Blue electroluminescent devices withSrGa2S4:Ce for full-color display

In order to realize full-color electroluminescent (EL) displays, which are expected as a dominant candidate for the future multimedia flat panel display, blue EL devices with SrGa₂S₄:Ce have been prepared by molecular beam epitaxy (MBE). This paper proposes a novel deposition method employing Sr metal and Ga₂S₄ compound as the source materials. A single-phase SrGa₂S₄ layer is obtained in a Ga₂S₃/Sr flux ratio of 60 and at the growth temperature of 560°C. We have obtained the well-saturated blue with CIE color coordinates of x=0.14, y=0.14 and brighter blue EL devices made by optimizing the growth conditions in MBE. The maximum luminance of 70 cd/m² in comparison with the 3 cd/m₂ of our previous EL devices, is achieved at a driving frequency of 1 kHz     

Room temperature pulsed operation of 1.5 μm GaInAsP/InPvertical-cavity surface-emitting laser

Room-temperature pulsed operation of a GaInAsP/InP vertical-cavity surface-emitting laser diode (VCSELD) with an emission wavelength near 1.55 μm is reported. A double heterostructure with a 34-pair GaInAsP (λ_g=1.4 μm)/InP distributed Bragg reflector (DBR) was grown by metalorganic chemical vapor deposition (MOCVD). The measured reflectivity of the semiconductor DBR is over 97% and threshold current is 260 mA for a 40-μmφ device with a 0.88-μm-thick active layer. Threshold current density is as low as 21 kA/cm² at room temperature     

Direct growth of CdTe on (100), (211), and (111) Si by metalorganic chemical vapor deposition

CdTe epilayers were grown directly on (100), (211), and (111) silicon substrates by metalorganic chemical vapor deposition (MOCVD). The crystallinity and the growth orientation of the CdTe film were dependent on the surface treatment of the Si substrate. The surface treatment consisted of exposure of the Si surface to diethyltelluride (DETe) at temperatures over 600°C prior to CdTe growth. Direct growth of CdTe on (100) Si produced polycrystalline films whereas (lll)B single crystals grew when Si was exposed to DETe prior to CdTe growth. On (211) Si, single crystal films with (133)A orientation was obtained when grown directly; but produced films with (211)A orientation when the Si surface was exposed to DETe. On the other hand, only (lll)A CdTe films were possible on (111) Si, both with and without Te source exposure, although twinning was increased after exposure. The results indicate that the exposure to a Te-source changes the initial growth stage significantly, except for the growth on (111) Si. We propose a model in which a Te atom replaces a Si atom that is bound to two Si atoms.     

Biodegradation of glutaraldehyde-tanned human umbilical vein grafts

A retrospective analysis of the long-term behavior of 111 glutaraldehyde-tanned human umbilical vein (HUV) grafts implanted between September 1977 and December 1993 was conducted. A total of 81 patients, with a mean age of 68.7 years, received the grafts and were followed up for between 1 and 131 months. The 5-year primary cumulative patency rate for above-knee femoropopliteal bypass was 83.1%, whereas that of other bypasses was 60.9%. An aneurysm of the graft was defined as a physically apparent localized dilatation, with diffuse ectasia being excluded. There were 11 aneurysms found in 9 grafts, 2 of which arose at the factory-made suture lines. The accumulated incidence of aneurysms had reached 21.9% by the 6th year. One aneurysm compressed the graft and resulted in limb-threatening ischemia and another resulted in frank rupture. Moreover, reinforcement of the mesh could not prevent aneurysm development, the repair of which is mandatory due to the risk of rupture and acute thrombosis. The HUV grafts showed an acceptable patency rate in the above-knee location, but the incidence of aneurysm formation after 5 years was abnormally high. Thus, both the risks and benefits of HUV grafts must be taken into account when considering their clinical application.     

Eight-channel flat spectral response arrayed-waveguide multiplexer with asymmetrical Mach-Zehnder filters

An eight-channel flat spectral response arrayed-waveguide grating (AWG) multiplexer with asymmetrical Mach-Zehnder filters has been fabricated on the planar lightwave circuit (PLC). The monotonic spectral loss characteristics of AWG have been canceled by the opposite spectral response in the asymmetric MZ filter. The 1.5 dB bandwidth of 141 GHz and 3 dB bandwidth of 159 GHz are obtained for the 200 GHz channel spacing. The 1.5 dB bandwidth becomes 1.8 times wider than that of the conventional AWG. Crosstalks to neighboring and all other channels are less than -24 dB and the on-chip insertion losses range from 7.0 to 7.4 dB, respectively.