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81.
Tae Hyun Fang Deuk Jae Cho Jae Weon Choi 《International Journal of Control, Automation and Systems》2013,11(4):752-760
This paper proposes an off-line optimal channel scheduling algorithm for an interconnected vehicle control system. The optimal sequence obtained through the scheduling algorithm provides a switching controller with the best switching order if the controller can access only one plant at each time slot over the shared communication medium. Interconnected systems require the string stability as well as the dynamic stability of each unit. This paper shows that integrating the simple string stable control law with the approximately optimal linear-quadratic (LQ) tracker gives the optimal channel scheduling algorithm. 相似文献
82.
Youn‐Gyoung Chang Seong‐Hee Nam Nam‐Kook Kim Yun‐Ho Kook Jinook Kim Soon‐Sung Yoo Chang‐Dong Kim In‐Byeong Kang In‐Jae Chung 《Journal of the Society for Information Display》2009,17(4):301-307
Abstract— Recently, potential breakthrough technologies for low‐cost processing of TFT‐LCDs and new process developments for flexible‐display fabrication have been widely studied. A roll‐printing process using etch‐resist material as a replacement for photolithographic patterning was investigated. The characterization of the properties of patterns formed in roll printing, a method to fabricate cliché plates for fine patterns, and the design of a new formulation for resist printing ink is reported. The pattern position accuracy, which is one of the most important issues for the successful application of printing processes in display manufacturing was studied and how it can be improved by optimizing the blanket roll structure is explained. New design rules for the layout of the thin‐film‐transistor array was derived to improve the compatibility of roll printing. As a result, a prototype 15‐in.‐XGA TFT‐LCD panel was fabricated by using printing processes to replace all the photolithographic patterning steps conventionally used. 相似文献
83.
Hyun‐Sang Park Seon‐Beom Ji Min‐Koo Han Jae‐Sic Lee Chi‐Woo Kim Kwang‐Soo Choi 《Journal of the Society for Information Display》2009,17(8):681-686
Abstract— A new digital ambient‐light sensor system is presented which employs two linear light sensors with different sensitivities and automatically adjusts the sensitivity based on the illumination condition. The adaptation mechanism allows a very wide range of light intensity to be detected, and the input dynamic range of the system is substantially improved from 22.5 to 45.1 dB. The proposed method does not require any additional precision bits for output data. Due to the small number of the output bits and the simple conversion process, the system can be easily integrated on the display panel. 相似文献
84.
Jae Kyeong Jeong Jong Han Jeong Hui Won Yang Tae Kyung Ahn Minkyu Kim Kwang Suk Kim Bon Seog Gu Hyun‐Joong Chung Jin‐Seong Park Yeon‐Gon Mo Hye Dong Kim Ho Kyoon Chung 《Journal of the Society for Information Display》2009,17(2):95-100
Abstract— A full‐color 12.1‐in.WXGA active‐matrix organic‐light‐emitting‐diode (AMOLED) display was, for the first time, demonstrated using indium‐gallium‐zinc oxide (IGZO) thin‐film transistors (TFTs) as an active‐matrix backplane. It was found that the fabricated AMOLED display did not suffer from the well‐known pixel non‐uniformity in luminance, even though the simple structure consisting of two transistors and one capacitor was adopted as the unit pixel circuit, which was attributed to the amorphous nature of IGZO semiconductors. The n‐channel a‐IGZO TFTs exhibited a field‐effect mobility of 17 cm2/V‐sec, threshold voltage of 1.1 V, on/off ratio >109, and subthreshold gate swing of 0.28 V/dec. The AMOLED display with a‐IGZO TFT array is promising for large‐sized applications such as notebook PCs and HDTVs because the a‐IGZO semiconductor can be deposited on large glass substrates (larger than Gen 7) using the conventional sputtering system. 相似文献
85.
This paper documents a study of an Au nano-dot array that was fabricated by electron beam lithography on a glass wafer. The patterns that had features of 100nm dots in diameter with a 2-mum pitch comprised a total area of 200x200mum(2). The dot-shaped Cr underlayer was open to the air after developing Poly(methyl methacrylate) (PMMA). When dipped into the Cr etchant, the exposed Cr layer was eliminated from the glass wafer in a short period of time. In order to ultimately fabricate the Ti/Au dot arrays, Ti and Au were deposited onto the arrays with a thickness of 2 and 40nm, respectively. The lift-off procedure was carried out in the Cr etchant using sonication in order to completely remove the residual Cr/PMMA layer. The fabricated Au nano-dot array was then immersed in an Ag enhancing solution and then into an ethanol solution containing (N-(6-(Biotinamido)hexyl)-3'-(2'-pyridyldithio)-propionamide (Biotin-HPDP). The substrate was analyzed using a correlated atomic force microscopy (AFM) and confocal Raman spectroscopy. Through this procedure, position-dependent surface-enhanced Raman spectroscopy (SERS) signals could be obtained. 相似文献
86.
Hwan Seong Moon Jae Suk Lee Sung Wook Han Jong Wan Park Jae Hak Lee Seung Kee Yang Hyung Ho Park 《Journal of Materials Science》1994,29(6):1545-1548
Tantalum oxide film formation by plasma-enhanced chemical vapour deposition (PECVD) using TaCl5 as a source material was examined. The effects of deposition temperature on the formation, structure and electric properties of the Ta2O5 film were investigated for Al/Ta2O5/ p-Si (MTS) capacitors. The deposition rate and refractive index increased with increasing deposition temperature. It was found that the structure of Ta2O5 deposited by PECVD was amorphous as-deposited. However, crystalline -Ta2O5 of hexagonal structure was formed by a 700 °C, 1 h heat treatment in argon. Capacitance and relative dielectric constant of the PECVD Ta2O5 were found to be 2.54 fF m–2 and 23.5, respectively. The PECVD films obtained in this study have higher dielectric constants and remarkably better general film characteristics than those obtained by other deposition methods. 相似文献
87.
Engineering Transition Metal Layers for Long Lasting Anionic Redox in Layered Sodium Manganese Oxide
Natalia Voronina Jun Ho Yu Hee Jae Kim Najma Yaqoob Olivier Guillon Hyungsub Kim Min-Gi Jung Hun-Gi Jung Koji Yazawa Hitoshi Yashiro Payam Kaghazchi Seung-Taek Myung 《Advanced functional materials》2023,33(5):2210423
Oxygen-redox-based-layered cathode materials are of great importance in realizing high-energy-density sodium-ion batteries (SIBs) that can satisfy the demands of next-generation energy storage technologies. However, Mn-based-layered materials (P2-type Na-poor Nay[AxMn1−x]O2, where A = alkali ions) still suffer from poor reversibility during oxygen-redox reactions and low conductivity. In this work, the dual Li and Co replacement is investigated in P2-type-layered NaxMnO2. Experimentally and theoretically, it is demonstrated that the efficacy of the dual Li and Co replacement in Na0.6[Li0.15Co0.15Mn0.7]O2 is that it improves the structural and cycling stability despite the reversible Li migration from the transition metal layer during de-/sodiation. Operando X-ray diffraction and ex situ neutron diffraction analysis prove that the material maintains a P2-type structure during the entire range of Na+ extraction and insertion with a small volume change of ≈4.3%. In Na0.6[Li0.15Co0.15Mn0.7]O2, the reversible electrochemical activity of Co3+/Co4+, Mn3+/Mn4+, and O2-/(O2)n- redox is identified as a reliable mechanism for the remarkable stable electrochemical performance. From a broader perspective, this study highlights a possible design roadmap for developing cathode materials with optimized cationic and anionic activities and excellent structural stabilities for SIBs. 相似文献
88.
We propose short packet communication in an underlay cognitive radio network assisted by an intelligent reflecting surface (IRS) composed of multiple reconfigurable reflectors. This scheme, called the IRS protocol, operates in only one time slot (TS) using the IRS. The IRS adjusts its phases to give zero received cumulative phase at the secondary destination, thereby enhancing the end-to-end signal-to-noise ratio. The transmitting power of the secondary source is optimized to simultaneously satisfy the multi-interference constraints, hardware limitations, and performance improvement. Simulation and analysis results of the average block error rates (BLERs) show that the performance can be enhanced by installing more reconfigurable reflectors, increasing the blocklength, lowering the number of required primary receivers, or sending fewer information bits. Moreover, the proposed IRS protocol always outperforms underlay relaying protocols using two TSs for data transmission, and achieves the best average BLER at identical transmission distances between the secondary source and secondary destination. The theoretical analyses are confirmed by Monte Carlo simulations. 相似文献
89.
A Novel and Facile Route to Synthesize Atomic‐Layered MoS2 Film for Large‐Area Electronics 下载免费PDF全文
Stephen Boandoh Soo Ho Choi Ji‐Hoon Park So Young Park Seungho Bang Mun Seok Jeong Joo Song Lee Hyeong Jin Kim Woochul Yang Jae‐Young Choi Soo Min Kim Ki Kang Kim 《Small (Weinheim an der Bergstrasse, Germany)》2017,13(39)
High‐quality and large‐area molybdenum disulfide (MoS2) thin film is highly desirable for applications in large‐area electronics. However, there remains a challenge in attaining MoS2 film of reasonable crystallinity due to the absence of appropriate choice and control of precursors, as well as choice of suitable growth substrates. Herein, a novel and facile route is reported for synthesizing few‐layered MoS2 film with new precursors via chemical vapor deposition. Prior to growth, an aqueous solution of sodium molybdate as the molybdenum precursor is spun onto the growth substrate and dimethyl disulfide as the liquid sulfur precursor is supplied with a bubbling system during growth. To supplement the limiting effect of Mo (sodium molybdate), a supplementary Mo is supplied by dissolving molybdenum hexacarbonyl (Mo(CO)6) in the liquid sulfur precursor delivered by the bubbler. By precisely controlling the amounts of precursors and hydrogen flow, full coverage of MoS2 film is readily achievable in 20 min. Large‐area MoS2 field effect transistors (FETs) fabricated with a conventional photolithography have a carrier mobility as high as 18.9 cm2 V?1 s?1, which is the highest reported for bottom‐gated MoS2‐FETs fabricated via photolithography with an on/off ratio of ≈105 at room temperature. 相似文献
90.
Solar Cells: Multidimensional Anodized Titanium Foam Photoelectrode for Efficient Utilization of Photons in Mesoscopic Solar Cells (Small 34/2017) 下载免费PDF全文