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41.
Frequency-shifted feedback (FSF) laser exhibits outstanding features in its oscillation spectrum. We analyze build-up dynamic properties of the FSF laser by means of rate equation and analyze steady-state dynamic properties of the FSF laser by means of Wigner-Ville distribution of intracavity electric field. Furthermore, we analyze instantaneous oscillation frequency at peak spectral intensity and oscillation bandwidth of its spectrum using the formula of instantaneous spectral intensity derived from Wigner-Ville distribution of intracavity electric field. These analytical results are in good agreement with the experimental ones which have been observed by a diode-pumped Nd:YVO4 FSF laser. It becomes clear that the FSF laser supports many frequency components simultaneously even though the gain medium is homogeneously broadened and has a continuously chirped frequency components of comb in which the creation of chirped frequency components are strongly correlated in phase because of a replica of the preceding components. Also, the instantaneous oscillation frequency is closely related to the detuning frequency which depends on the total net gain in the cavity and the gain bandwidth of atomic transition. The oscillation bandwidth is defined as the product of the saturation-broadened bandwidth and the total resonant modes contributing to FSF operation 相似文献
42.
A novel mode-size transformer based on interference between guided and leaky modes is proposed and analyzed. Simulation shows significant improvement in spot-size transform efficiency per unit length, in comparison with the conventional tapered waveguide mode size converters based on mode evolution. Owing to its structural simplicity, easy fabrication is another merit of the new spot-size transformer 相似文献
43.
1.5 nm direct-tunneling gate oxide Si MOSFET's 总被引:6,自引:0,他引:6
Sasaki H. Ono M. Yoshitomi T. Ohguro T. Nakamura S. Saito M. Iwai H. 《Electron Devices, IEEE Transactions on》1996,43(8):1233-1242
In this paper, normal operation of a MOSFET with an ultra-thin direct-tunneling gate oxide is reported for the first time. These high current drive n-MOSFET's were fabricated with a 1.5 nm direct-tunneling gate oxide. They operate well at gate lengths of around 0.1 μm, because the gate leakage current falls in proportional to the gate length, while the drain current increases in inverse proportion. A current drive of more than 1.0 mA/μm and a transconductance of more than 1,000 mS/mm were obtained at a gate length of 0.09 μm at room temperature. These are the highest values ever obtained with Si MOSFET's at room temperature. Further, hot-carrier reliability is shown to improve as the thickness of the gate oxide is reduced, even in the 1.5 nm case. This work clarifies that excellent performance-a transconductance of over 1,000 mS/mm at room temperature-can be obtained with Si MOSFET's if a high-capacitance gate insulator is used 相似文献
44.
Preparation and properties of CuInS2 thin film prepared from electroplated precursor 总被引:1,自引:1,他引:1
Yoshio Onuma Kenji Takeuchi Sumihiro Ichikawa Yasunari Suzuki Ryo Fukasawa Daisuke Matono Kenji Nakamura Masao Nakazawa Koji Takei 《Solar Energy》2006,80(1):132-138
Thin CuInS2 films were prepared by sulfurization of Cu/In bi-layers. First, the precursor layer was electroplated onto the treated surface of Mo-coated glass. Observation of the cross-section prepared by focused ion beam (FIB) etching revealed that the void-free film was initially formed on the top surface of the precursor layer and continued to grow until the advancing front of the film reached the Mo layer. The nucleation of voids near the bottom of the CuInS2 film followed. To determine whether the condition of the Cu/In alloy influences the CuInS2 quality we investigated the Cu/In alloy state using FIB. We found that the annealed precursor of low Cu/In ratio (1.2) has several voids in the mid position in the layer compared with Cu-rich precursor (1.6). The cross-sectional view of the Cu-rich absorber layer is uniform compared with the low copper absorber layer. Thin film solar cells were fabricated using the CuInS2 film (Cu/In ratio: 1.2) as an optical absorber layer. It was found that the optimization of a sulfurization period is important in order to improve the cell efficiency. We have not yet obtained good results with high Cu-rich absorber because of a blister problem. This blister was found before sulfurization. So, we are going to solve this blister problem before sulfurization. 相似文献
45.
Maehara Fumiaki Nakamura Osamu Takanashi Hitoshi 《Wireless Personal Communications》2000,15(3):181-197
We propose a novel SIR weighting postdetection combining diversity scheme with a new accurate SIR estimation method. The SIR is estimated and used as the weighting factor to compensate severe cochannel interference, one of the most important issues for PCS in terms of frequency utilization. Theimprovement offered by the proposal depends on SIR estimation accuracy.The SIR is, in this paper, estimated by a matched filter where theauto-correlation between received signal and unique word is calculated. Computer simulationsconfirm that the SIR of each diversity branch can be estimated easily andaccuratelyby the proposed SIR estimation method. The proposed diversity scheme achievesaperformance very close to that of ideal SINR weighting diversity underRayleighfading with severe cochannel interference. When average SIR = 10 dB and thenumber of branches(L)=4, the proposed diversity scheme lowers the requiredEb/N0 by 5 dB at BER = 1×10-3compared to conventional maximal ratio combining diversity. This paper alsopresentsthe unique word length required to realize adequate performance, i.e.,robustnessagainst high-pitch Rayleigh fading. 相似文献
46.
Nakamura K. Hara T. Yoshida M. Miyahara T. Ito H. 《Quantum Electronics, IEEE Journal of》2000,36(3):305-316
This paper describes the theoretical and experimental study of a new technique for optical frequency domain ranging (OFDR) by a frequency-shifted feedback (FSF) laser. In conventional OFDR, a frequency chirped single-mode laser is used as a light source to convert a distance into a beat frequency, and a tradeoff exists between measurement range and resolution. The FSF laser output consists of periodically generated chirped frequency components whose chirp rate is faster than 100 PHz/s (P=1015), By use of the FSF laser, the tradeoff is removed and long-distance high-resolution OFDR is realized In the experiment, a distance of 18.5 km was measured with a resolution of 20 mm 相似文献
47.
Mizuki Tenjimbayashi Sadaki Samitsu Yuko Watanabe Yasuyuki Nakamura Masanobu Naito 《Advanced functional materials》2021,31(21):2010957
Liquid marble (LM) is a droplet that is wrapped by hydrophobic solid particles, which behave as a non-wetting soft solid. Based on these properties, LM can be applied in fluidics and soft device applications. A wide variety of functional particles have been synthesized to form functional LMs. However, the formation of multifunctional LMs by integrating several types of functional particles is challenging. Here, a general strategy for the flexible patterning of functional particles on droplet surfaces in a patchwork-like design is reported. It is shown that LMs can switch their macroscopic behavior between a stable and active state on super-repellent surfaces in situ by jamming/unjamming the surface particles. Active LMs hydrostatically coalesce to form a self-sorted particle pattern on the droplet surface. With the support of LM handling robotics, on-demand cyclic activation–manipulation–coalescence–stabilization protocols by LMs with different sizes and particle types result in the reliable design of multi-faced LMs. Based on this concept, a single bi-functional LM is designed from two mono-functional LMs as an advanced droplet carrier. 相似文献
48.
Hiroaki Nakamura Naomichi Hatano Ryōen Shirasaki Naomi Hirayama Kenji Yonemitsu 《Journal of Electronic Materials》2011,40(5):601-605
We consider thermoelectric effects in a pseudo-one-dimensional electron gas (P1DEG) with a spin–orbit interaction (SOI). The
SOI splits the dispersion relation of the P1DEG into subbands with an energy gap. We find quantum oscillations in transport
coefficients, which coincide with the locations of the subband edges, as a function of the electrochemical potential. 相似文献
49.
Automated camerawork for capturing desktop presentations 总被引:1,自引:0,他引:1
Ozeki M. Nakamura Y. Ohta Y. 《Vision, Image and Signal Processing, IEE Proceedings -》2005,152(4):437-447
A novel automated camera control method for capturing desktop presentations is introduced. Typical features and the camerawork of shots that appear frequently in TV programs are discussed. To realise those features in this automated video capturing system, the purpose of camerawork is classified from two points of view: target and aspect-of-target. Then, the correspondence between the classification and typical shots and camerawork is considered. A virtual-frame control algorithm based on this idea is proposed, and its implementation in a video production system. Results are shown that verify this method through two kinds of experiments, virtual video capturing using CG animations and real video capturing of real presentations. 相似文献
50.
N. Yuge M. Abe K. Hanazawa H. Baba N. Nakamura Y. Kato Y. Sakaguchi S. Hiwasa F. Aratani 《Progress in Photovoltaics: Research and Applications》2001,9(3):203-209
An estimate has been made of the feasibility of a metallurgical purification process, the NEDO (New Energy and Industrial Technology Development Organization) melt‐purification process, for manufacturing solar‐grade silicon from metallurgical‐grade silicon. Equipment has been developed to pilot manufacturing plant scale. The system comprises an electron‐beam furnace for phosphorus removal and a plasma furnace for boron removal. Each furnace has a mold for directional solidification to remove metallic impurities. The concentration of each impurity in the silicon ingot purified through the whole process satisfied the solar‐grade level. The Solar‐grade silicon produced showed p‐type polarity and resistivity within the range 0·5–1·5 Ω cm. Copyright © 2001 John Wiley & Sons, Ltd. 相似文献