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131.
Shamansky H.T. Dominek A.K. Peters L. Jr. 《Antennas and Propagation, IEEE Transactions on》1989,37(8):1019-1025
The traveling-wave energy, which multiply diffracts on a straight thin wire, is represented as a sum of terms, each with a distinct physical meaning, that can be individually examined in the time domain. Expressions for each scattering mechanism on a straight thin wire are cast in the form of four basic electromagnetic wave concepts: diffraction, attachment, launch, and reflection. Using the basic mechanisms from P.Ya. Ufimtsev (1962), each of the scattering mechanisms is included into the total scattered field for the straight thin wire. Scattering as a function of angle and frequency is then compared to the moment-method solution. These analytic expressions are then extended to a lossy wire with a simple approximate modification using the propagation velocity on the wire as derived from the Sommerfeld wave on a straight lossy wire. Both the perfectly conducting and lossy wire solutions are compared to moment-method results, and excellent agreement is found. As is common with asymptotic solutions, when the electrical length of wire is smaller than 0.2 λ the results lose accuracy. The expressions modified to approximate the scattering for the lossy thin wire yield excellent agreement even for lossy wires where the wire radius is on the order of skin depth 相似文献
132.
Emmerich M.T.M. Giannakoglou K.C. Naujoks B. 《Evolutionary Computation, IEEE Transactions on》2006,10(4):421-439
This paper presents and analyzes in detail an efficient search method based on evolutionary algorithms (EA) assisted by local Gaussian random field metamodels (GRFM). It is created for the use in optimization problems with one (or many) computationally expensive evaluation function(s). The role of GRFM is to predict objective function values for new candidate solutions by exploiting information recorded during previous evaluations. Moreover, GRFM are able to provide estimates of the confidence of their predictions. Predictions and their confidence intervals predicted by GRFM are used by the metamodel assisted EA. It selects the promising members in each generation and carries out exact, costly evaluations only for them. The extensive use of the uncertainty information of predictions for screening the candidate solutions makes it possible to significantly reduce the computational cost of singleand multiobjective EA. This is adequately demonstrated in this paper by means of mathematical test cases and a multipoint airfoil design in aerodynamics. 相似文献
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134.
Buttari D. Chini A. Meneghesso G. Zanoni E. Moran B. Heikman S. Zhang N.Q. Shen L. Coffie R. DenBaars S.P. Mishra U.K. 《Electron Device Letters, IEEE》2002,23(2):76-78
Pre-metal-deposition reactive ion etching (RIE) was performed on an Al0.3Ga0.7N/AlN/GaN heterostructure in order to improve the metal-to-semiconductor contact resistance. An optimum AlGaN thickness for minimizing contact resistance was determined. An initial decrease in contact resistance with etching time was explained in terms of removal of an oxide surface layer and/or by an increase in tunnelling current with the decrease of the AlGaN thickness. The presence of a dissimilar surface layer was confirmed by an initial nonuniform etch depth rate. An increase in contact resistance for deeper etches was experienced. The increase was related to depletion of the two-dimensional (2-D) electron gas (2-DEG) under the ohmics. Etch depths were measured by atomic force microscopy (AFM). The contact resistance decreased from about 0.45 Ωmm for unetched ohmics to a minimum of 0.27 Ωmm for 70 Å etched ohmics. The initial thickness of the AlGaN layer was 250 Å. The decrease in contact resistance, without excessive complications on device processing, supports RIE etching as a viable solution to improve ohmic contact resistance in AlGaN/GaN HEMTs 相似文献
135.
136.
137.
Mountfield K. Mitchell P. Lee J.-W. Demczyk B. Artman J. 《IEEE transactions on magnetics》1987,23(5):2037-2039
A sequence of Co78 Cr22 films, 500 nm in thickness, was prepared by deposition on glass in a modified Varian D.C. magnetron S-gun sputtering system. The substrate temperature during deposition, Ts , was fixed at various values with an upper limit of 300°C. Specimens were examined by VSM, TM, FMR and TEM. Ms rises significantly with increasing Ts , peaking at 200°C at 370 emu/cm3. The effective volume-averaged anisotropy drops for Ts >110°C from +1.6 KOe to progressively negative values (-4.3 KOe at 300°C). From FMR we find indications of the presence, in addition to the transition and bulk layers, of a highly negative anisotropy constituent (sim-11.5 KOe anisotropy field). This resonance appears at Ts values of 150°C and above. TEM plane and cross-section views taken on a Ts = 150°C specimen show islands composed of tilted columns within the bulk. For vertical recording, specimens prepared at Ts values between 50 and 100°C are recommended. On the other hand, for longitudinal recording applications, films prepared at Ts values above 250°C would seem to be appropriate. 相似文献
138.
139.
I. N. Polandov V. K. Novik O. K. Gulish B. P. Bogomolov V. B. Morozov 《Measurement Techniques》1989,32(9):888-890
Translated from Izmeritel'naya Tekhnika, No. 9, pp. 34–35, September, 1989. 相似文献
140.