A 2-V, 1-10 GHz BiCMOS transceiver chip for multimode wirelesscommunications networks

This paper concerns the design consideration, fabrication process, and performance results for an ultra-broadband, low-voltage, low-power, BiCMOS-based transceiver chip for cellular-satellite-LAN wireless communication networks. The transceiver chip incorporates an RF amplifier, a Gilbert down-mixer, and an IF amplifier in the receive path, and an IF amplifier, a Gilbert up-mixer, and an RF amplifier in the transmit path. For an RF frequency in the 1-10 GHz band and an IF frequency in the 100-1000 MHz band, the developed transceiver chip consumes less than 60 mW at 2 V, to yield a downconversion gain of 40 dB at 1 GHz and 10 dB at 10 GHz and an upconversion gain of 42 dB at 1 GHz and 11 dB at 10 GHz. To avoid possible start-up problems caused during “stand-by” to “enable” mode transition, a simple switching technique is employed for enabling either the receive or the transmit path, by changing the value of a reference voltage applied to both the down- and the up-mixers. While the developed transceiver chip exhibits the best performance for a dc supply voltage of 2 V, it shows a graceful degradation for a ±0.15 V voltage deviation. The transceiver's chip size is 1.04 mm×1.04 mm     

Brominated and organophosphate flame retardants in selected consumer products on the Japanese market in 2008

The concentrations of traditional brominated flame retardants (BFRs) and organophosphate flame retardants (OPFRs) in new consumer products, including electronic equipment, curtains, wallpaper, and building materials, on the Japanese market in 2008 were investigated. Although some components of the electronic equipment contained bromine at concentrations on the order of percent by weight, as indicated by X-ray fluorescence analysis, the bromine content could not be fully accounted for by the BFRs analyzed in this study, which included polybrominated diphenylethers, decabromodiphenyl ethane, tetrabromobisphenol A, polybromophenols, and hexabromocyclododecanes. These results suggest the use of alternative BFRs such as newly developed formulations derived from tribromophenol, tetrabromobisphenol A, or both. Among the 11 OPFRs analyzed, triphenylphosphate was present at the highest concentrations in all the products investigated, which suggests the use of condensed-type OPFRs as alternative flame retardants, because they contain triphenylphosphate as an impurity. Tripropylphosphate was not detected in any samples; and trimethylphosphate, tributyl tris(2-butoxyethyl)phosphate, and tris(1,3-dichloro-2-propyl)phosphate were detected in only some components and at low concentrations. Note that all the consumer products evaluated in this study also contained traditional BFRs in amounts that were inadequate to impart flame retardancy, which implies the incorporation of recycled plastic materials containing BFRs that are of global concern.     

Self-aligned locally diffused emitter (SALDE) silicon solar cell

This paper presents, for the first time, a low-cost, high-throughput manufacturing approach for fabricating n-base dendritic web silicon solar cells with selectively doped emitters and self-aligned aluminum contacts using rapid thermal processing (RTP) and screen printing. The self-aligned locally diffused emitter (SALDE) structure is p⁺ nn⁺⁺ where aluminum is screen-printed on a boron-doped emitter and fired in a belt furnace to form a deep self-doped p⁺-layer and a self-aligned positive contact to the emitter according to the well-known aluminum-silicon (Al---Si) alloying process. The SALDE structure preserves the shallow emitter (20.2 μm) everywhere except directly beneath the emitter contact. There the junction depth is greater than 5 μm, as desired, in order to shield carriers in the bulk silicon from that part of the silicon surface covered by metal where the recombination rate is high. This structure is realized by using n-base (rather than p-base) substrates and by utilizing screen-printed aluminum (rather than silver) emitter contacts. Prototype dendritic web silicon (web) cells (25 cm² area) with efficiencies up to 13.2% have been produced.     

Half-data-page insertion method for increasing recording density in angular multiplexing holographic memory

We have developed a method to use a half-size data page between two full-size data pages to increase the recording density in angular multiplexing holographic memory up to 1.5× as much as the conventional angular multiplexing sequence. In our recording sequence, the full- and half-size data pages are alternately multiplexed. This is because each plane wave from various points in a data page has different angular selectivity. A half-size data page has higher angular selectivity than a full-size data page. The required angular intervals were estimated by numerical simulation taking holographic medium tilt into account. Also, an angular multiplexing experiment using the half-data-page insertion method resulted in a low bit error rate of the order of 10(-3), which is sufficient for practical use.     

Polyacene capacitors

We fabricated two types of polyacene capacitor with extremely stable polyacenic semiconductor (PAS) as the positive and negative electrodes. The first one is a coin-type PAS capacitor (six different sizes), which possesses large capacity with high reliability. Its capacity is much larger than that of the conventional electric double-layer capacitor which uses activated carbon as electrode. PAS capacitor can maintain more than 70% of the initial capacity even after 100 000 cycles. Moreover, this capacitor can be charged and discharged in a few minutes as well as at low rate. The second one is a cylinder-type PAS capacitor (diameter: 18 mm, height: 65 mm) which shows high capacity of 100 F and can discharge at the extremely high rate of 80 C. The coin-type PAS capacitor is currently used for memory back-up of electrical and communication equipment, and the cylinder-type is considered to be useful as power back-up for starting drive parts of electric equipment which needs high power density.     

X-ray absorption fine structure study on residue bromine in carbons with different degrees of graphitization

The structure of bromine residue compounds was investigated by X-ray absorption fine structure (XAFS) in order to interpret where and how bromine is present in carbons with different degrees of graphitization. The residue compounds can be classified into three groups, as obtained from X-ray absorption near edge structure (XANES) spectra and the values of the intramolecular distance r_Br–Br determined by extended X-ray absorption fine structure (EXAFS). In Group I, prepared from the host carbons heat treated at temperatures higher than 1900 °C, bromine exists in the interlayer space of graphite in the form of Br₂ molecules with interaction of the π electrons of graphite. In Group III, from carbon heat treated at 1000 °C, most of the bromine probably reacts with carbon atoms having a dangling bond or functional groups. For Group II, where the host carbons are heat treated at intermediate temperatures, it is likely that bromine exists in undeveloped defects with a unique electronic state.     

Practical Application of ±250‐kV DC‐XLPE Cable for Hokkaido–Honshu HVDC Link

The long‐term dc properties of DC‐XLPE insulation materials, which have been developed for dc use, were investigated. It was found that the lifetime of DC‐XLPE under dc voltage application is extended by the addition of nano‐sized filler. The time dependence of the space charge distribution at 50 kV/mm was observed for 7 days. Almost no accumulation of space charge in DC‐XLPE was found. The 250‐kV DC‐XLPE cables and accessories were manufactured and subjected to a type test and PQ test for use in the Hokkaido–Honshu dc link facility owned by the Electric Power Development Co., Ltd. These tests were performed under conditions that included a polarity reversal test for line commutated converter (LCC) systems as recommended in CIGRE TB 219. The test temperature was 90 °C. The type test and PQ test were successfully completed. The DC‐XLPE cable and accessories were installed in summer 2012 for the Hokkaido–Honshu dc link. After the installation of the dc extruded cable system, a dc high‐voltage test at 362.5 kV (=1.45 PU) for 15 min was successfully completed in accordance with CIGRE TB 219. This dc extruded cable system was put into operation in December 2012 as the world's highest‐voltage extruded dc cable in service and the world's first dc extruded cable for a LCC system including polarity reversal operation.     

Wideband and high-gain negative-feedback AGC amplifier for high-speed lightwave digital transmission systems

A negative-feedback AGC amplifier based on a new circuit configuration concept is proposed and monolithically integrated. The amplifier exhibits characteristics 2.5 times superior to those of the conventional AGC amplifier: 410 MHz bandwidth, 16 dB maximum gain and 18 dB gain dynamic range.     

Changes and results of surgical strategies for hepatocellular carcinoma: results of a 15-year study on 452 consecutive patients

In an attempt to define better surgical strategies for patients with hepatocellular carcinoma (HCC), we conducted a retrospective analysis of 452 patients who underwent hepatic resection at our institute during a period of 15 years. The patients were divided into two groups: group A, comprising 188 patients who underwent hepatic resection before 1988, and group B, comprising 264 patients after 1989. These groups were compared clinicopathologically. The percentage of patients with Child's A disease but without cirrhosis, in group A was lower. The diameter of the resected tumor was larger in group A, and major hepatic resections and curative operations were more frequently performed in group A. In group B, there was less blood loss, the specimen weighed less, and the hospital mortality was lower. Although the tumor-free survival rates were similar between the two groups, the survival rate in group B was significantly better. While even minor hepatic resection accompanied by a lower rate of surgical margin-free surgery has contributed to making hepatic resection safer, it has not improved the tumor-free survival rate. Conversely, recent advances in imaging modalities used during follow-up for the early detection of recurrence and for planning multimodality treatment have contributed to increasing the survival rate.