Development of an end-point detector for parylene deposition process

Parylene is an emerging material for MEMS. It is an organic material that is grown by using the chemical vapor deposition method at room temperature. The deposition thickness is commonly controlled by the amount of solid-phase dimer loaded in a sublimation chamber. In a conventional deposition machine, the end point of the process is designated by the moment the dimer is exhausted. However, this end-of-process criterion does not offer precise, repeatable control of film thickness. We present the results of the development of an in situ end-point detector for a Parylene chemical vapor deposition process. The detector is based on the thermal transfer principle and can be implemented on commercial parylene deposition systems with minimal system modification. Such a sensor enables a user to stop the deposition when a targeted thickness is reached. The end point detector is very simple to implement on existing parylene deposition systems. A series of such sensors with different target deposition thickness would allow extraction of the actual deposition rate within a deposition run.     

Al2O3对唐钢高炉炉渣性能的影响

针对唐钢近2年提高进口矿配比后，Al2O3含量升高对炉渣流动性带来的不利影响，对唐钢高炉的炉渣性能进行了试验研究。并结合国内同行业的生产实践经验，从理论上分析了炉渣中Al2O3及MgO的适宜含量范围，着重论述了唐钢所处冀东矿区条件下降低Al2O3的主要途径及适应高Al2O3炉渣的具体措施。     

Research on the Distant Hybrids of Wheat Obtained via Low-Energy Ion-Beam Implantation

Abstract The whole DNA of soybean was implanted into four varieties of wheat of Zhongyu5, Huaiyin 9628, Wenyou 1, Jimai 5 respectively via ion-beam mediation. There were 5 plantsobtained whose protein content was higher than 18.5%, the highest one was 21.44%. There were 3plants obtained whose protein content was lower than 11.5%, the lowest one was 10.96%. We cansee that the whole DNA of soybean transformed into wheat via ion beam implantation can inducethe increase in wheat protein content dramatically. The result also shows that the transformationefficiency of different gene types of wheat receptor varies greatly that the implanting time has acertain effect on the efficiency of transformation.     

Pioneering e-supply chain integration in semiconductor industry: a case study

Taiwan Semiconductor Manufacturing Company (TSMC) is the largest semiconductor foundry in the world. Advanced Semiconductor Engineering Inc. (ASE) is the world’s leader in semiconductor assembly and testing. From 1998 to 2004, the two companies completed electronic integration of 11 key business processes through the Internet. The result is a seamless interface between TSMC, ASE and their joint customers. They can now obtain accurate, timely information on their product status and respond appropriately when needed. While the direct economic benefits are estimated to be around US$ 10 million through productivity increase over a total investment of about US$ 2 million, the indirect benefits of this initiative could be on the order of US $100 million if the joint customers’ benefits are considered. In collaboration with the RosettaNet organization, TSMC and ASE leveraged their pioneering experiences to define three data exchange standards which can then be widely adopted in the semiconductor industry. This case study is a demonstration of how two leading companies in their respective fields can join forces to make a difference in creating value for the entire semiconductor industry, which in turn benefits society at large. With the momentum continuing to build and the sphere of influence continuing to expand, it is anticipated that TSMC, ASE and the entire sector will upgrade their competitiveness in terms of cost, quality, responsiveness and customer orientation.     

A structured procedure for analysis and design of order pick systems

We present a structured procedure for order pick system (OPS) analysis and design that has been established on literature review and interviews with and presentations to OPS experts. In particular, we attempt to include the thinking processes that occur between OPS designers and owners. The design procedure and related issues are discussed in the order of input, selection, and evaluation stages.     

Precipitation behavior of σ phase in fusion zone of dissimilar stainless steel welds during multi-pass GTAW process

The purpose of this study is to investigate the precipitation characteristics of σ phase in the fusion zone of stainless steel welds at various welding passes during a tungsten are welding (GTAW) process. The morphology, quantity, and chemical composition of the δ-ferrite and σ phase were analyzed using optical microscopy (OM), a ferritscope (FS), a X-ray diffractometer (XRD), scanning electron microscopy (SEM), an electron probe micro-analyzer (EPMA), and a wavelength dispersive spectrometer (WDS), respectively. Massive δ-ferrite was observed in the fusion zone of the first pass welds during welding of dissimilar stainless steels. The σ phase precipitated at the inner δ-ferrite particles and decreased δ-ferrite content during the third pass welding. The σ and δ phases can be stabilized by Si element, which promoted the phase transformation of σ→ϱ+λ₂ in the fusion zone of the third pass welds. It was found that the σ phase was a Fe−Cr−Si intermetallic compound found in the fusion zone of the third pass welds during multi-pass welding.     

Anomalous variations of OFF-State leakage current in poly-Si TFTunder static stress

Studies the anomalous variations of the OFF-state leakage current (I_OFF) in n-channel poly-Si thin-film transistors (TFTs) under static stress. The dominant mechanisms for the anomalous I_OFF can be attributed to (1) I_OFF increases due to channel hot electrons trapping at the gate oxide/channel interface and silicon grain boundaries and (2) I_OFF decreases due to hot holes accumulated/trapped near the channel/bottom oxide interface near the source region. Under the stress of high drain bias, serious impact ionization effect will occur to generate hot electrons and hot holes near the drain region. Some of holes will be injected into the gate oxide due to the vertical field (~(V_Gstress V_Dstress)/T _OX) near the drain and the others will be migrated from drain to source along the channel due to lateral electric field (~V_Dstress/L_CH)     

A new method for calculating loss coefficients [of power systems]

A method is proposed which avoids many limitations associated with traditional B-coefficient loss coefficient calculation. The proposed method, unlike the traditional B-coefficient method, is very fast and can handle line outages. The method utilizes network sensitivity factors which are established from DC load flow solutions, Line outage distribution factors (ODFs) are formulated using changes in network power generations to simulate the outaged line from the network. The method avoids the use of complicated reference frame transformations based upon Kron's tenser analysis. The necessity of data normalization used in least squares and the evaluation of the slope of &thetas;_j versus PG_n is not necessary with the proposed method. Using IEEE standard 14-bus and 30-bus systems, the method's results are compared against results obtained from an AC load flow program (LFED). The method's solution speed is compared to that of the LFED method, the base case database method and the conventional B-coefficient method based on A_jn-factor. The proposed method is easy to implement and, when compared to other methods, has exhibited good accuracy and rapid execution times. The method is well suited to online dispatch applications     

Optimization of a schottky barrier mixer diode in the submillimeter wave region

We have designed a mixer Schottky barrier diode (SBD) for use in the submillimeter wave region with a structure optimized for minimum noise temperature. The dependence of mixer noise temperature upon thickness and doping density of the epitaxial layer and diode diameter of SBDs was simulated within the framework of existing theories. Special care was taken to formulate the SBD current-voltage and capacitance-voltage relations in a way that correctly describes the behavior of real SBDs.