Design and demonstration of polarization-insensitive Mach-Zehnderswitch using a lattice-matched InGaAlAs/InAlAs MQW and deep-etchedhigh-mesa waveguide structure

The authors have designed and demonstrated a 2×2 Mach-Zehnder switch in view of polarization independence as well as low propagation loss (α) and absorption change (Δα). To obtain polarization-insensitive refractive index change (Δn), a lattice-matched InGaAlAs-InAlAs multiple quantum-well (MQW) with a large detuning wavelength was used. Moreover, to reduce the insertion loss difference between polarizations, we applied a multimode-interferometer 3-dB coupler and a deep-etched high-mesa waveguide structure. This switch, therefore, can provide polarization-independent operation about both driving voltage and insertion loss, which is indispensable to practical optical switching applications. We also paid attention to Δα suppression when we decided the value of wavelength detuning and the length of the phase shift region. We also investigated the wavelength dependence of the switch. Within 1530-1560 nm, which is the erbium-doped fiber amplifier (EDFA) gain band, polarization independence in the driving voltage and the crosstalk was maintained. This result shows that the switch is also applicable in wavelength division multiplexing (WDM) applications     

4*4 directional coupler switch matrix with an InGaAlAs/InAlAs multiquantum well structure

A 4*4 directional coupler switch matrix is developed which uses, for the first time, the quantum confined Stark effect of InGaAlAs/InAlAs multiquantum well structures. The rearrangeable nonblocking 4*4 network with six 2*2 switches is shown to be perfectly functional with switching voltages between 5 and 6 V and crosstalk below -17 dB in all the operation states.<>     

Over 1100 nm wavelength tuning in superstructure grating (SSG) DBR lasers

A broad range tuning of over 100 nm in tunable DBR lasers with superstructure grating (SSG) is reported. The SSG reflectors for 100 nm were designed and patterned by electron beam lithography. 1.55 mu m DBR lasers with SSG reflector operate in a single mode with a tuning range of 83 nm under CW conditions. With inclusion of the multimode operating region, the tuning range becomes as wide as 103 nm.<>     

A simple laterally tapered waveguide for low-loss coupling tosingle-mode fibers

Low-loss coupling between semiconductor photonic devices and single-mode fibers is achieved using a simple InP/InGaAsP tapered waveguide. The proposed simple structure has a small and nearly square guiding core at its output facet. In this structure, the output field has a non-Gaussian profile, but low-pass filter coupling can be achieved by optimizing the design of the guiding core sizes. The waveguide is composed of a laterally tapered InGaAsP guiding layer and an InP cladding region on an InP substrate, facilitating integration of the waveguide with active devices using conventional processes. The waveguide is shown to have a total insertion loss of 2.6 dB, including a coupling loss of 0.9 dB and large ±2.5-μm misalignment tolerance in lateral and vertical directions with single-mode filters     

A 320 MFLOPS CMOS floating-point processing unit for superscalarprocessors

A CMOS pipelined floating-point processing unit (FPU) for superscalar processors is described. It is fabricated using a 0.5 μm CMOS triple-metal-layer technology on a 61 mm² die. The FPU has two execution modes to meet precise scientific computations and real-time applications. It can start two FPU operations in each cycle, and this achieves a peak performance of 160 MFLOPS double or single precision with an 80 MHz clock. Furthermore, the original computation mode, twin single-precision computation, double the peak performance and delivers 320 MFLOPS single precision. Its full bypass reduces the latency of operations, including load and store, and achieves an effective throughput even in nonvectorizable computations. An out-of-order completion is provided by using a new exception prediction method and a pipeline stall technique     

InxGa1−xAs ohmic contacts to n-type GaAs with a tungsten nitride barrier

Significant reduction of the contact resistance of In_0.7Ga_0.3As/Ni/W contacts (which were previously developed by sputtering in our laboratory) was achieved by depositing a W₂N barrier layer between the Ni layer and W layer. The In_0.7Ga_0.3 As/Ni/W₂N/W contact prepared by the radio-frequency sputtering technique showed the lowest contact resistance of 0.2 Ωmm after annealing at 550°C for 10 s. This contact also provided a smooth surface, good reproducibility, and excellent thermal stability at 400°C. The polycrystalline W₂N layer was found to suppress the In diffusion to the contact surface, leading to improvement of the surface morphology and an increase in the total area of the In_xGa−As between metal and the GaAs substrate. These improvements are believed to reduce the contact resistance.     

An image analyzing system using an artificial neural network forevaluating the parenchymal echo pattern of cirrhotic liver and chronichepatitis

To objectively evaluate the parenchymal echo pattern of cirrhotic liver and chronic hepatitis, the authors applied an image analyzing system (IAS) using a neural network. Autopsy specimens in a water tank (n=13) were used to examine the relationship between the diameter of the regenerative nodule and the coarse score (CS) calculated by IAS. CS was significantly correlated with the diameter of the regenerative nodule (p<0.0001, r=0.966). CS is considered to be useful for evaluating the coarseness of the parenchymal echo pattern     

High-input-power saturation properties of apolarization-insensitive semiconductor Mach-Zehnder interferometer gateswitch for WDM applications

We propose that a polarization-insensitive Mach-Zehnder interferometer (MZI) switch is useful for optical gate elements, especially if multiwavelength signals are input. This device has high-input-power saturation properties, which shows that both the operating voltage and the extinction ratio do not change when the optical input power reaches at least +18 dBm. A high extinction ratio of 30 dB was achieved in the wide-wavelength range of 20 nm. Moreover, the extinction ratio can be improved by up to 45 dB by using a cascaded configuration to decrease crosstalk. These results indicate the MZI gate switch is well suited to wavelength-division multiplexing (WDM) network components     

Still image transmission using ARQ over Rayleigh fading channels

The authors propose a new ARQ scheme suitable for image transmission over radio channels. The proposed scheme detects only serious degradation and so attains higher throughput performance than the conventional ARQ scheme     

Dynamic voltage and frequency management for a low-power embedded microprocessor

High-performance and low-power microprocessors are key to PDA applications. A dynamic voltage and frequency management (DVFM) scheme with leakage power compensation effect is introduced in a microprocessor with 128-bit wideband 64-Mb embedded DRAM. The DVFM scheme autonomously controls clock frequency from 8 to 123 MHz in steps of 0.5 MHz and also adaptively controls supply voltage from 0.9 to 1.6 V in steps of 5 mV, achieving 82% power reduction in personal information management scheduler application and 40% power reduction in MPEG4 movie playback. This low-power embedded microprocessor, fabricated with 0.18-/spl mu/m CMOS embedded DRAM technology, enables high-performance operations such as audio and video applications. As process technology shrinks, this adaptive leakage power compensation scheme will become more important in realizing high-performance and low-power mobile consumer applications.