光斑尺寸对光热失调技术测量光学薄膜吸收的影响

样品表面加热光斑和探测光斑的大小对光热技术有着重要影响,光热失调技术是一种新的可用于研究光学薄膜的微弱吸收的方法,文章理论分析了加热光斑和探测光斑尺寸对光热失调技术的影响.研究表明,加热光斑大小不变时,加热光调制频率增大,样品表面温升降低,温度分布区域减小;调制频率不变时,加热光斑越小,表面温升越大,分布区域越小.调制频率不变时,探测光斑越小,信号幅值越大,分布区域越小,信号幅值与加热光功率的线性关系的斜率越大,探测光斑的大小对信号幅频关系影响较小.研究结果对光热失调技术测量光学薄膜吸收具有重要意义.     

Statistical analysis of subthreshold leakage current for VLSI circuits

We develop a method to estimate the variation of leakage current due to both intra-die and inter-die gate length process variability. We derive an analytical expression to estimate the probability density function (PDF) of the leakage current for stacked devices found in CMOS gates. These distributions of individual gate leakage currents are then combined to obtain the mean and variance of the leakage current for an entire circuit. We also present an approach to account for both the inter- and intra-die gate length variations to ensure that the circuit leakage PDF correctly models both types of variation. The proposed methods were implemented and tested on a number of benchmark circuits. Comparison to Monte Carlo simulation validates the accuracy of the proposed method and demonstrates the efficiency of the proposed analysis method. Comparison with traditional deterministic leakage current analysis demonstrates the need for statistical methods for leakage current analysis.     

对IPSec VPN进行运营管理的若干问题的研究

网络管理系统是IPSec(IP security,IP安全)VPN(virtual private network,虚拟专用网络)作为一种电信运营业务的关键组成部分.VPN节点设备部署在运营商网络的边缘,这种网络模式使得对节点的管理不同于对传统网络的管理,其中,VPN业务网络拓扑的自动发现和对私有网络中的设备进行管理是两个关键的问题.本文通过在网络管理系统中指定根节点,然后利用根节点中的SA(security association,安全联盟)信息来获得其他VPN节点的地址信息,从而实现VPN拓扑的自动发现;针对私有网络中的设备地址不可达的问题,本文提出了主动注册的技术,并利用主动注册同网络管理代理转发技术相结合的方法实现了对私有网络中设备的管理.     

含能材料热安全性的预测方法

根据分解反应动力学分析了含能材料在绝热和近似绝热条件下的热分解反应。结果表明,在该条件下含能材料发生的热分解反应只与材料本身的特性相关,而与外界环境的影响无关,利用热分解反应的特征来评价含能材料本身的热安全特性,得出了含能材料开始发生热分解反应初始湿度的计算公式。     

61单元分立式压电变形反射镜的研制

用于校正波前误差的61单元分立式压电变形反射镜是61单元自适应光学系统（AO）的关键器件之一。由于系统对单元数（61单元）和变形量（±3μm）的要求超过以往曾研制的变形镜，对研制工作带来许多困难。我们从理论分析到工艺研究采取措施，使研制的变形镜成功用于AO系统实验。     

哈特曼波前传感器的应用

夏克—哈特曼（S－H）波前传感器可以用很高的采样频率同时测量出光场的相位分布和强度分布。它不仅作为波前传感器广泛地应用于自适应光学系统之中，而且还用于光学元件和光学系统的检测、激光光束质量诊断和大气扰动测量之中。我们研制了一系列S－H波前传感器。本文总结了这些传感器在不同领域的测量结果。     

Multispectral data compression using bidirectional interbandprediction

The introduction of high spatial and spectral resolution sensors on-board remote-sensing spacecraft has increased, by orders of magnitude, the data rates which need to be sustained on the down-link or cross-link transmission channels. Since these channels are severely limited in capacity, the need arises to perform on-board compression to reduce the volume of data which would need to be down-linked. This paper discusses the development and refinement of a low complexity lossy spectral/spatial compression method which provides high compression ratios at low levels of distortion. The developed techniques uses pixels in adjacent bands to predict the intensity of pixels in the band being compressed via a simple linear prediction model. This prediction method when combined with a low-distortion discrete cosine transform (DCT) block coding method yields performance comparable to block-adaptive Karhunen-Loeve Transform (KLT)-DCT methods without incurring the complexity penalty of the KLT. The methods' performance suffers under misregistration. A fractional-pixel interpolation enhancement to the basic technique significantly improves the performance in the case of misregistered bands     

Hysteresis behavior in 85-nm channel length vertical n-MOSFETsgrown by MBE

Vertical n-MOSFETs with channel lengths of 85 nm have been grown by MBE. For drain-to-source voltages V_DS>3.3 V, these transistors exhibit hysteresis behavior similar to the reported behavior of fully depleted SOI-MOSFETs. Our results also show a gate voltage controlled turn-off of the drain current when the transistor is operating in the hysteresis mode. We have analyzed this behavior in vertical n-MOSFETs using 2-D device simulation and our results show a threshold value for the hole concentration across the source-channel junction which is required for the forward biasing of this junction. For a transistor operating in the hysteresis mode, we show that the potential barrier height for electron injection across the source-channel junction increases for increasing negative gate voltages during retrace. This results in a gate controlled turn-off of the drain current for SOI and vertical n-MOSFETs operating in the regenerative mode     

Synthesis and electrochemical studies of the 4 V cathode, Li(Ni2/3Mn1/3)O2

Layered Li(Ni_2/3Mn_1/3)O₂ compounds are prepared by freeze-drying, mixed carbonate and molten salt methods at high temperature. The phases are characterized by X-ray diffraction, Rietveld refinement, and other methods. Electrochemical properties are studied versus Li-metal by charge–discharge cycling and cyclic voltammetry (CV). The compound prepared by the carbonate route shows a stable capacity of 145 (±3) mAh g⁻¹ up to 100 cycles in the range 2.5–4.3 V at 22 mA g⁻¹. In the range 2.5–4.4 V at 22 mA g⁻¹, the compound prepared by molten salt method has a stable capacity of 135 (±3) mAh g⁻¹ up to 50 cycles and retains 96% of this value after 100 cycles. Capacity-fading is observed in all the compounds when cycled in the range 2.5–4.5 V. All the compounds display a clear redox process at 3.65–4.0 V that corresponds to the Ni^2+/3+–Ni^3+/4+ couple.     

Solar cookers—part-II—cooking vessel with central annular cavity

Cooking vessels used in a solar cooker must be able to transfer the heat trapped in the cooker effectively to the food material. In the preceding paper (Part-I) the advantage of keeping the vessel on lugs was discussed. In the current paper the performance of a cooking vessel with a central annular cavity kept on lugs is discussed. The experiments were conducted for several days using water and thermic fluid as working medium. The studies indicated that the cooking vessel with central annular cavity on lugs performs much better than the conventional vessel kept on the floor of the cooker. The conventional vessel is considered to be the benchmark for the purposes of comparison.