On the elemental effect of AlCoCrCuFeNi high-entropy alloy system

The AlCoCrCuFeNi high-entropy alloy system was synthesized using a well-developed arc melting and casting method. Their elemental effect on microstructures and hardness was investigated with X-ray diffraction, scanning electron microscopy and Vickers hardness testing. The alloys exhibit quite simple FCC and BCC solid solution phases. Co, Cu and Ni elements enhance the formation of the FCC phase while Al and Cr enhance that of the BCC phase in the alloy system. BCC phases form a spinodal structure during cooling. Copper tends to segregate at the interdendrite region and forms a Cu-rich FCC phase. Low copper content renders the interdendrite as a thin film and the as-cast structure like recrystallized grain structure. The formation of BCC phases significantly increases the hardness level of the alloy system. The strengthening mechanism is discussed.     

Formation and Characterization of 1.5-Monolayer Self-Assembled InAs/GaAs Quantum Dots Using Postgrowth Annealing

In this paper, we report that low-density InAs/GaAs quantum dots (QDs) can be formed by postgrowth annealing the samples with 1.5-monolayer (ML) InAs coverage, which is thinner than the critical layer thickness for the Stranski-Krastanov growth. The annealing procedure was performed immediately after the deposition of the InAs layer. The effects of annealing time and annealing temperature on the dot density, dot size, and optical characteristics of the QDs were investigated. The optimum annealing conditions to obtain low-density QDs are longer than 60 s and higher than 500degC . Meanwhile, no luminescence can be observed for the wetting-layer, which may suggest that the postgrowth annealing will make the wetting layer thinner and thus reduce the effects of wetting layer on carrier relaxation and recombination. On the other hand, we observe that a decrease of the PL intensity at the annealing conditions of 60 s and 515degC , which is possibly due to the increasing surface dislocations resulted from the In adatom desorption at higher annealing temperature.     

轧钢加热炉高效运行的新模式

介绍了综合应用新型无水冷技术和热管技术的轧钢加热炉高效运行的新模式，并结合首钢第一线材厂的实践，进一步阐明了该模式的实用性和给企业带来的良好效益。     

从诸葛亮的失误谈领导者人才管理理念的更新

知识经济时代,人力资源的管理与开发成为企业在激烈的市场竞争中决定成败的关键。然而,由于受到传统文化思想潜移默化的影响和束缚,一些企业的领导者在对待人才的管理、培养和使用上存在误区,导致企业的“核心软件”即人力资源管理不能正常发挥作用。企业领导者应以史为鉴,更新人才管理理念。     

A Novel Segmentation and Feedback Model for Resolving Contention in Optical Burst Switching

A novel segmentation and feedback model (SFM) applied to resolve contention is proposed. Simulation and performance analyses show that the SFM effectively avoids contentions in optical burst switching (OBS). The long delay time of deflection routing and the immature technology of wavelength converters and optical buffers are not deployed in the SFM. The SFM does not only realize fast switching but also allows preemption by higher priority bursts.     

Design of photonic crystal fibers for dispersion-related applications

A general procedure for design of photonic crystal fibers (PCFs) with desirable dispersion properties is presented. The design model is based on the combination of a rigorous vector mode solver and a scaling transformation for the dispersion properties of the PCFs. In comparison with the conventional design method, the new design procedure is more efficient and can be readily automated for the purpose of design optimization. Several applications of the design procedure, e.g., the design optimization for dispersion shifted fibers, dispersion flattened fibers, and dispersion compensation fibers, are demonstrated and discussed.     

Mutual coupling of two collocated orthogonally oriented circular thin-wire loops

Coupling between two collocated orthogonal circular thin-wire loops is analyzed in this paper. Two coupled integral equations for the loop currents are derived and their solution in general form is found in terms of Fourier series. An analytical expression for currents induced through the mutual coupling is obtained for the case when all loop current harmonics higher than first can be ignored. It is found that strong coupling can exist for all loop current harmonics, except for the fundamental. It is also found that coupling for orthogonal collocated loop antennas depends on the relative locations of the loop terminals.     

Hermetic Packaging Using Eutectic SnPb Solder and Cr/Ni/Cu Metallurgy Layer

We have developed an easy, low-cost, and low-temperature optoelectronic hermetic packaging technology utilizing the eutectic SnPb solder and the Cr/Ni/Cu bonding pad. Bonding characteristics of the design were investigated in three different setups: silicon-silicon, silicon-glass, and glass-glass samples. Hermeticity was achieved at 200 degC without flux for all samples during the final bonding process. The bonding pads did not dewet during or after the reflow process. By utilizing the eutectic SnPb solder, the self-alignment process can be achieved. Because the bonding process was conducted through visual alignment, original misalignment was estimated to be more than 100 mum. The surface tension of melting solder during the reflow process allowed the samples to self-align and obtain a misalignment of less than 20 mum after solidification, which was 4% of the entire solder width. The bonding strength of the three setups ranged from 3 to 10 MPa. Among the three setups, glass-glass samples appear to have the strongest bonding strength. This low-temperature and cost-effective soldering process has demonstrated its feasibility and potential utilization in optoelectronic packaging     

Measurement of gain spectrum for Fabry-Perot semiconductor lasers by the Fourier transform method with a deconvolution process

To improve the accuracy of measured gain spectra, which is usually limited by the resolution of the optical spectrum analyzer (OSA), a deconvolution process based on the measured spectrum of a narrow linewidth semiconductor laser is applied in the Fourier transform method. The numerical simulation shows that practical gain spectra can be resumed by the Fourier transform method with the deconvolution process. Taking the OSA resolution to be 0.06, 0.1, and 0.2 nm, the gain-reflectivity product spectra with the difference of about 2% are obtained for a 1550-nm semiconductor laser with the cavity length of 720 /spl mu/m. The spectra obtained by the Fourier transform method without the deconvolution process and the Hakki-Paoli method are presented and compared. The simulation also shows that the Fourier transform method has less sensitivity to noise than the Hakki-Paoli method.