Thermal expansion characteristics of a titanium modified austenitic stainless steel: measurement by high-temperature X-ray diffraction and modelling using Grüneisen formalism

The thermal expansion of a titanium modified, swelling resistant austenitic stainless steel designated as D9 is studied by measuring the lattice parameter as a function of temperature in the range 300-1300 K by high-temperature X-ray diffraction technique. The thermal expansion data thus obtained is in reasonable agreement with the typical thermal expansion values reported for similar nuclear grade austenitic stainless steels. However, at temperatures exceeding 900 K, the measured thermal expansivity exhibits a pronounced non-linear increase due partly to the precipitation of complex carbide and intermetallic phases. The high-temperature thermal expansion data obtained in the present study are augmented by modelling the low-temperature thermal expansion behaviour by Grüneisen formalism.     

Dynamic bandwidth control of the virtual path in an asynchronoustransfer mode network

The virtual path concept has several valuable features to construct an economical and efficient asynchronous transfer mode (ATM) network. One of them is bandwidth control which affords transmission efficiency improvement through statistical sharing of capacity. An effective bandwidth control algorithm and its calculated performance are described. Network performance with the algorithm is evaluated, and the bandwidth control is shown to successfully improve network transmission efficiency with only a slight increase in processing load compared to the fixed bandwidth scheme. A method is also proposed to equalize call loss probability for each virtual path. The effectiveness of the method is demonstrated by analysis     

Signal processing using cellular neural networks

The cellular neural network (CNN) architecture combines the best features from traditional fully-connected analog neural networks and digital cellular automata. The network can rapidly process continuous-valued (gray-scale) input signals (such as images) and perform many computation functions which traditionally were implemented in digital form. Here, we briefly introduce the the theory of CNN circuits, provide some examples of CNN applications to image processing, and discuss work toward a CNN implementation in custom CMOS VLSI. The role of analog computer-aided design (CAD) will be briefly presented as it relates to analog neural network implementation.This work is supported in part by the Office of Naval Research under Contract N00014-89-J1402, and the National Science Foundation under grant MIP-8912639.     

89-GHz fT room-temperature silicon MOSFETs

The authors report the implementation of deep-submicrometer Si MOSFETs that at room temperature have a unity-current-gain cutoff frequency (f_T) of 89 GHz, for a drain-to-source bias of 1.5 V, a gate-to-source bias of 1 V, a gate oxide thickness of 40 Å, and a channel length of 0.15 μm. The fabrication procedure is mostly conventional, except for the e-beam defined gates. The speed performance is achieved through an intrinsic transit time of only 1.8 ps across the active device region     

A 6-ns ECL 100 K I/O and 8-ns 3.3-V TTL I/O 4-Mb BiCMOS SRAM

The authors report a 4 M word×1 b/1 M word×4 b BiCMOS SRAM that can be metal mask programmed as either a 6-ns access time for an ECL 100 K I/O interface to an 8-ns access time for a 3.3-V TTL I/O interface. Die size is 18.87 mm×8.77 mm. Memory cell size is 5.8 μm×3.2 μm. In order to achieve such high-speed address access times the following technologies were developed: (1) a BiCMOS level converter that directly connects the ECL signal level to the CMOS level; (2) a high-speed BiCMOS circuit with low threshold voltage nMOSFETs; (3) a design method for determining the optimum number of decoder gate stages and the optimum size of gate transistors; (4) high-speed bipolar sensing circuits used at 3.3-V supply voltage; and (5) 0.55-μm BiCMOS process technology with a triple-well structure     

The process window for diamond deposition from the vapor phase with sulfur in the C–H–O feed gas mixtures

Theoretical predictions using a modified radical species ternary diagram for C–H–O system indicate that addition of sulfur expands the C–H–O gas phase compositional window for diamond deposition. Sulfur addition to no-growth domain increases the carbon super-saturation by binding the oxygen and the addition of sulfur to the non-diamond domain reduces the heavy carbon super-saturation by decreasing C_nH_m species concentration in the gas phase. The overall effect of sulfur addition to gas phase mixtures is characterized as that of oxygen addition to the C–H system, i.e. expansion of the compositional window over which diamond can be deposited from the gas phase. In addition, the increasing sulfur concentration to diamond domain feed gases beyond 2000 ppm did not affect the steady state gas phase composition but the quality of diamond was reduced.     

An analysis of the electrical conductivity in BaSO4-added Ag2SO4 solid electrolyte system

The compositions (1 −x)Ag₂SO₄−(x)BaSO₄, wherex=0·01 to 0·6, were prepared by slow cooling of the melt. The extent of the solid solubility of Ba²⁺ in Ag₂SO₄ was determined by X-ray powder diffraction and scanning electron microscopy. The bulk conductivity of each sample was obtained using a detailed impedance analysis. The partial substitution of Ba²⁺ results in the enhancement of conductivity in compliance with the classical aliovalent doping theory. A simplistic model based on lattice distortion (expansion) due to partial substitution of Ag⁺ by the bigger Ba²⁺ has been considered to explain enhanced conductivity. Beyond solid-solubility limit (5·27 mole%) the BaSO₄-dispersed Ag₂SO₄ conductivity follows the usual trend seen in binary systems. An increase in conductivity in this case is discussed in the light of interfacial reactions and surface defect chemistry. The maximum conductivity in 20 mole% BaSO₄ dispersed Ag₂SO₄ is due to percolation threshold.