Durable ultra-low-platinum ionomer-free anode catalyst for hydrogen proton exchange membrane fuel cell

An ultra-low-platinum catalyst based on finely dispersed platinum (Pt) deposited on a highly porous complex microporous layer was investigated as a candidate of durable anode catalyst for hydrogen oxidation reaction (HOR) in proton exchange membrane fuel cells. Etching of teflonated and nitridized base carbon substrate in oxygen plasma and simultaneous deposition of cerium oxide were applied to increase active surface area and electrochemical activity of the platinum nanocatalyst. Ultra-low loadings of Pt (between 0.85 and 8.5 μg cm⁻²) deposited by magnetron sputtering on this substrate were assembled with Nafion 212 membrane and commercially available Pt/C cathodes (300-400 μg cm⁻² Pt). Such membrane electrode assembly (MEA) with extremely low Pt content at anode can deliver high output power densities, reaching 0.95 W cm⁻² or 0.65 W cm⁻² with only 1.7 μg cm⁻² of Pt, using H₂ as fuel and pure O₂ or air as an oxidant, respectively. Although electrocatalysts with highly dispersed active metals are known to often suffer from irreversible degradation, the above MEAs proved to be very stable when the cell was subjected to a durability test under heavy duty conditions of on/off cycling. The system with lower Pt content is more prone to water flooding which can, however, be eliminated by maintaining better control over the fuel humidity. Average decay of the cell voltage less than 50 μV h⁻¹ was obtained in the cycling regime, while excellent stability <10 μV h⁻¹ is achievable under the static load of 0.4 A cm⁻².     

Infants' perception of affordances of slopes under high- and low-friction conditions.

Three experiments investigated whether 14- and 15-month-old infants use information for both friction and slant for prospective control of locomotion down slopes. In Experiment 1, high- and low-friction conditions were interleaved on a range of shallow and steep slopes. In Experiment 2, friction conditions were blocked. In Experiment 3, the low-friction surface was visually distinct from the surrounding high-friction surface. In all three experiments, infants could walk down steeper slopes in the high-friction condition than they could in the low-friction condition. Infants detected affordances for walking down slopes in the high-friction condition, but in the low-friction condition, they attempted impossibly slippery slopes and fell repeatedly. In both friction conditions, when infants paused to explore slopes, they were less likely to attempt slopes beyond their ability. Exploration was elicited by visual information for slant (Experiments 1 and 2) or by a visually distinct surface that marked the change in friction (Experiment 3). (PsycINFO Database Record (c) 2010 APA, all rights reserved)     

Chimeric MLL products with a Ras binding cytoplasmic protein AF6 involved in t(6;11) (q27;q23) leukemia localize in the nucleus

In infantile leukemias and therapy-related leukemias, the MLL gene is frequently found to be disrupted and fused to various translocation partner genes, such as AF4/FEL, LTG9/AF9 and LTG19/ENL as a result of 11q23 translocations. We previously showed that the N-terminal portion common to various chimeric MLL products, as well as to MLL-LTG9 and MLL-LTG19, localizes in the nuclei, and therefore suggested that it might play an important role in leukemogenesis. In the present study, MLL-AF6 chimeric products found in the t(6;11)(q27;q23) translocation were analysed since AF6, a Ras-binding protein, exhibits a different subcellular localization from that of LTG9/AF9 and LTG19/ENL. Immunofluorescence staining data and cell fractionation analyses demonstrated that MLL-AF6 chimeric products localize in the nuclei despite the fact that AF6 itself localizes in the cytoplasm, confirming the importance of the nuclear localization of chimeric MLL products. The region in the N-terminal portion of MLL responsible for this nuclear localization was examined and found to be a region containing AT-hook motifs.     

Methanol to hydrogen conversion on cobalt–ceria catalysts prepared by magnetron sputtering

Methanol oxidation catalyzed by bi-layered or mixed oxides of cobalt and cerium was studied at atmospheric pressure by temperature-programmed reaction technique. The catalysts were deposited in the form of thin films by magnetron sputtering from Co and CeO₂ targets, forming double layer structures of CeO₂/CoO_x or CoO_x/CeO₂. Reaction selectivity and hydrogen production rates were monitored at O₂:CH₃OH reactant stoichiometries varied in the range 4:1–1:4, spanning from oxygen rich to oxygen lean reaction conditions. A complementary information in regard to thermal stability of the catalytic layers was obtained by X-ray photoelectron spectroscopy. A strong synergistic interaction between cerium and cobalt within the mixed oxide (driving dynamics of the Co²⁺/Co³⁺ and Ce⁴⁺/Ce³⁺ redox pairs and oxygen exchange) leads to a bi-functional catalyst. Particularly the CeO₂/CoO_x configuration proved to be significantly more active than the CoO_x alone and more stable, especially under reducing environments. Further optimization of reactivity can be provided via control of the adlayer coverage.     

High voltage degradation of GaN High Electron Mobility Transistors on silicon substrate

We have electrically stressed GaN High Electron Mobility Transistors on Si substrate at high voltages. We observe a pattern of device degradation that differs markedly from previous reports in GaN-on-SiC HEMTs. Similarly to these devices, the gate leakage current of GaN-on-Si HEMTs increases by several orders of magnitude at a certain critical voltage and this increase is irreversible. However, in contrast with devices on SiC, the critical voltage varies substantially across the wafer, even over short distances, with values as high as 75 V being observed. In addition, for voltages below the critical voltage, we observe a prominent degradation in the drain current and the source and drain resistances, something not observed in devices on SiC. This degradation is almost completely recoverable under UV illumination. We attribute these results to the high mismatch that exists between GaN and Si that leads to a large concentration of electrically active traps and a lower and non-uniform initial strain in the AlGaN barrier. This is evidenced by observed correlations between threshold voltage and maximum drain current in fresh devices and their corresponding critical voltages.     

Multifunctional polyimide/graphene oxide composites via in situ polymerization

In this article, we detail an effective way to improve electrical, thermal, and gas barrier properties using a simple processing method for polymer composites. Graphene oxide (GO) prepared with graphite using a modified Hummers method was used as a nanofiller for r‐GO/PI composites by in situ polymerization. PI composites with different loadings of GO were prepared by the thermal imidization of polyamic acid (PAA)/GO. This method greatly improved the electrical properties of the r‐GO/PI composites compared with pure PI due to the electrical percolation networks of reduced graphene oxide within the films. The conductivity of r‐GO/PI composites (30:70 w/w) equaled 1.1 × 10¹ S m^?1, roughly 10¹⁴ times that of pure PI and the oxygen transmission rate (OTR, 30:70 w/w) was reduced by about 93%. The Young's modulus of the r‐GO/PI composite film containing 30 wt % GO increased to 4.2 GPa, which was an approximate improvement of 282% compared with pure PI film. The corresponding strength and the elongation at break decreased to 70.0 MPa and 2.2%, respectively. © 2013 Wiley Periodicals, Inc. J. Appl. Polym. Sci. 2014 , 131, 40177.