首页 | 本学科首页   官方微博 | 高级检索  
文章检索
  按 检索   检索词:      
出版年份:   被引次数:   他引次数: 提示:输入*表示无穷大
  收费全文   418916篇
  免费   5087篇
  国内免费   1770篇
电工技术   7912篇
技术理论   2篇
综合类   535篇
化学工业   61087篇
金属工艺   17789篇
机械仪表   12450篇
建筑科学   10641篇
矿业工程   1789篇
能源动力   10681篇
轻工业   38388篇
水利工程   3928篇
石油天然气   5366篇
武器工业   27篇
无线电   50643篇
一般工业技术   79457篇
冶金工业   83274篇
原子能技术   8374篇
自动化技术   33430篇
  2021年   3064篇
  2019年   2887篇
  2018年   4690篇
  2017年   4641篇
  2016年   4981篇
  2015年   3564篇
  2014年   5937篇
  2013年   18681篇
  2012年   9863篇
  2011年   13841篇
  2010年   11151篇
  2009年   12486篇
  2008年   13127篇
  2007年   13237篇
  2006年   11841篇
  2005年   10969篇
  2004年   10500篇
  2003年   10484篇
  2002年   10139篇
  2001年   10336篇
  2000年   9707篇
  1999年   10506篇
  1998年   26341篇
  1997年   18614篇
  1996年   14498篇
  1995年   10734篇
  1994年   9613篇
  1993年   9285篇
  1992年   6853篇
  1991年   6654篇
  1990年   6104篇
  1989年   6110篇
  1988年   5908篇
  1987年   5027篇
  1986年   4909篇
  1985年   5803篇
  1984年   5288篇
  1983年   4862篇
  1982年   4421篇
  1981年   4560篇
  1980年   4278篇
  1979年   4177篇
  1978年   4167篇
  1977年   4949篇
  1976年   7054篇
  1975年   3583篇
  1974年   3410篇
  1973年   3428篇
  1972年   2795篇
  1971年   2554篇
排序方式: 共有10000条查询结果,搜索用时 28 毫秒
81.
82.
An all-optical multiplexing technique using wavelength division multiplexing (WDM)-time division multiplexing (TDM) conversion with an electroabsorption wavelength converter has been proposed and demonstrated. The effectiveness of this WDM-TDM conversion technique for various pulsewidth settings was experimentally investigated. The fluctuation of the signal performance, which was inevitably caused by the coherent crosstalk between adjacent pulses in the conventional optical time division multiplexing (OTDM) technique, were successfully suppressed, even in the case of wide pulse duration. High Q-factor performance has been maintained for a wide range of duty ration from 36% to 74%. By introducing this technique to the optical time division multiplexer, a highly stable and high-quality 40-Gb/s optical signal can be effectively produced without generating the short pulse or setting two tributaries at orthogonal polarization states, and without introducing high-speed electronics for signal multiplexing. The WDM-TDM conversion with an electroabsorption wavelength converter was extended to 60-Gb/s operation by using three 20-Gb/s tributaries. A clear eye opening was confirmed for a waveform after the WDM-TDM conversion of the 60-Gb/s signal  相似文献   
83.
An investigation into the effects of pressure (helium gas) on the isothermal fluid behavior includes: (1) the effect of pressure on the rate of melting and coking as evidenced by the rate constants k(melt) and k(coke); (2) the effect of pressure on the energies of activation of melting and coking; (3) the effects of pressure on the characteristic times; (4) the effects of pressure on the maximum isothermal fluidity. Results from the effects of pressure on k(melt) revealed that it was generally the high total sulfur, low nitrogen, low reactives/mineral matter ratio, medium rank coals which show the greatest increase in k(melt), whereas the highest rank coals show the least decrease in k(coke). The energies of activation of melting and coking were not significantly affected by pressure. The investigation also reveals increases or decreases in the respective times of softening, maximum fluidity, resolidification and total time of fluid behavior under isothermal pressurized conditions. There appears the possibility that these shifts may be rank dependent. Additionally, the lower rank coals show the largest relative increase in their fluidities when subjected to pressure. Empirical relationships were derived in order to quantitatively predict the maximum isothermal fluidity for most (fluid) coals at a given pressure.  相似文献   
84.
Pre-metal-deposition reactive ion etching (RIE) was performed on an Al0.3Ga0.7N/AlN/GaN heterostructure in order to improve the metal-to-semiconductor contact resistance. An optimum AlGaN thickness for minimizing contact resistance was determined. An initial decrease in contact resistance with etching time was explained in terms of removal of an oxide surface layer and/or by an increase in tunnelling current with the decrease of the AlGaN thickness. The presence of a dissimilar surface layer was confirmed by an initial nonuniform etch depth rate. An increase in contact resistance for deeper etches was experienced. The increase was related to depletion of the two-dimensional (2-D) electron gas (2-DEG) under the ohmics. Etch depths were measured by atomic force microscopy (AFM). The contact resistance decreased from about 0.45 Ωmm for unetched ohmics to a minimum of 0.27 Ωmm for 70 Å etched ohmics. The initial thickness of the AlGaN layer was 250 Å. The decrease in contact resistance, without excessive complications on device processing, supports RIE etching as a viable solution to improve ohmic contact resistance in AlGaN/GaN HEMTs  相似文献   
85.
86.
87.
In the development of a novel freeze-drying technique in a fluidized bed at atmospheric pressure, a parallel study was undertaken using a conventional vacuum equipment. Two kinetically distinct phases were observed during freeze drying of representative Pood samples:

(1) a period during which the rate of drying was constant and (2) a second period during which the drying rate sufferedcontinual reduction. This paper focused attention on the primary drying period which corresponded with the kinetics of sublimation of pure  相似文献   
88.
89.
90.
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号