A wide-bandwidth low-noise InGaAsP-InAlAs superlattice avalanchephotodiode with a flip-chip structure for wavelengths of 1.3 and 1.55μm

The authors reports the fabrication of a flip-chip InGaAsP-InAlAs superlattice avalanche photodiode using gas source molecular beam epitaxy. The incident light reaches the InGaAs photoabsorption layer through the InP substrate and an InGaAsP-InAlAs superlattice multiplication region which are transparent for wavelengths of 1.55 and 1.3 μm. The light reflection by the electrode enables the absorption layer to be as thin as 0.8 μm without significantly reducing the quantum efficiency. A maximum bandwidth of 17 GHz was obtained at a low multiplication factor because the transit time through the absorption layer is reduced     

Solid-Phase Syntheses of Two Deacetyl-Thymosin β4 Analogues with Substitution at Position 12 and Their Effects on Impaired Blastogenic Response of T Lymphocytes of Uremic Patients

Two deacetyl-thymosin β₄ analogues containing Phe(4Br) or D-Phe(4Br) as position 12 were synthesized by the manual solid-phase method, and their immunological effects on the impaired blastogenic response of phytohemagglutinin-stimulated T lymphocytes of uremic patients with infectious diseases were studied. Bromination of the p-position of Phe¹² resulted in a marked restorative effect on the impaired blastogenic response of T lympocytes compared with that of our synthetic deacetyl-thymosin β₄ The synthetic [Phe(4Br)¹²]deacetyl-thymsin β₄ was approximately equal in potency to our synthetic [Phe(4F)¹²]deacetyl-thymosin β₄ in uremic patients, but the other analogue, [D-Phe(4Br)¹²]deacetyl-thymosin β₄, had no effect.     

Oxidation of Fe (II) in sulfuric acid solutions with dissolved molecular oxygen

The oxidation of Fe(II) with dissolved molecular oxygen was studied in sulfuric acid solutions containing 0.2 mol . dm^-3 FeSO₄ at temperatures ranging from 343 to 363 K. In solutions of sulfuric acid above 0.4 mol . dm^-3, the oxidation of Fe (II) was found to proceed through two parallel paths. In one path the reaction rate was proportional to both [Fe²⁺]² and po₂, exhibiting an activation energy of 51.6 . kJ mol^-1. In another path the reaction rate was proportional to [Fe²⁺]², [SO_4-], and po₂ with an activation energy of 144.6 kJ . mol^-1. A reaction mechanism in which the SO_4- ions play an important role was proposed for the oxidation of Fe(II). In dilute solutions of sulfuric acid below 0.4 mol . dm^-3, the rate of the oxidation reaction was found to be proportional to both [Fe(II)]² and Po₂, and was also affected by [H⁺] and [SO_2- ⁴]. The decrease in [H⁺] resulted in the increase of reaction rate. The discussion was further extended to the effect of Fe (III) on the oxidation reaction of Fe (II).     

Preparation of Copper-Ruby Glasses by Sputtering: The Effect of Atmosphere on the Growth of Copper Particles

Copper-ruby glasses were prepared by the sputtering method and the effect of reducing treatment was examined. The reducing was carried out either during sputtering or heat treatment. Optical absorption was related to the growth of copper particles. The results are summarized as follows: (i) the volume fraction of copper particles in the glasses which are heat-treated in air increases with the addition of hydrogen in the sputtering gas. (ii) The copper particles do not grow larger than 8 nm by heat treatment in reducing atmosphere, whereas they grow as large as 12 nm in air. (iii) Reducing during heat treatment gives a pronounced effect only when sputtering was not carried out under reducing conditions. The origin of these phenomena was also discussed, considering the mechanism of nucleation and growth of copper particles.     

An Electronic Approach to Materials Design

A molecular orbital approach to materials design has recently made great progress. This approach is based on the electronic structure calculations by the DV-Xα cluster method. In this paper recent progress in this approachis reviewed. In particular     

Preparation and properties of transparent cellulose hydrogels

Highly transparent cellulose hydrogels with physical crosslinkage were prepared from nonaqueous organic cellulose solutions and viscose by coagulating and regenerating cellulose in an aqueous solution containing a water‐miscible organic solvent. Nonaqueous organic cellulose solutions used were LiCl/dimethylacetamide, paraformaldehyde/dimethyl sulfoxide, and triethylammonium chloride/dimethyl sulfoxide. Preparation conditions and physical properties of the transparent cellulose hydrogels were studied. The transparency of the cellulose hydrogels depended on the composition of the aqueous solution containing the organic solvent. Furthermore, transparent cellulose hydrogels from viscose showed high tensile strength. © 2003 Wiley Periodicals, Inc. J Appl Polym Sci 90: 3020–3025, 2003     

The oxidation properties of fourth generation single-crystal nickel-based superalloys

The fourth-generation nickel-based single-crystal superalloys, which contain large amounts of refractory metals for strengthening and platinum group metals for topologically close-packed phase prevention, show excellent high-temperature strength. However, these alloying elements seem to decrease high-temperature oxidation resistance. In this study, nickel-based superalloys with various amounts of tantalum, rhenium, and ruthenium were examined in isothermal and cyclic exposures at 1,100°C to investigate the effect on the oxide growth rate and resistance to scale spallation. Ruthenium and rhenium were found to degrade the oxidation resistance by the vaporization of their oxide. Tantalum-rich oxide in the spinel layer acts to stabilize ruthenium and rhenium oxide in the scale. The addition of hafnium and yttrium is effective in improving the oxidation resistance of ruthenium-containing nickel-based superalloys.     

A high resolution negative working resist,LMR-UV,for g- and i-line lithography

LMR-UV (“low molecular weight resist for uv lithography”), a naphthoquinone-diazide sulfonic acid ester of a novolak resin, is a negative working resist. The mechanism of insolubilization of LMR-UV is based on the facts that the naphthoquinone-diazide moiety is decomposed to indenecarboxylic acid (polar compound) by photolysis upon UV irradiation and that the irradiated resist film insolubilizes in a non-polar developer. LMR-UV reliably forms 0.6 μm lines and spaces over a reflective substrate with steps by using a g-line stepper having a 0.35 NA lens. 0.6 μm-wide aluminum patterns over topography are obtained by use of g-line exposure and reactive ion etching. By use of an i-line aligner (NA = 0.42), LMR-UV resolves 0.25 μm space patterns with overhang profiles. The profiles are due to the large absorption coefficient of 3.8 μm^?1. 0.3 μm wide aluminum patterns are formed by i-line exposure and lift-off metallization.