HEURISTIC APPROACHES FOR LOADING PROBLEMS IN FLEXIBLE MANUFACTURING SYSTEMS

Flexible manufacturing systems (FMSs) are able to process a wide variety of operations, but the specific mix of operations that can be performed at any point in time depends upon the combination of tools loaded onto the machines. The machines have tool magazines with finite capacities. We consider the problem of assigning operations and their associated tools to machines (or groups of machines) to maximize the throughput for a specified steady-state mix of orders. Since this objective is difficult to deal with directly, we use an intermediate objective of meeting workload targets for each machine group as closely as possible. A certain form of this intermediate objective has been shown to correlate highly with the original objective.

Since it is computationally intractable to find optimal solutions for problems with more than 20 operations, fast heuristic algorithms are developed. These algorithms are adapted from multi-dimensional bin-packing algorithms. Computational results are reported.     

Spatial retardation of carrier heating in scaled 0.1-μmn-MOSFET's using Monte Carlo simulations

A comprehensive Monte Carlo simulator is employed to investigate nonlocal carrier transport in 0.1 μm n-MOSFET's under low-voltage stress. Specifically, the role of electron-electron (e-e) interactions on hot electron injection is explored for two emerging device designs biased at a drain voltage V_d considerably less than the Si/SiO₂ injection barrier height φ_b. Simulation of both devices reveal that 1) although qV_d<φ_b, carriers can obtain energies greater than φ_b, and 2) the peak for electron injection is displaced approximately 20 nm beyond the peak in the parallel channel electric field. These phenomena constitute a spatial retardation of carrier heating that is strongly influenced by e-e interactions near the drain edge. (Virtually no injection is observed in our simulations when e-e scattering is not considered.) Simulations also show that an aggressive design based on larger dopant atoms, steeper doping gradients, and a self-aligned junction counter-doping process produces a higher peak in the channel electric field, a hotter carrier energy distribution, and a greater total electron injection rate into the oxide when compared to a more conventionally-doped design. The impact of spatially retarded carrier heating on hot-electron-induced device degradation is further examined by coupling an interface state distribution obtained from Monte Carlo simulations with a drift-diffusion simulator. Because of retarded carrier heating, the interface states are mainly generated further over the drain region where interface charge produces minimal degradation. Thus, surprisingly, both 0.1 μm n-MOSFET designs exhibit comparable drain current degradation rates     

Electrical characterization of very-narrow-gap bulk HgCdTe single crystals by variable magnetic field hall measurements

Variable-magnetic-field Hall measurements (0 to 1.5 T) are performed on very-narrow-gap bulk-grown Hg_1−xCd_xTe single crystals (0.165 ≤ x ≤ 0.2) at various temperatures (10 to 300K). The electron densities and mobilities are obtained within the one-carrier (electrons) approximation of the reduced-con-ductivity-tensor scheme. The present data together with the selected data set reported by other workers exhibit a pronounced peak when the electron mobility is plotted against the alloy composition x-value which has been predicted to be due to the effective-mass minimum at the bandgap-crossing (E_g ≈ 0). The observed position (x ≈ 0.165), height (≈4 x 10² m²Vs), and width (≈0.01 in x) of the mobility-peak can be explained by a simple simulation involving only ionized-impurity scattering. A lower bound of the effective mass is introduced as a fitting parameter to be consistent with the finiteness of the observed electron mobility and is found to be of the order of 10⁻⁴ of the mass of a free electron.     

Improving technical specifications from a risk perspective

The Technical Specifications (TSs) for a nuclear power plant is an important licensing document which defines various operational requirements or conditions. In light of the recent trends to move towards risk-based regulation, many researchers analyzed the risk impacts associated with the TS requirements, using the plant models, such as event trees or fault trees, that were developed as part of probabilistic safety assessments. This paper presents the insights gained from a review of these risk-based analyses of TSs, focussing on surveillance requirements and AOT (allowed outage time) requirements.     

Strength of Al-Zn-Mg-Cu matrix composite reinforced with SiC particles

The AA7075 alloys reinforced with SiC and without SiC particles were fabricated by a pressureless infiltration method, and then, their tensile properties and microstructures were analyzed. The spontaneous infiltration of molten metal at 800 °C for 1 hour under a nitrogen atmosphere made it possible to fabricate 7075 Al matrix composite reinforced with SiC, as well as a control 7075 Al without SiC. A significant strengthening even in the control alloy occurred due to the formation of in-situ AlN particle even without an addition of SiC particles. Composite reinforced with SiC particles exhibited higher strength values than the control alloy in all aging conditions (underaged (UA), peak-aged (PA), and overaged (OA)), as well as a solution treated condition. Spontaneous infiltration was further prompted owing to the combined effect of both Mg and Zn. This may lead to an enhancement of wetting between the molten alloy and the reinforcement. Consequently, strength improvement in a composite may be attributed to good bond strength via enhancement of wetting. The grain size of the control alloy is greatly decreased to about 2.5 μm compared to 10 μm for the commercial alloy. In addition, the grain size in the composite is further decreased to about 2 μm. These grain refinements contributed to strengthening of the control alloy and the composite.     

Ascorbic acid is a stimulatory cofactor for mitochondrial glycerol-3-phosphate dehydrogenase

We describe in this report a sensitive and direct method for the analysis of tamoxifen (TAM) in microsamples of plasma. The drug and internal standard (quinine bisulfate, I.S.) were separated on a 10-microm particle, 10 cm X 8 mm CN cartridge in conjunction with a radial compression system. The mobile phase was a mixture of 0.1 M sodium acetate in 0.001 M tetrabutylammonium phosphate solution (pH 6) and methanol (30:70, v/v) at a flow-rate of 4 ml/min. After addition of I.S. and o-phosphoric acid in acetonitrile (0.6 M) to the plasma (30 microl), the mixture was placed in an ultraviolet shortwave transluminator for 2 min prior to injection into the chromatograph. The compounds were detected in the effluent fluorometrically at excitation and emission wavelengths of 258 and 378 nm, respectively. Under these conditions, no interference in the assay from any endogenous substance or other concurrently used drugs was observed and the retention times of I.S. and TAM were 4.4 and 10.15 min, respectively. The concentration of TAM in plasma was linearly (r>0.9983) related to the peak height ratio (TAM/I.S.) in the range 0.01-2.0 microg ml(-1) and C.V. at 0.075, 0.4 and 1.2 microg ml(-1) was < or = 4.96%. We are currently using this assay for monitoring TAM in plasma and investigating its pharmacokinetics in cancer patients receiving cytotoxic drugs in addition to TAM as a multi-drug resistance modifier.     

Interdiffusion behavior of Hg in HgTe/CdTe superlattices grown on Cd0.96Zn0.04 Te (211)B substrates by molecular beam epitaxy

Double-crystal x-ray rocking curve (DCRC) and secondary-ion mass-spectroscopy (SIMS) measurements have been performed to investigate the effect of rapid thermal annealing on the interdiffusion behavior of Hg in HgTe/CdTe superlattices grown on Cd_0.96Zn_0.04Te (211)B substrates by molecular beam epitaxy. The sharp satellite peaks of the DCRC measurements on a 100-period HgTe/CdTe (100Å/100Å) superlattice show a periodic arrangement of the superlattice with high-quality interfaces. The negative direction of the entropy change obtained from the diffusion coefficients as a function of the reciprocal of the temperature after RTA indicates that the Hg diffusion for the annealed HgTe/CdTe superlattice is caused by an interstitial mechanism. The Cd and the Hg concentration profiles near the annealed HgTe/CdTe superlattice interfaces, as measured by SIMS, show a nonlinear behavior for Hg, originating from the interstitial diffusion mechanism of the Hg composition. These results indicate that a nonlinear interdiffusion behavior is dominant for HgTe/CdTe superlattices annealed at 190°C and that the rectangular shape of HgTe/CdTe superlattices may change to a parabolic shape because of the intermixing of Hg and Cd due to the thermal treatment.     

The crystal structure of an Fe-superoxide dismutase from the hyperthermophile Aquifex pyrophilus at 1.9 A resolution: structural basis for thermostability

The incidence of stress fractures is increasing among competitive and recreational athletes as well as among children and the elderly. By understanding the continuum of bone's response to stress and maintaining an appropriate index of suspicion, the health care provider can diagnose these injuries appropriately. An accurate history and examination is essential and will differentiate stress fractures from other stress reactions. The more common stress fractures are discussed.