Valorisation of waste fractions from autohydrolysis of selected lignocellulosic materials

Non‐isothermal processing of lignocellulosic materials in aqueous media (autohydrolysis reaction) under mild conditions leads to solutions containing valuable chemicals (oligosaccharides, sugars and acetic acid) and other, undesired, compounds (belonging to the extractive and acid‐soluble lignin fractions) which have to be removed in further purification treatments. Liquors obtained by non‐isothermal autohydrolysis of Eucalyptus globulus wood and corncobs under a variety of operational conditions were extracted with ethyl acetate in order to remove non‐saccharide components, and the suitability of the fraction dissolved in the organic phase was assayed for possible utilisation as an antioxidant. The yield and antioxidant activity of ethyl acetate extracts (measured by the α,α‐diphenyl‐β‐picrylhydrazyl (DPPH) radical scavenging capacity) showed a strong dependence on the autohydrolysis conditions. The antioxidant activity of extracts obtained under selected operational conditions compared well with synthetic antioxidants. © 2003 Society of Chemical Industry     

Minimax estimation of deterministic parameters in linear models with a random model matrix

We consider the problem of estimating an unknown deterministic parameter vector in a linear model with a random model matrix, with known second-order statistics. We first seek the linear estimator that minimizes the worst-case mean-squared error (MSE) across all parameter vectors whose (possibly weighted) norm is bounded above. We show that the minimax MSE estimator can be found by solving a semidefinite programming problem and develop necessary and sufficient optimality conditions on the minimax MSE estimator. Using these conditions, we derive closed-form expressions for the minimax MSE estimator in some special cases. We then demonstrate, through examples, that the minimax MSE estimator can improve the performance over both a Baysian approach and a least-squares method. We then consider the case in which the norm of the parameter vector is also bounded below. Since the minimax MSE approach cannot account for a nonzero lower bound, we consider, in this case, a minimax regret method in which we seek the estimator that minimizes the worst-case difference between the MSE attainable using a linear estimator that does not know the parameter vector, and the optimal MSE attained using a linear estimator that knows the parameter vector. For analytical tractability, we restrict our attention to the scalar case and develop a closed-form expression for the minimax regret estimator.     

Second harmonic generation from a ferroelectric film

We derive an expression for transmittivity (T_SHG) of second harmonic generation (SHG) signals from a ferroelectric (FE) film. Intensities of up and down fields in the medium are investigated in relation to T_SHG. The derivations are made based on undepletion of input fields and nonlinear wave equation derived from the Maxwell equations. We present two cases: film without mirrors and with partial mirrors. Expressions for the newly derived nonlinear susceptibility coefficients of SHG for real crystal symmetry [J. Opt. Soc. Am. B 19 (2002) 2007] are used to get more realistic results. Variations in T_SHG with respect to film thickness are illustrated.     

1/f noise in large-area Hg<Subscript>1−x</Subscript>Cd<Subscript>x</Subscript>Te photodiodes

The 1/f noise in photovoltaic (PV) molecular-beam epitaxy (MBE)-grown Hg_1−xCd_xTe double-layer planar heterostructure (DLPH) large-area detectors is a critical noise component with the potential to limit sensitivity of the cross-track infrared sounder (CrIS) instrument. Therefore, an understanding of the origins and mechanisms of noise currents in these PV detectors is of great importance. Excess low-frequency noise has been measured on a number of 1000-μm-diameter active-area detectors of varying “quality” (i.e., having a wide range of I-V characteristics at 78 K). The 1/f noise was measured as a function of cut-off wavelength under illuminated conditions. For short-wave infrared (SWIR) detectors at 98 K, minimal 1/f noise was measured when the total current was dominated by diffusion with white noise spectral density in the mid-10⁻¹⁵A/Hz^1/2 range. For SWIR detectors dominated by other than diffusion current, the ratio, α, of the noise current in unit bandwidth i_n(f = 1 Hz, V_d = −60 mV, and Δf = 1 Hz) to dark current I_d(V_d = −60 mV) was α_SW-d = i_n/I_d ∼ 1 × 10⁻³. The SWIR detectors measured at 0 mV under illuminated conditions had median α_SW-P = i_n/I_ph ∼ 7 × 10⁻⁶. For mid-wave infrared (MWIR) detectors, α_MW-d = i_n/I_d ∼ 2 × 10⁻⁴, due to tunneling current contributions to the 1/f noise. Measurements on forty-nine 1000-μm-diameter MWIR detectors under illuminated conditions at 98 K and −60 mV bias resulted in α_MW-P = i_n/I_ph = 4.16 ± 1.69 × 10⁻⁶. A significant point to note is that the photo-induced noise spectra are nearly identical at 0 mV and 100 mV reverse bias, with a noise-current-to-photocurrent ratio, α_MW-P, in the mid 10⁻⁶ range. For long-wave infrared (LWIR) detectors measured at 78 K, the ratio, α_LW-d = i_n/I_d ∼ 6 × 10⁻⁶, for the best performers. The majority of the LWIR detectors exhibited α_LW-d on the order of 2 × 10⁻⁵. The photo-induced 1/f noise had α_LW-P = i_n/I_ph ∼ 5 × 10⁻⁶. The value of the noise-current-to-dark-current ratio, α appears to increase with increasing bandgap. It is not clear if this is due to different current mechanisms impacting 1/f noise performance. Measurements on detectors of different bandgaps are needed at temperatures where diffusion current is the dominant current. Excess low-frequency noise measurements made as a function of detector reverse bias indicate 1/f noise may result primarily from the dominant current mechanism at each particular bias. The 1/f noise was not a direct function of the applied bias.     

Training and optimization of an artificial neural network controlling a hybrid power filter

A hybrid power compensator (HPC) consisting of a static VAr compensator and a dynamic compensator needs to be optimally controlled during the compensation of nonlinear loads. The HPC must be controlled to meet minimum requirements in terms of power factor and harmonic distortion, while at the same time minimizing its total cost. An artificial neural network (ANN) is used to control the HPC amidst a very dynamic power system environment. The performance of a reference ANN is evaluated while controlling an HPC connected to a typical nonlinear industrial load. The training and performance of the ANN is then optimized in terms of training set size, training set packing and ANN topology and the performance compared to the reference ANN. This paper highlights the importance of optimising the mentioned ANN parameters to achieve optimum ANN training and modeling accuracy. The results obtained reveals that the application of an ANN in controlling an HPC is feasible given that the ANN parameters are chosen appropriately.     

Synthesis of ZSM‐5 Films and Monoliths with Bimodal Micro/Mesoscopic Structures

A route to synthesize ZSM‐5 crystals with a bimodal micro/mesoscopic pore system has been developed in this study; the successful incorporation of the mesopores within the ZSM‐5 structure was performed using tetrapropylammonium hydroxide (TPAOH)‐impregnated mesoporous materials containing carbon nanotubes in the pores, which were encapsulated in the ZSM‐5 crystals during a solid rearrangement process within the framework. Such mesoporous ZSM‐5 zeolites can be readily obtained as powders, thin films, or monoliths.     

The First Template‐Free Growth of Crystalline Silicon Microtubes

A simple template‐free high‐temperature evaporation method was developed for the growth of crystalline Si microtubes for the first time. As‐grown Si microtubes were characterized using X‐ray diffraction, scanning electron microscopy, transmission electron microscopy, and room‐temperature photoluminescence. The lengths of the Si tubes can reach several hundreds of micrometers; some of them have lengths on the order of millimeters. Each tube has a uniform outer diameter along its entire length, and the typical outer diameter is ≈ 2–3 μm. Most of the tubes have a wall thickness of ≈ 400–500 nm, though a considerable number of them exhibit a very thin wall thickness of ≈ 50 nm. Room‐temperature photoluminescence measurement shows the as‐synthesized Si microtubes have two strong emission peaks centered at ≈ 589 nm and ≈ 617 nm and a weak emission peak centered at ≈ 455 nm. A possible mechanism for the formation of these Si tubes is proposed. We believe that the present discovery of the crystalline Si microtubes will promote further experimental studies on their physical properties and smart applications.     

Influence of device engineering on the analog and RF performances of SOI MOSFETs

This work presents a systematic comparative study of the influence of various process options on the analog and RF properties of fully depleted (FD) silicon-on-insulator (SOI), partially depleted (PD) SOI, and bulk MOSFET's with gate lengths down to 0.08 /spl mu/m. We introduce the transconductance-over-drain current ratio and Early voltage as key figures of merits for the analog MOS performance and the gain and the transition and maximum frequencies for RF performances and link them to device engineering. Specifically, we investigate the effects of HALO implantation in FD, PD, and bulk devices, of film thickness in FD, of substrate doping in SOI, and of nonstandard channel engineering (i.e., asymmetric Graded-channel MOSFETs and gate-body contacted DTMOS).