地理信息系统在石油天然气长输管道中的应用

地理信息系统是利用现代计算机图形和数据库技术来处理地理空间及其相关数据的计算机系统,是融地理学、测量学、几何学、计算机科学和应用对象为一体的综合性高新技术。在石油天然气管道的管理向现代化、科学化和智能化方向发展的过程中,地理信息系统是有利的辅助手段之一。文章对地理信息系统发展、基本功能要求、建设内容及其在石油天然气管道中的应用进行了论述。     

Measurement and numerical simulation of three‐dimensional fiber orientation states in injection‐molded short‐fiber‐reinforced plastics

To determine three‐dimensional fiber orientation states in injection‐molded short‐fiber composites, a confocal laser scanning microscope (CLSM) is used. Since the CLSM optically sections the specimen, more than two images of the cross sections on and below the surface of the composite can be obtained. Three‐dimensional fiber orientation states can be determined by using geometric parameters of fiber images obtained from two parallel cross sections. For experiments, carbon‐fiber‐reinforced polystyrene is examined by the CLSM and geometric parameters of fibers on each cross‐sectional plane are measured by an image analysis. In order to describe fiber orientation states compactly, orientation tensors are determined at different positions of the prepared specimen. Three‐dimensional orientation states are obtained without any difficulty by determining the out‐of‐plane angles utilizing fiber images on two parallel planes acquired by the CLSM. Orientation states are different at different positions and show the shell–core structure along the thickness of the specimen. Fiber orientation tensors are predicted by a numerical analysis and the numerically predicted orientation states show good agreement with measured ones. However, some differences are found at the end of cavity. They may result from the fountain flow effects, which are not considered in the numerical analysis. © 2003 Wiley Periodicals, Inc. J Appl Polym Sci 88: 500–509, 2003     

600 A IGBT开关电路及其散热系统设计

采用IGBT开关电路，对大功率电阻带进行直流脉宽调制控制，实现了内燃机车大功率直流发电机负载实验中的负载大小的连续调节。为了避免在实验过程中IGBT器件的温度过高，采用独特的双管IGBT结构和双向强迫风冷的散热系统。实验表明该电路运行稳定、可靠。     

Abnormal junction profile of silicided p+/n shallowjunctions: a leakage mechanism

The leakage mechanism in p⁺/n shallow junctions fabricated using Co silicidation and shallow trench isolation processes has been investigated using transmission electron microscopy (TEM) combined with selective chemical etching. TEM and TSUPREM-4 simulation results show that dopant profiles bend upward near the edge of the active region. The formation of the abnormal profile is attributed to transient enhanced diffusion induced by source/drain implantation. Based on the TEM and simulation results, it is suggested that the shallower junctions formed near the active edge can serve as a source for leakage current in the silicided p+ /n shallow junctions     

Quantitative analysis of ephedrines in urine by HPLC

Simultaneous determination of six ephedrines in urine sample has been achieved by high performance liquid chromatography on a Lichrospher RP-18 column, using methylamphetamine as internal standard. The 6 ephedrines are well separated in 25 minutes with resolution better than 1.8. This method has high recovery, selectivity and reproducibility, and the linearity is satisfactory from 1.5 micrograms/ml to 25 micrograms/ml with correlation coefficients better than 0.999.     

具有阻力特性材料的σ_f－σ关系及一种新的阻力曲线测定方法

通过对相变增韧陶瓷及一种可切削玻璃－陶瓷动态疲劳（恒应力速率）试验中高应力速率区断裂应力下降现象的理论分析，发现这种现象与材料的阻力特性（Ｒ－ｃｕｒｖｅ）密切相关。确立的σ_ｆ－σ理论关系能够很好地描述整个应力速率区间内的动态疲劳试验结果。高应力速率区σ_ｆ－σ在双对数坐标下为负斜率直线，直线斜率为（ｍ为阻力曲线ＫＲ＝ｋ（△ａ）~ｍ的指数），断裂主要由材料阻力行为控制；低应力速率区，σ_ｆ－σ在双对数坐标下为正斜率直线，直线斜率为　（ｎ为应力腐蚀指数），断裂主要由材料应力腐蚀行为控制。建立了测定材料阻力特性的一种新方法，分别用这种方法及压痕／弯曲方法对一种可切削玻璃－陶瓷的阻力特性进行了实验测定，两种方法所得结果有很好的一致性。     

生物包粒的分类与命名——兼论徐州大北望中下寒武统生物包粒特征

对于碳酸盐岩中由生物及生物化学作用形成的具有同心或放射结构的异化颗粒(生物包粒),已为人们所熟悉,但目前还没有统一的分类与命名。本文在研究徐州大北望中下寒武统生物包粒特征的基础上,结合已有研究成果,对由生物及生物化学作用形成的具有同心或放射状内部结构的碳酸盐颗粒,按其粒度和形成颗粒的生物类型不同进行分类命名,提出分类命名的原则。     

新型低压抽屉式开关柜在冶金系统的应用

介绍新型低压抽屉式开关柜的结构性能和特点，并与早期低压柜作了比较。阐述了新型低压抽屉式开关柜在冶金系统应用中的几点改进情况。     

C-t analysis of MOS capacitors under constant current stress

The effect of high oxide field stress is studied using capacitance-time (C-t) measurements of MOS capacitors. The stress results in parallel shifts of the C-t curve along the time axis. The flatband voltage shift ΔV_FB obtained from the initial deep depletion capacitance C(t=0⁺) follows the same trend as that from the high-frequency C-V characteristics. However, the discrepancy between the two flatband voltages becomes larger as the stress increases due to the effect of interface charges on C-t characteristics. The flatband voltage difference is converted to interface trap density, showing a steady increase of interface trap density with stress, similar to that from low-frequency C-V measurements