迭代回归法计算T型电位滴定中试液含量

本文将迭代回归法计算Ｔ型电位滴定中，叙述了其原理及数学推导，并运算了一批实验数据，结果表明，该法准确度较高，且不需空白溶液校正。     

中国公用电话业务发展值得借鉴的几个案例

随着技术和需求的不断发展,电信市场逐步走向开放,竞争更加激烈。如何抓住信息技术革命的新契机,充分掌握公话的发展方向,成为电信运营商和设备供应商的首要课题。从不同国家的公话案例得到的重要启示是:①无论是发达国家还是发展中国家,归根结底都是市场需求决定了公话的发展趋势;②作为一个运营商,首先要考虑如何优化运营成本,避免重复建设,降低总投资,缩短项目周期,同时还要引进和利用世界上最先进的技术,突破传统语音电路交换网络的限制,利用多种接入方式开展业务;③从全球来看,通信业务将从传统的话音业务逐渐向数据业务发展,运营商可以利用数字通信的优势,为广大公众用户提供个性化数字信息服务     

SiCf/SiC陶瓷复合材料的研究进展

SiCf/SiC陶瓷复合材料具有良好的力学性能、高温抗氧化性和化学稳定性，是航空航天和原子能等领域理想的新一代高温结构材料。本文概述了增强体SiCt的发展状况及存在的问题，对SiCt/SiC材料的制备工艺、界面相的研究状态、材料的损伤破坏机理和目前的应用研究进展做了综述，并分析了SiCf/SiC陶瓷复合材料的研究重点和发展前景。     

Conduction band states of transition metal (TM) high-k gate dielectrics as determined from X-ray absorption spectra

This paper uses X-ray absorption spectroscopy to study the electronic structure of the high-k gate dielectrics including TM and RE oxides. The results are applicable to TM and rare earth (RE) silicate and aluminate alloys, as well as complex oxides comprised of mixed TM/TM and TM/RE oxides. These studies identify the nature of the lowest conduction band d^* states, which define the optical band gap, E_g, and the conduction band offset energy with respect to crystalline Si, E_B. E_g and E_B scale with the atomic properties of the TM and RE atoms providing important insights for identification high-k dielectrics that meet performance targets for advanced CMOS devices.     

Preparation of Pb(Zr0.52Ti484848)O3 thin films on silicon-on-insulator substrates by excimer laser deposition combined with rapid thermal annealing

In this paper we report the fabrication of ferroelectric Pb(Zr_0.52Ti_0.48)O₃ (PZT) thin films on Si-on-Insulator (SOI) substrates with and without an electrode by pulsed excimer laser deposition combined with rapid thermal annealing. Based on the structural and interfacial characteristics analysis by X-ray diffraction (XRD), Rutherford backscattering spectroscopy (RBS), cross-sectional transmission electron microscopy (XTEM) and automatic spreading resistance measurement (ASR), the film structure and orientation were revealed to be dependent on the annealing time and annealing temperature as well as deposition temperature. From RBS spectra and XTEM observation it is shown that the PZT thin films did not interact with the top silicon layers of SOI and that the composition of the film was similar to the target. The ASR measurements showed that the electrical properties of PZT/SOI as well as PZT/Pt/SOI were abrupt, and that the electrical properties of the SOI substrates were still good after the PZT growth.     

Experiment investigations of millimeter-wave grating spectrometer

The lateral shift of focus diffracted and reflected beam and resolving power, insertion loss of a five channel grating spectrometer for 25 to 100 GHz are experimentally investigated. And some analysis for these results are also given.     

初论带状光纤缆结构设计

推导出了成叠带状光纤在松套管中余长的两个计算公式，此两公式是带状光纤缆结构设计需要用到的基本公式。此外，还对带状光纤缆结构设计作了初步讨论。