相似文献   
33.
Z. Jiang  Q. Chen  A. Moser 《Indoor air》1992,2(3):168-179
In order to cumpare the peformance of different supply diffuers of ventilation air, the airflow passern, temperature stratifiation and contaminant dispersion in a furnitured office ventilated by three kinds of air diffuer were numerically investigated. The air diffuers studied in this paper are a quarter-cylinder displacement diffuer on the floor and mixing diffuers (linear and vortex diffuers) on the ceiling. The heat sources in the of-fice are considered to be 50% convective and 50% radiative. The k-? two-equatwn model of turbulence is employed to predict the turbulent diffusion. The results show that the displacement diffuser provides a rather uniform flow field with low velocify in most areas, and the vertical temperature difference from floor to ceiling is as high as 6 K. With the linear diffuser, the air velociry is high, and the temperature is uniform both horizontally and vertically. The air velocity generated by the vortex diffuser is moderate. The distributions of the temperature and the contaminant are rather uniform.  相似文献   
34.
The augmented drift-diffusion current equation, which includes velocity overshoot effects through the space derivatives of the electric field, cannot be directly extended beyond one dimension. A new formalism is developed which considers the carrier heating and the distribution relaxation effects to obtain a multidimensional augmented drift diffusion current equation. The equivalent mobility containing the velocity overshoot correction is derived from the perturbation analysis on the carrier temperature using the energy balance equation. The issues related to the numerical implementation of this generalized model and the validity of the assumptions are also discussed  相似文献   
35.
36.
DC resistivity, dielectric constant, dielectric loss and positron annihilation spectra of (Ba1−x Ho x )TiO3 ceramics have been measured as a function of holmium concentration x. It has been found that the DC resistivity of (Ba1−x Ho x )TiO3 is strongly dependent on the Ho content: it decreases three orders of magnitude and reaches a minimum at x = 0.4%. Doping with 0.6% holmium increases the permittivity of BaTiO3 by approximately three times (from ∼1,300 to ∼4,000), with only a slight increase in the corresponding dielectric loss. The local electron density and defect concentration estimated using positron annihilation technique conforms well to the features found in the dielectric and resistivity measurements. The results have been discussed in terms of a mixed compensation model.  相似文献   
37.
In this paper, we address agent coordination from a dynamic systems perspective and propose a dynamic coordination model, which is inspired by biological metabolic systems. A new coordination mechanism through dynamic local adjustment (CDLA) is presented, and coordination is achieved when every agent utilizes explicitly the global system dynamics and performs iteratively a dynamic local adjustment procedure. The CDLA mechanism is investigated in an example multiagent shop floor system. The results show that the example manufacturing process is well-coordinated and the coordination approach is practically applicable and effective  相似文献   
38.
Field tests of the transmission performance of the ATSC DTV system have been conducted in Taiwan. The test results as well as comparisons against the NTSC system performance are reported and analyzed. From the measured results the reception characteristics of the DTV can be deduced and can provide guidelines for television stations to design the transmission system, schedule equipment deployment, plan service coverage areas, and improve the reception quality of the digital signal  相似文献   
39.
40.
以TD—SCDMA既有进展及面临的挑战与NGBWM的发展走向为基础,重点论述自主创新导向下的TD—SCDMA与NGBWM务实发展战略思考。  相似文献   
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号