A visible-light and infrared video database for performance evaluation of video/image fusion methods

Multidimensional Systems and Signal Processing - In general, the fusion of visible-light and infrared images produces a composite representation where both data are pictured in a single image. The...     

Thermodiffusion‐Assisted Pyroelectrics—Enabling Rapid and Stable Heat and Radiation Sensing

Sensors for monitoring temperature, heat flux, and thermal radiation are essential for applications such as electronic skin. While pyroelectric and thermoelectric effects are suitable candidates as functional elements in such devices, both concepts show individual drawbacks in terms of zero equilibrium signals for pyroelectric materials and small or slow response of thermoelectric materials. Here, these drawbacks are overcome by introducing the concept of thermodiffusion‐assisted pyroelectrics, which combines and enhances the performance of pyroelectric and ionic thermoelectric materials. The presented integrated concept provides both rapid initial response upon heating and stable synergistically enhanced signals upon prolonged exposure to heat stimuli. Likewise, incorporation of plasmonic metasurfaces enables the concept to provide both rapid and stable signals for radiation‐induced heating. The performance of the concept and its working mechanism can be explained by ion–electron interactions at the interface between the pyroelectric and ionic thermoelectric materials.     

Oscillation of the scattering time in a 2D electron system with oval antidots

Electron scattering by a single barrier is predicted to reveal singularities as the magnetic field is changed, because the number of electron collisions with the barrier dramatically increases as chaotic orbits around the barrier are changed into periodic orbits. To test this experimentally we have measured the magnetoresistance of AlGaAs/GaAs heterostructures with a two-dimensional electron gas and a lateral lattice containing a macroscopic number of oval-shaped antidots fabricated using electron lithography. Reproducible fluctuations in the magnetoresistance are observed at low field, which are due to the oscillations of the number of electron collisions with the antidots. The number of collisions N before the electron escapes from the antidot has been calculated as a function of B in an electric field. The position of the maxima in N(B) obtained from calculations and experiment are in reasonable agreement.     

Distribution of heat sources in vertical open channels with natural convection

In this paper we use the constructal method to determine the optimal distribution and sizes of discrete heat sources in a vertical open channel cooled by natural convection. Two classes of geometries are considered: (i) heat sources with fixed size and fixed heat flux, and (ii) single heat source with variable size and fixed total heat current. In both classes, the objective is the maximization of the global thermal conductance between the discretely heated wall and the cold fluid. This objective is equivalent to minimizing temperature of the hot spot that occurs at a point on the wall. The numerical results show that for low Rayleigh numbers (∼10²), the heat sources select as optimal location the inlet plane of the channel. For configuration (i), the optimal location changes as the Rayleigh number increases, and the last (downstream) heat source tends to migrate toward the exit plane, which results in a non-uniform distribution of heat sources on the wall. For configuration (ii) we also show that at low and moderate Rayleigh numbers (Ra_M ∼ 10² and 10³) the thermal performance is maximized when the heat source does not cover the entire wall. As the flow intensity increases, the optimal heat source size approaches the height of the wall. The importance to free the flow geometry to morph toward the configuration of minimal global resistance (maximal flow access) is also discussed.     

Tokens vs. Signals: On Conformance between Formal Models of Dataflow and Hardware

Designing hardware often involves several types of modeling and analysis, e.g., in order to check system correctness, to derive performance properties such as throughput, to optimize resource usages (e.g., buffer sizes), and to synthesize parts of a circuit (e.g., control logic). Working directly with low-level hardware models such as finite-state machines (FSMs) to answer such questions is often infeasible, e.g., due to state explosion. Instead, designers often use dataflow models such as SDF and CSDF, which are more abstract than FSMs, and less expensive to use since they come with more efficient analysis algorithms. However, dataflow models are only abstractions of the real hardware, and often omit critical information. This raises the question, when can one say that a certain dataflow model faithfully captures a given piece of hardware? The question is of more than simply academic interest. Indeed, as illustrated in this paper, dataflow-based analysis outcomes may sometimes be defensive (e.g., buffers that are too big) or even incorrect (e.g., buffers that are too small). To answer the question of faithfully capturing hardware using dataflow models, we develop a formal conformance relation between the heterogeneous formalisms of (1) finite-state machines with synchronous semantics, typically used to model synchronous hardware, and (2) asynchronous processes communicating via queues, used as a formal model for dataflow. The conformance relation preserves performance properties such as worst-case throughput and latency.     

An Improved NER Methodology to the Portuguese Language

Mobile Networks and Applications - The text mining process typically involves the application of natural language processing (NLP) techniques, in order to obtain important information and extract...     

Thermal-lens and photo-acoustic methods for the determination of SiC thermal properties

In this paper we report the use of photothermal techniques such as Thermal lens (TL) spectrometry, Photoacoustic and heat capacity, ρc_p, to determine the thermo-optical parameters, such as thermal conductivity (K), thermal diffusivity (D), specific heat (c_p) and the optical path dependence with temperature (ds/dT), of an undoped polycrystalline 3C-SiC. To our knowledge, this is the first time that Thermal lens technique is used for wide band-gap systems. Results obtained for the polycrystalline sample with TL technique indicates that ds/dT is negative at room temperature. Moreover, the obtained values of thermal diffusivity and thermal conductivity are in good agreement with that found in the literature, indicating that the phototermal techniques can be used to obtain the referred parameters in circumstances where other techniques cannot be used, for example, in harsh environments.     

D2D pervasive communication system with out-of-band control autonomous to 5G networks

Wireless Networks - D2D (device-to-device) communication is one of the developments of 5G networks (5th generation mobile networks) that reduce mobile traffic load, reduce energy consumption and...     

Molds and Resists Studies for Nanoimprint Lithography of Electrodes in Low-Voltage Polymer Thin-Film Transistors

A low-cost patterning of electrodes was investigated looking forward to replacing conventional photolithography for the processing of low-operating voltage polymeric thin-film transistors. Hard silicon, etched by sulfur hexafluoride and oxygen gas mixture, and flexible polydimethylsiloxane imprinting molds were studied through atomic force microscopy (AFM) and field emission gun scanning electron microscopy. The higher the concentration of oxygen in reactive ion etching, the lower the etch rate, sidewall angle, and surface roughness. A concentration around 30 % at 100 mTorr, 65 W and 70 sccm was demonstrated as adequate for submicrometric channels, presenting a reduced etch rate of 176 nm/min. Imprinting with positive photoresist AZ1518 was compared to negative SU-8 2002 by optical microscopy and AFM. Conformal results were obtained only with the last resist by hot embossing at 120 °C and 1 kgf/cm² for 2 min, followed by a 10 min post-baking at 100 °C. The patterning procedure was applied to define gold source and drain electrodes on oxide-covered substrates to produce bottom-gate bottom-contact transistors. Poly(3-hexylthiophene) (P3HT) devices were processed on high-κ titanium oxynitride (TiO _x N _y ) deposited by radiofrequency magnetron sputtering over indium tin oxide-covered glass to achieve low-voltage operation. Hole mobility on micrometric imprinted channels may approach amorphous silicon (～0.01 cm²/V s) and, since these devices operated at less than 5 V, they are not only suitable for electronic applications but also as sensors in aqueous media.     

Dual-band CMOS low-noise amplifier without switches and with continuously adjustable gain

A dual-band CMOS low-noise amplifier with inductor magnetic coupling and current steering is presented which avoids the use of switches in the signal path, and has the possibility of controlling the voltage gain in the two bands, without disturbing the input impedance matching.