Ag/Ni Metallization Bilayer: A Functional Layer for Highly Efficient Polycrystalline SnSe Thermoelectric Modules

The structural and electrical characteristics of Ag/Ni bilayer metallization on polycrystalline thermoelectric SnSe were investigated. Two difficulties with thermoelectric SnSe metallization were identified for Ag and Ni single layers: Sn diffusion into the Ag metallization layer and unexpected cracks in the Ni metallization layer. The proposed Ag/Ni bilayer was prepared by hot-pressing, demonstrating successful metallization on the SnSe surface without interfacial cracks or elemental penetration into the metallization layer. Structural analysis revealed that the Ni layer reacts with SnSe, forming several crystalline phases during metallization that are beneficial for reducing contact resistance. Detailed investigation of the Ni/SnSe interface layer confirms columnar Ni-Sn intermetallic phases [(Ni₃Sn and Ni₃Sn₂) and Ni_5.63SnSe₂] that suppress Sn diffusion into the Ag layer. Electrical specific-contact resistivity (5.32 × 10^?4 Ω cm²) of the Ag/Ni bilayer requires further modification for development of high-efficiency polycrystalline SnSe thermoelectric modules.     

Formation of n-channel polycrystalline-Si thin-film transistors by using retrograde channel scheme with double implantation

Excellent n-channel poly-Si thin-film transistors (poly-Si TFTs) have been formed by using retrograde channel scheme with channel doping implantation and extra counter-doping implantation. As compared to the conventional sample with undoped channel layer, a much smaller leakage current can be achieved by boron-doping the poly-Si channel layer, due to a significantly reduced depletion region. However, the on-state characteristics are degraded. A retrograde channel scheme, implemented by further phosphorus counter-doping the surface of the boron-doped channel layer, is proposed for lowering the channel surface doping concentration without changing the bulk channel doping concentration. By using the retrograde channel scheme, an off-state leakage current as low as that for the normal channel-doping scheme may be achieved, while yielding excellent on-state I-V transfer characteristics.     

Two-dimensional threshold voltage analytical modes of DMG strained-silicon-on-insulator MOSFETs

For the first time, a simple and accurate two-dimensional analytical model for the surface potential variation along the channel in fully depleted dual-material gate strained-Si-on-insulator (DMG SSOI) MOSFETs is developed. We investigate the improved short channel effect (SCE), hot carrier effect (HCE), drain-induced barrier-lowering (DIBL) and carrier transport efficiency for the novel structure MOSFET. The analytical model takes into account the effects of different metal gate lengths, work functions, the drain bias and Ge mole fraction in the relaxed SiGe buffer. The surface potential in the channel region exhibits a step potential, which can suppress SCE, HCE and DIBL. Also, strained-Si and SOI structure can improve the carrier transport efficiency, with strained-Si being particularly effective. Further,the threshold voltage model correctly predicts a "rollup" in threshold voltage with decreasing channel length ratios or Ge mole fraction in the relaxed SiGe buffer. The validity of the two-dimensional analytical model is verified using numerical simulations.     

基于BTHQZn的黄色有机电致发光器件

通过研究新型荧光材料2-(2-溴-5-乙烯-噻吩)-8-羟基喹啉锌(BTHQZn)的电致发光特性,发现BTHQZn具有良好的电致发光特性和空穴传输特性,利用此特性制备了掺杂型有机电致黄光器件,结构为ITO/2T-NATA(30nm)/CBP∶5%Ir(ppy)3∶10%BTHQZn(20nm)/Alq3(50nm)/LiF(0.5nm)/Al,器件在12V时实现了黄绿光发射,最大发光亮度为4552cd/m2,色坐标为(0.3954,0.4976),在11V电压下的最大发光效率为2.82cd/A。     

High-performance Poly(biphenyl piperidinium) Type Anion Exchange Membranes with Interconnected Ion Transfer Channels: Cooperativity of Dual Cations and Fluorinated Side Chains

The performance of alkaline fuel cells is severely limited by substandard anion exchange membranes (AEMs) due to the lower ionic conductivity compared to the proton exchange membranes. The ionic conductivity of AEMs can be effectively improved by regulating the microphase structure, but it still cannot meet the practical use requirements. Here, enhanced microphase-separated structures are constructed by the cooperativity of highly hydrophilic dual cations and highly hydrophobic fluorinated side chains. Meanwhile, the introduction of  O enhances the flexibility of side chains and facilitates the formation of ion transport channels. The dual piperidinium cation functionalized membrane (PB2Pip-5C8F) which is grafted with the ultra-hydrophobic fluorocarbon chain exhibits a high conductivity of 74.4 mS cm⁻¹ at 30 °C and 168.46 mS cm⁻¹ at 80 °C. Furthermore, the PB2Pip-5C8F membrane achieves the highest peak power density of 718 mW cm⁻² at 80 °C under a current density of 1197 mA cm⁻² without back pressure. A long-term life cell test of this AEM shows a low voltage decay rate of 1.68 mV h⁻¹ over 70 h of operation at 80 °C.     

A Conductive 2D Conjugated Tetrathia[8]circulene-Based Nickel Metal–Organic Framework for Energy Storage

Herein, a novel D₄ symmetrical redox-active ligand tetrathia[8]circulene-2,3,5,6,8,9,11,12-octaol (8OH-TTC) is designed and synthesized, which coordinates with Ni²⁺ ions to construct a 2D conductive metal-organic framework (2D c-MOF) named Ni-TTC. Ni-TTC exhibits typical semiconducting properties with electrical conductivity up to ≈1.0 S m⁻¹ at 298 K. Furthermore, magnetism measurements show the paramagnetic property of Ni-TTC with strong antiferromagnetic coupling due to the presence of semiquinone ligand radicals and Ni²⁺ sites. In virtue of its decent electrical conductivity and good redox activity, the gravimetric capacitance of Ni-TTC is up to 249 F g⁻¹ at a discharge rate of 0.2 A g⁻¹, which demonstrates the potential of tetrathia[8]circulene-based redox-active 2D c-MOFs in energy storage applications.     

军、民通信网络融合的模式研究

军民融合是统筹经济社会发展和国防建设的重大战略思想,其实质就是打破资源利用界限,实现"一份投入、两份产出"。军民通信融合是军民融合的重要组成部分。信息技术的快速发展使得网络融合成为网络发展的必然趋势,军事通信网络和民用通信网络在技术方面具有一致性,军民两用性的通信技术、密码技术为军、民网络的融合提供了基础。在阐述网络融合技术的基础上,提出了军、民通信网络融合的两种模式:集成模式和叠加模式,并针对两种模式分别给出了融合的方案。     

Millimeter wave band ultra wideband transmitter MMIC

This paper presents a new millimeter-wave (MMW) ultra wideband (UWB) transmitter MMIC which has been developed in an OMMIC 0.1 μm GaAs PHEMT foundry process (f_t = 100 GHz) for 22-29 GHz vehicular radar systems. The transmitter is composed of an MMW negative resistance oscillator (NRO), a power amplifier (PA), and two UWB pulse generators (PGs). In order to convert the UWB pulse signal to MMW frequency and reduce the total power consumption, the MMW NRO is driven by one of the UWB pulse generators and the power amplifier is triggered by another UWB pulse generator. The main advantages of this transmitter are: new design, simple architecture, high-precision distance measurements, infinite ON/OFF switch ratio, and low power consumption. The total power consumption of the transmitter MMIC is 218 mW with a peak output power of 5.5 dBm at 27 GHz.     

迭代对角加载采样矩阵求逆鲁棒自适应波束形成

为有效克服导向矢量大失配误差对自适应波束形成器的影响,该文提出了一种迭代对角加载采样矩阵求逆鲁棒自适应波束形成算法。该算法对传统对角加载算法进行了迭代运算,基于Capon波束形成器的最优权矢量与假定导向矢量的基本关系,将每一步得到的权矢量,对应反解出一个比导向矢量假定值更为准确的导向矢量,并替代假定值,最终逼近真实的期望信号导向矢量。提出的方法在迭代过程中只需一步递推,无需对导向矢量建立不确定集,避免了在每步迭代中运用拉格朗日数值法或凸优化法,且明显提高了波束形成器的输出信干噪比。仿真结果验证了算法的正确性和有效性。     

基于稀疏最小二乘支持向量回归的非线性自适应波束形成

该文基于最小二乘支持向量回归(LS-SVR)模型提出一种非线性自适应波束形成算法,以提高模型失配、小样本数、复杂多干扰等情况下的自适应波束形成器的鲁棒性。推导了高维矩阵逆矩阵求解的递推快速算法,实现了回归参数的实时求解。采用奇异性准则实时寻找输入样本集的具有较小信息冗余度的子集,并在该子集上完成波束形成计算,使得LS-SVR波束形成的求解得以稀疏化,提高了学习效率,降低了计算复杂度与系统存储空间需求。对比仿真结果验证了所提算法的正确性和有效性。