Thermal and mechanical stability of soldering QFP with Sn-Bi-Ag lead-free alloy

Thermal stability of the circuit boards with a quad flat package (QFP) soldered with Sn-58wt%Bi-(0, 0.5 and 1.0) wt% Ag and their microstructural features were evaluated. The addition of 1.0 wt% Ag causes the formation of large primary Ag/sub 3/Sn precipitates in the solder while no primary Ag/sub 3/Sn is found in Sn-57Bi-0.5Ag. Thermo-Calc calculation indicates that the lowest limit content for the formation of primary Ag/sub 3/Sn is about 0.8 wt%. Heat-exposure below 100/spl deg/C has no serious degradation on the joint structure for all solders. Heat-exposure at 125/spl deg/C caused serious degradation in joint strength for all alloys. The contamination of Pb from Sn-Pb surface plating on the components reduces the interface tolerance by forming ternary Sn-Pb-Bi phase melting at low temperature. Thermal fatigue between -20 and 80/spl deg/C does not have any significant influence on joint structure.     

Cover Picture: Assembly and Photoinduced Organization of Mono‐ and Oligopeptide Molecules Containing an Azobenzene Moiety (Adv. Funct. Mater. 9/2007)

An illustration of the phototriggered organization and dispersion of tri‐peptide‐substituted azobenzene derivatives, as reported on p. 1507 by Yoko Matsuzawa and co‐workers. The tri‐peptide units form a beta‐sheet structure through hydrogen bonding to assemble a fibrous network system. Cis–trans photoisomerization of the azobenzene moiety leads to a large polarity change of the component molecule to break and re‐form hydrogen bonds between the tri‐peptide units. Assembled systems consisting of an azobenzene moiety as the photofunctional component and valyl units as the network backbone are investigated. The molecular ordering of these assemblies is examined by spectroscopy and theoretical calculations. The number of valyl units greatly influences the molecular order in the organized systems. Only N‐(L ‐valyl‐L ‐valyl‐L ‐valyl)azobenzene‐4‐carboxamide ( 3 ) forms a complete β‐sheet structure in this artificial assembly. Upon photoirradiation, the azobenzene moieties isomerize completely, revealing the reversibility in the structural organization through the flexibility of the β‐sheet network in this system.     

Subcellular localization of fructosyl amino acid oxidases in peroxisomes of Aspergillus terreus and Penicillium janthinellum

Fructosyl amino acid oxidase (FAOD) is the enzyme catalyzing the oxidative deglycation of Amadori compounds, such as fructosyl amino acids, yielding the corresponding amino acids, glucosone, and H(2)O(2). In a previous report, we determined the primary structures of cDNAs coding for FAODs from two fungal strains Aspergillus terreus AP1 and Penicillium janthinellum and we found that both fungal FAODs included the putative peroxisome targeting signal 1 (PTS1) at the carboxyl terminal (Yoshida, N. et al., Eur. J. Biochem., 242, 499-505, 1996). In this study, we determined the intracellular localization of FAODs in these two fungi. Subcellular fractionation experiments and immuno-electronmicroscopic observations, together with the previous findings indicated that the FAODs were localized in peroxisomes of A. terreus AP1 and P. janthinellum. These FAODs were also found to belong to a new member of "peroxisomal sarcosine oxidase family protein" in eucaryotic cells.     

A novel hemiacetal dehydrogenase activity involved in ethyl acetate synthesis in Candida utilis

Acetate ester synthesis was studied in vitro with the ethyl acetate-producing yeast Candida utilis. The level of enzyme activity observed for the NAD+-dependent hemiacetal dehydrogenase acting on hemiacetal, which was produced non-enzymatically from an alcohol and an aldehyde, was much greater than that for the other enzyme involved in ester synthesis, alcohol acetyltransferase. The level of ethyl acetate synthesis in vivo approximately paralleled the hemiacetal dehydrogenase (HADH) activity. The results suggest that the main pathway for ethyl acetate synthesis in C. utilis involves a novel hemiacetal dehydrogenase activity.     

Study on the device characteristics of a quasi-SOI power MOSFETfabricated by reversed silicon wafer direct bonding

The device characteristics of a quasi-SOI power MOSFET were investigated to obtain its optimum device structure. The oxide at the original bottom surface of the bulk power MOSFET of the quasi-SOI power MOSFET formed by reversed silicon wafer direct bonding acts as the buried oxide of the conventional SOI power MOSFET. The short channel effect of the quasi-SOI power MOSFET was larger than that in the conventional SOI power MOSFET. It was suppressed by increasing the width of the oxide in the body region, and the parasitic bipolar effect was suppressed by decreasing it. We also propose a new device structure which can suppress the short channel effect and parasitic bipolar effect of a quasi-SOI power MOSFET based on the results of these experiments     

Transient phase conjunction in a two-level system

An analytical expression for conjugate signals is developed for a case where three rectangular pulses with the same center frequency are injected into a two-level system. The Maxwell's equation is solved with the slowly varying envelope approximation and with the perturbative third-order nonlinear polarization expression of a two-level system. Numerical examples are discussed in such a way that the input pulsewidth is changed relative to the energy relaxation and dephasing times. As the optical pulsewidth becomes short, ripples appear in the signal pulse due to the beat between the optical field and the resonant oscillation of the atomic system     

A CMOS multichannel 10-Gb/s transceiver

We describe a CMOS multichannel transceiver that transmits and receives 10 Gb/s per channel over balanced copper media. The transceiver consists of two identical 10-Gb/s modules. Each module operates off a single 1.2-V supply and has a single 5-GHz phase-locked loop to supply a reference clock to two transmitter (Tx) channels and two receiver (Rx) channels. To track the input-signal phase, the Rx channel has a clock recovery unit (CRU), which uses a phase-interpolator-based timing generator and digital loop filter. The CRU can adjust the recovered clock phase with a resolution of 1.56 ps. Two sets of two-channel transceiver units were fabricated in 0.11-/spl mu/m CMOS on a single test chip. The transceiver unit size was 1.6 mm /spl times/ 2.6 mm. The Rx sensitivity was 120-mVp-p differential with a 70-ps phase margin for a common-mode voltage ranging from 0.6 to 1.0 V. The evaluated jitter tolerance curve met the OC-192 specification.     

Dirac Cone Spin Polarization of Graphene by Magnetic Insulator Proximity Effect Probed with Outermost Surface Spin Spectroscopy

The effects of the proximity contact with magnetic insulator on the spin‐dependent electronic structure of graphene are explored for the heterostructure of single‐layer graphene (SLG) and yttrium iron garnet Y₃Fe₅O₁₂ (YIG) by means of outermost surface spin spectroscopy using a spin‐polarized metastable He atom beam. In the SLG/YIG heterostructure, the Dirac cone electrons of graphene are found to be negatively spin polarized in parallel to the minority spins of YIG with a large polarization degree, without giving rise to significant changes in the π band structure. Theoretical calculations reveal the electrostatic interfacial interactions providing a strong physical adhesion and the indirect exchange interaction causing the spin polarization of SLG at the interface with YIG. The Hall device of the SLG/YIG heterostructure exhibits a nonlinear Hall resistance attributable to the anomalous Hall effect, implying the extrinsic spin–orbit interactions as another manifestation of the proximity effect.     

Filling behavior of UV nanoimprint resin observed by using a midair structure mold

The filling behavior of resin during UV nanoimprint lithography (UV-NIL) was observed by using a “midair structure mold” and by changing the imprint pressure. The midair structure molds were fabricated by electron beam lithography (EBL) using hydrogen silsesquioxane (HSQ) as a negative tone resist. After the fabrication of midair structure mold, two types of surface treatment molds, which were with or without release coating, were prepared. Using these molds, the filling behavior of a UV curable resin was investigated at various pressures. The results indicate that a pressure of approximately 1.2 MPa is necessary for complete filling in the case of molds treated with a release agent. This method demonstrates effect of a release coating for UV-NIL.