Fabrication of Sub‐10 nm Metallic Lines of Low Line‐Width Roughness by Hydrogen Reduction of Patterned Metal–Organic Materials

The fabrication of very narrow metal lines by the lift‐off technique, especially below sub‐10 nm, is challenging due to thinner resist requirements in order to achieve the lithographic resolution. At such small length scales, when the grain size becomes comparable with the line‐width, the built‐in stress in the metal film can cause a break to occur at a grain boundary. Moreover, the line‐width roughness (LWR) from the patterned resist can result in deposited metal lines with a very high LWR, leading to an adverse change in device characteristics. Here a new approach that is not based on the lift‐off technique but rather on low temperature hydrogen reduction of electron‐beam patterned metal naphthenates is demonstrated. This not only enables the fabrication of sub‐10 nm metal lines of good integrity, but also of low LWR, below the limit of 3.2 nm discussed in the International Technology Roadmap for Semiconductors. Using this method, sub‐10 nm nickel wires are obtained by reducing patterned nickel naphthenate lines in a hydrogen‐rich atmosphere at 500 °C for 1 h. The LWR (i.e., 3 σ_LWR) of these nickel nanolines was found to be 2.9 nm. The technique is general and is likely to be suitable for fabrication of nanostructures of most commonly used metals (and their alloys), such as iron, cobalt, nickel, copper, tungsten, molybdenum, and so on, from their respective metal–organic compounds.     

Proposal for an Inundation Hazard Index of Road Links for Safer Routing Services in Car Navigation Systems

Inundation of roads by heavy rainfall has attracted more attention than traffic accidents, traffic congestion, and construction because it simultaneously causes travel delays and threatens driver safety. For these reasons, in this paper, we propose an inundation hazard index (IHI) of road links, which shows the possibility of inundation of road links caused by rainfall. To generate the index, we have used two key data sources, namely the digital elevation model (DEM) and past rainfall records of when inundation has occurred. IHI is derived by statistically analyzing the relationships between the normalized relative height of the road links calculated from DEM within the watershed and past rainfall records. After analyzing the practical applicability of the proposed index with a commercial car navigation system through a set of tests, we confirmed that the proposed IHI could be implemented to choose safer routes, with reduced chances of encountering roads having inundation risks.s     

Density‐adaptive network reprogramming protocol for wireless sensor networks

Network reprogramming is a process used to update program codes of sensor nodes that are already deployed. To deal with potentially unstable link conditions of wireless sensor networks, the epidemic approach based on 3‐way advertise‐request‐data handshaking is preferred for network reprogramming. Existing epidemic protocols, however, require a long completion period and high traffic overhead in high‐density networks, mainly due to the hidden terminal problem. In this paper, we address this problem by dynamically adjusting the frequency of advertisement messages in terms of the density of sensor nodes, which is the number of sensor nodes in a certain area. We compare the performance of the proposed scheme, called DANP (Density‐Adaptive Network Reprogramming Protocol), with a well‐known epidemic protocol, Deluge. Simulations indicate that, in the grid topologies, DANP outperforms Deluge by about 30% in terms of the completion time and about 50% in terms of the traffic overhead. Significant performance gain is observed in random topologies as well. The performance of DANP is further confirmed via measurements in an experimental test bed. Copyright © 2009 John Wiley & Sons, Ltd.     

Signaling and Control Procedures Using Generalized MPLS Protocol for IP over an Optical Network

This paper reviews the existing research activities on signaling and control procedures for IP over optical networks. We focus on the IP‐centric signaling and control architecture based on the generalized multi‐protocol label switching (GMPLS) protocol and analyze various scenarios and technical issues for deploying the IP over an optical network. We analyze the signaling and operations and administration and maintenance requirements for integrating an IP network and an optical network in order to cope with the high bandwidth and poor resource granularity of the optical network, including the optical cross‐connect system. On the basis of network architecture and a reference configuration model, we investigate the GMPLS‐based control architecture and interconnection model appropriate for controlling IP bandwidth and optical lambda resources. The signaling and control procedure based on GMPLS on optical user‐network interface and network‐network interface are comparatively investigated to provide the optical lightpath. We also study protection and restoration procedures to protect link failure when it applies to GMPLS signaling.     

All‐Carbon Nanotube‐Based Flexible Field‐Emission Devices: From Cathode to Anode

The fabrication of a flexible field‐emission device (FED) using single‐walled carbon nanotube (SWNT) network films as the conducting electrodes (anode and cathode) and thin multi‐walled CNT/TEOS hybrid films as the emitters is reported. P‐type doping with gold ions and passivation with tetraethylorthosilicate (TEOS) made the SWNT network film highly conductive and environmentally stable, and hence a good alternative to conventional indium tin oxide electrodes. CNT/TEOS hybrid emitters showed high current density, low turn‐on field, and long‐term emission stability, compared with CNT emitters; these characteristics can be attributed to the TEOS sol, acting both as a protective layer surrounding the nanotube tip, and as an adhesive layer enhancing the nanotube adhesion to the substrate. All‐CNT‐based flexible FEDs fabricated by this approach showed high flexibility in field emission characteristics and extremely bright electron emission patterns.     

基于盲源分离和时频分析的漏磁信号处理

利用独立分量分析的冗余取消特性,对多维加噪声观测信号进行盲源分离,得到源观测信号,实现噪声的有效消除,文章中应用此方法处理了仿真漏磁缺陷信号,实验结果表明:该除噪方法能极大提高漏磁信号的信噪比,且其效果要优于小波变换除噪方法.漏磁缺陷信号在时域上波形非常相似,很难加以分辨,而它们的危害性却大不相同,文章对裂纹和凹坑缺陷信号进行小波包分解,根据信号特征自适应的产生一组最优基来表征信号,分析这两种缺陷的时频特性,准确识别出这两种缺陷.     

Effects of Interfacial Dielectric Layers on the Electrical Performance of Top‐Gate In‐Ga‐Zn‐Oxide Thin‐Film Transistors

We investigate the effects of interfacial dielectric layers (IDLs) on the electrical properties of top‐gate In‐Ga‐Zn‐oxide (IGZO) thin film transistors (TFTs) fabricated at low temperatures below 200°C, using a target composition of In:Ga:Zn = 2:1:2 (atomic ratio). Using four types of TFT structures combined with such dielectric materials as Si₃N₄ and Al₂O₃, the electrical properties are analyzed. After post‐annealing at 200°C for 1 hour in an O₂ ambient, the sub‐threshold swing is improved in all TFT types, which indicates a reduction of the interfacial trap sites. During negative‐bias stress tests on TFTs with a Si3N4 IDL, the degradation sources are closely related to unstable bond states, such as Si‐based broken bonds and hydrogen‐based bonds. From constant‐current stress tests of Id = 3 µA, an IGZO‐TFT with heat‐treated Si₃N₄ IDL shows a good stability performance, which is attributed to the compensation effect of the original charge‐injection and electron‐trapping behavior.     

An improved sensorless driving method for SRM using a phase-shift circuit technique

This paper presents an improved sensorless driving method for switched reluctance motor (SRM) using a phase-shift circuit technique. The conventional method consists of impressing short voltage pulses during unenergized phases, measuring the phase current pulses, and finding the correlation between the filtered current signals and rotor position. However, the filtering process causes a signal phase delay which varies with motor speed. This delay must be compensated for in providing the sensorless signal which is proper to the rotor position. A solution for this phase delay compensation, based on a simple analog and digital circuit, is proposed in this paper.     

Phase-separated polydimethylsiloxane as a dielectric surface treatment layer for organic field effect transistors

We suggest a novel method for treating the surfaces of dielectric layers in organic field effect transistors (OFETs). In this method, a blend of poly(9,9-dioctylfluorene-alt-bithiophene) (F8T2) and dimethylsiloxane (DMS) with a curing agent is spin coated onto the surface of a dielectric substrate, silicon oxide (SiO₂), and then thermally cured. X-ray photoelectron spectroscopy, contact angle measurements, and morphology analysis were used to show that the hydrophilic DMS layer is preferentially adsorbed on the SiO₂ substrate during the spin coating process. After thermal curing, the bottom DMS layer becomes a hydrophobic PDMS layer. This bottom PDMS layer becomes thinner during curing due to the upward motion of the hydrophobic PDMS molecules. The FET mobility of the cured system was 10^?2 cm²/Vs, which is similar to that of polymeric semiconductors on octadecyltrichlorosilane treated SiO₂ dielectric layers. We also discuss the possibility of using this blend method to increase the air-stability of polymeric semiconductors.