首页 | 本学科首页   官方微博 | 高级检索  
文章检索
  按 检索   检索词:      
出版年份:   被引次数:   他引次数: 提示:输入*表示无穷大
  收费全文   5631篇
  免费   417篇
  国内免费   24篇
电工技术   77篇
综合类   16篇
化学工业   1137篇
金属工艺   151篇
机械仪表   245篇
建筑科学   186篇
矿业工程   1篇
能源动力   217篇
轻工业   354篇
水利工程   36篇
石油天然气   7篇
无线电   1066篇
一般工业技术   1212篇
冶金工业   574篇
原子能技术   30篇
自动化技术   763篇
  2024年   11篇
  2023年   49篇
  2022年   88篇
  2021年   146篇
  2020年   115篇
  2019年   130篇
  2018年   179篇
  2017年   188篇
  2016年   187篇
  2015年   180篇
  2014年   234篇
  2013年   382篇
  2012年   307篇
  2011年   408篇
  2010年   310篇
  2009年   333篇
  2008年   312篇
  2007年   286篇
  2006年   249篇
  2005年   182篇
  2004年   172篇
  2003年   164篇
  2002年   161篇
  2001年   107篇
  2000年   100篇
  1999年   102篇
  1998年   195篇
  1997年   142篇
  1996年   97篇
  1995年   70篇
  1994年   66篇
  1993年   61篇
  1992年   25篇
  1991年   22篇
  1990年   22篇
  1989年   42篇
  1988年   33篇
  1987年   24篇
  1986年   38篇
  1985年   28篇
  1984年   23篇
  1983年   13篇
  1982年   9篇
  1981年   11篇
  1980年   9篇
  1979年   4篇
  1978年   7篇
  1977年   13篇
  1976年   15篇
  1973年   5篇
排序方式: 共有6072条查询结果,搜索用时 15 毫秒
81.
This paper proposes a test algorithm that can detect and diagnose all the faults occurring in dual‐port memories that can be accessed simultaneously through two ports. In this paper, we develop a new diagnosis algorithm that classifies faults in detail when they are detected while the test process is being developed. The algorithm is particularly efficient because it uses information that can be obtained by test results as well as results using an additional diagnosis pattern. The algorithm can also diagnose various fault models for dual‐port memories.  相似文献   
82.
This paper examines various aspects of SAC (Sn–3.8Ag–0.7Cu wt.%) solder and UBM interactions which may impact interconnection reliability as it scales down. With different solder joint sizes, the dissolution rate of UBM and IMC growth kinetics will be different. Solder bumps on 250, 80 and 40 μm diameter UBM pads were investigated. The effect of solder volume/pad metallization area (V/A) ratio on IMC growth and Ni dissolution was investigated during reflow soldering and solid state isothermal aging. Higher V/A ratio produced thinner and more fragmented IMC morphology in SAC solder/Ni UBM reflow soldering interfacial reaction. Lower V/A ratio produced better defined IMC layer at the Ni UBM interface. When the ratio of V/A is constant, the IMC morphology and growth trend was found to be similar. After 250 h of isothermal aging, the IMC growth rate of the different bump sizes leveled off. No degradation in shear strength was observed in these solder bump after 500 h of isothermal aging.  相似文献   
83.
The wire bondability of Au-Ni-Cu bond pads with different Au plating schemes, including electrolytic and immersion plates, are evaluated after plasma treatment. The plasma cleaning conditions, such as cleaning power and time, are optimized based on the process window and wire pull strength measurements for different bond pad temperatures. Difference in the efficiency of plasma treatment in improving the wire bondability for different Au plates is identified. The plasma-cleaned bond pads are exposed to air to evaluate the recontamination process and the corresponding degradation of wire pull strength. The changes in bond pad surface characteristics, such as surface free energy and polar functionality, with exposure time are correlated to the wire pull strength, which in turn provides practical information about the shelf life of wire bonding after plasma cleaning.  相似文献   
84.
In this paper, we present a demodulation structure suitable for a reader baseband receiver in a passive radio frequency identification (RFID) environment. In a passive RFID configuration, an undesirable DC‐offset phenomenon may appear in the baseband of the reader receiver, which can severely degrade the performance of the extraction of valid information from the received tag signal. To eliminate this DC‐offset phenomenon, the primary feature of the proposed demodulation structures for the received FM0 and Miller subcarrier signals is to reconstruct the signal corrupted by the DC‐offset phenomenon by creating peak signals from the corrupted signal. It is shown that the proposed method can successfully detect valid data, even when the received baseband signal is distorted by the DC‐offset phenomenon.  相似文献   
85.
86.
Size variations of pattern spacing as well as gradient control of the as‐formed polymeric pattern via a spatially controlled reflow process are presented. Micro‐ and nanopatterns of polymethyl methacrylate (PMMA) in the form of line‐and‐space strips are first generated by capillary force lithography (CFL), and the residual layers are removed by ashing process. Subsequently, the exposed PMMA strips underwent a controlled reflow process above the glass transition temperature (Tg) while heating single or both sides of the substrate either in parallel to the line pattern (parallel reflow) or perpendicular to the line pattern (perpendicular reflow). As a result of this controlled reflow, a linear or a parabolic profile of pattern spacing is achieved depending on the heating mode. Furthermore, multiscale gradient patterns are formed with the spacing ranging from 98 nm to 4.23 μm (a difference of two orders of magnitude) in a single patterned layer using the original micropattern of 16 μm width and 8 μm spacing. In order to explain reflow behaviors, a simple theoretical model relating the normalized pattern width to the polymer viscosity is derived based on a leveling kinetics of polymer melt. Also, gradient PMMA channels are fabricated and bonded to a glass substrate, which are used to flow a liquid inside the channels by capillarity‐driven flow.  相似文献   
87.
This paper presents three pulsewidth modulation modulators using CMOS operational transconductance amplifiers. They consist of a ramp integrator and current-tunable Schmitt triggers. Prototype circuits built using discrete components exhibited that their duty cycles are linearly controllable. Because of their simple structure, the proposed modulators can be easily fabricated in a monolithic integrated circuit.  相似文献   
88.
当您面对产生比可用电源电压更高的稳定电压任务时,可以考虑升压稳压器。虽然升压转换器在理论上能产生比其输入更高的几乎任何电压,但实际的考虑把输出限制为对其施加的电压的大约8倍。为了产生更高的电压,可考虑使用抽头电感升压拓扑结构。图1展示了某种转换器的实现,它把3V输入提高到了100Vdc。稳压器芯片的连接类似于传统升压转换器的连接,但为了达到很高的升压比,该设计使用了L1,即一个1:6匝数比的抽头电感。图2中的波形示出了输入电压、电源开关IC1输出端(5号引脚SW)的电压、整流二极管D1的阳极电压。如同任何升压电路一样,当IC1…  相似文献   
89.
The overloaded CDMA schemes exploited in direct sequence CDMA (DS-CDMA) systems are mainly to accommodate a greater number of users than the available spreading factor N. In this paper, a superposition coding CDMA (SPC-CDMA) with unequal error protection (UEP) is proposed as one of the overloaded CDMA schemes for the next generation mobile communication systems. It exploits the available power control in most base stations to adapt the transmitted power of active users in the uplink channel. In this scheme, the active users are divided into G groups and each group consists of K users. The K users share the same spreading sequence and are distinguished by different received power levels. At the receiver side, the system first performs despreading for group detection followed by multiuser receiver to estimate the K user signals in each group. It is shown through simulations that better performance are achieved compared to the conventional DS-CDMA and existing overloaded collaborative spreading CDMA (CS-CDMA) schemes, in additive white Gaussian noise (AWGN) and fading channels. Hence, the proposed scheme maximizes the system capacity K-fold compared to conventional DS-CDMA system without requiring extra spreading codes, with average signal to noise ratio (SNR) cost of only 1dB and 2 dB over AWGN and fading channels respectively at BER of 10?3. On the other hand, for the same N, K and power constraints, SPC-CDMA scheme achieves twofold increase in data rate with 0.7 and 4 dB gains over AWGN and fading channels respectively, compared with overloaded CS-CDMA scheme in the same system capacity. In addition, the proposed scheme can also attain different levels of UEP for different users?? requirements by adjusting their fractions of transmitted powers.  相似文献   
90.
As a fine‐grained power gating method for achieving greater power savings, our approach takes advantage of the finite state machine with a datapath (FSMD) characteristic which shows sequential idleness among subcircuits. In an FSMD‐based power gating, while only an active subcircuit is expected to be turned on, more subcircuits should be activated due to the power overhead. To reduce the number of missed opportunities for power savings, we deactivated some of the turned‐on subcircuits by slowing the FSMD down and predicting its behavior. Our microprocessor experiments showed that the power savings are close to the upper bound.  相似文献   
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号