The impact of semiconductor technology scaling on CMOS RF and digital circuits for wireless application

The impact of CMOS technology scaling on the various radio frequency (RF) circuit components such as active, passive and digital circuits is presented. Firstly, the impact of technology scaling on the noise and linearity of the low-noise amplifier (LNA) is thoroughly analyzed. Then two new circuits, i.e., CMOS complementary parallel push-pull (CCPP) circuit and vertical-NPN (V-NPN) circuit for direct-conversion receiver (DCR), are introduced. In CCPP, the high RF performance of pMOS comparable to nMOS provides single ended differential RF signal processing capability without the use of a bulky balun. The use of parasitic V-NPN bipolar transistor, available in triple well CMOS technology, has shown to provide more than an order of magnitude improvement in 1/f noise and dc offset related problems, which have been the bottleneck for CMOS single chip integration. Then CMOS technology scaling for various passive device performances such as the inductor, varactor, MIM capacitor, and switched capacitor, is discussed. Both the forward scaling of the active devices and the inverse scaling of interconnection layer, i.e., more interconnection layers with effectively thicker total dielectric and metal layers, provide very favorable scenario for all passive devices. Finally, the impact of CMOS scaling on the various digital circuits is introduced, taking the digital modem blocks, the various digital calibration circuits, the switching RF power amplifier, and eventually the software defined radio, as examples.     

Magnetic susceptibility of Bi<Subscript>2</Subscript>Te<Subscript>3</Subscript>-Sb<Subscript>2</Subscript>Te<Subscript>3</Subscript> alloys

The magnetic susceptibility of Czochralski-grown single crystals of Bi₂Te₃-Sb₂Te₃ alloys containing 0, 10, 25, 40, 50, 60, 65, 70, 80, 90, 99.5, or 100 mol % Sb₂Te₃ has been investigated. The magnetic susceptibility of these crystals was determined at the temperature T = 291 K and the magnetic field H oriented parallel (χ_‖) and perpendicularly (χ_⊥) to the trigonal crystallographic axis C ₃. A complicated concentration dependence of the anisotropy of magnetic susceptibility χ_‖/χ_⊥ has been revealed. The crystals with the free carrier concentration p ≈ 5 × 10¹⁹ cm^?3 do not exhibit anisotropy of magnetic susceptibility. The transition to the isotropic magnetic state occurs for the compositions characterized by a significantly increased (from 200 to 300 meV) optical bandgap.     

Wearable Force Touch Sensor Array Using a Flexible and Transparent Electrode

Transparent electrodes have been widely used for various electronics and optoelectronics, including flexible ones. Many nanomaterial‐based electrodes, in particular 1D and 2D nanomaterials, have been proposed as next‐generation transparent and flexible electrodes. However, their transparency, conductivity, large‐area uniformity, and sometimes cost are not yet sufficient to replace indium tin oxide (ITO). Furthermore, the conventional ITO is quite rigid and susceptible to mechanical fractures under deformations (e.g., bending, folding). In this study, the authors report new advances in the design, fabrication, and integration of wearable and transparent force touch (touch and pressure) sensors by exploiting the previous efforts in stretchable electronics as well as novel ideas in the transparent and flexible electrode. The optical and mechanical experiment, along with simulation results, exhibit the excellent transparency, conductivity, uniformity, and flexibility of the proposed epoxy‐copper‐ITO (ECI) multilayer electrode. By using this multi‐layered ECI electrode, the authors present a wearable and transparent force touch sensor array, which is multiplexed by Si nanomembrane p‐i‐n junction‐type (PIN) diodes and integrated on the skin‐mounted quantum dot light‐emitting diodes. This novel integrated system is successfully applied as a wearable human–machine interface (HMI) to control a drone wirelessly. These advances in novel material structures and system‐level integration strategies create new opportunities in wearable smart displays.     

An Analysis of Citation Counts of ETRI‐Invented US Patents

From its foundation until 2004, ETRI has registered over 1,000 US patents. This letter analyzes the characteristics of these patents and addresses the explanatory factors affecting their citation counts. For explanatory variables, research team related variables, invention specific variables, and geographical domain related variables are suggested. Zero‐altered count data models are used to test the impact of independent variables. A key finding is that technological cumulativeness, the scale of invention, outputs in the electronic field, and the degree of dependence on the US technology domain positively affect the citation counts of ETRI‐invented US patents. The magnitude of international presence appears to negatively affect the citation counts of ETRI‐invented US patents.     

Intratumoral Thermal Reading During Photo‐Thermal Therapy by Multifunctional Fluorescent Nanoparticles

The tremendous development of nanotechnology is bringing us closer to the dream of clinical application of nanoparticles in photothermal therapies of tumors. This requires the use of specific nanoparticles that must be highly biocompatible, efficient light‐to‐heat converters and fluorescent markers. Temperature reading by the heating nanoparticles during therapy appears of paramount importance to keep at a minimum the collateral damage that could arise from undesirable excessive heating. In this work, this thermally controlled therapy is possible by using Nd³⁺ ion‐doped LaF₃ nanocrystals. Because of the particular optical features of Nd³⁺ ions at high doping concentrations, these nanoparticles are capable of in vivo photothermal heating, fluorescent tumor localization and intratumoral thermal sensing. The successful photothermal therapy experiments here presented highlight the importance of controlling therapy parameters based on intratumoral temperature measurements instead of on the traditionally used skin temperature measurements. In fact, significant differences between intratumoral and skin temperatures do exist and could lead to the appearance of excessive collateral damage. These results open a new avenue for the real application of nano­particle‐based photothermal therapy at clinical level.     

Better Security for Deterministic Public-Key Encryption: The Auxiliary-Input Setting

Deterministic public-key encryption, introduced by Bellare, Boldyreva, and O’Neill (CRYPTO ’07), provides an alternative to randomized public-key encryption in various scenarios where the latter exhibits inherent drawbacks. A deterministic encryption algorithm, however, cannot satisfy any meaningful notion of security when the plaintext is distributed over a small set. Bellare et al. addressed this difficulty by requiring semantic security to hold only when the plaintext has high min-entropy from the adversary’s point of view. In many applications, however, an adversary may obtain auxiliary information that is related to the plaintext. Specifically, when deterministic encryption is used as a building block of a larger system, it is rather likely that plaintexts do not have high min-entropy from the adversary’s point of view. In such cases, the framework of Bellare et al. might fall short from providing robust security guarantees. We formalize a framework for studying the security of deterministic public-key encryption schemes with respect to auxiliary inputs. Given the trivial requirement that the plaintext should not be efficiently recoverable from the auxiliary input, we focus on hard-to-invert auxiliary inputs. Within this framework, we propose two schemes: the first is based on the d-linear assumption for any d≥1 (including, in particular, the decisional Diffie–Hellman assumption), and the second is based on a rather general class of subgroup indistinguishability assumptions (including, in particular, the quadratic residuosity assumption and Paillier’s composite residuosity assumption). Our schemes are secure with respect to any auxiliary input that is subexponentially hard to invert (assuming the standard hardness of the underlying computational assumptions). In addition, our first scheme is secure even in the multi-user setting where related plaintexts may be encrypted under multiple public keys. Constructing a scheme that is secure in the multi-user setting (even without considering auxiliary inputs) was identified by Bellare et al. as an important open problem.     

Uplink Channel Estimation for Multi-user OFDM-based Systems

In this paper we propose a simple, yet flexible and efficient, channel estimator for the uplink in broadband orthogonal frequency division multiplexing (OFDM) systems. The processing is performed in the time-domain, by extracting the Channel’s Impulse Response (CIR) for each user from a joint training signal. In this OFDM system, the pilot sequence we advocate, where all users share the same pilot sub-carriers, consists of one OFDM-symbol endowed with time-shifted properties per user, which isolates each user’s CIR and is robust against multi-user interference. The feasibility of our approach is substantiated by system simulation results obtained using BRAN-A broadband mobile wireless channel model.

High Areal Capacitance of N‐Doped Graphene Synthesized by Arc Discharge

The lack of cost effective, industrial‐scale production methods hinders the widespread applications of graphene materials. In spite of its applicability in the mass production of graphene flakes, arc discharge has not received considerable attention because of its inability to control the synthesis and heteroatom doping. In this study, a facile approach is proposed for improving doping efficiency in N‐doped graphene synthesis through arc discharge by utilizing anodic carbon fillers. Compared to the N‐doped graphene (1–1.5% N) synthesized via the arc process according to previous literature, the resulting graphene flakes show a remarkably increased doping level (≈3.5% N) with noticeable graphitic N enrichment, which is rarely achieved by the conventional process, while simultaneously retaining high turbostratic crystallinity. The electrolyte ion storage of synthesized materials is examined in which synthesized N‐doped graphene material exhibits a remarkable area normalized capacitance of 63 µF cm^?2. The surprisingly high areal capacitance, which is superior to that of most carbon materials, is attributed to the synergistic effect of extrinsic pseudocapacitance, high crystallinity, and abundance of exposed graphene edges. These results highlight the great potentials of N‐doped graphene flakes produced by arc discharge in graphene‐based supercapacitors, along with well‐studied active exfoliated graphene and reduced graphene oxide.