系统级封装技术及其应用

本文介绍了系统级封装技术及其兴起背景,对比了与SoC的异同。通过分析系统级封装的技术特点,阐述了其优势;分析了系统级封装的成本构成和特点。本文从集成电路产业链整合的观点,分析了国内系统级封装的机遇与挑战;以长电科技为例,介绍了系统级封装在设计、制造上的关键技术与当前的能力,并分析了未来的趋势和挑战。本丈还对当前的系统级封装产品与应用领域做了详细介绍。     

为烟雾检测器提供遥测报警

基于离子的烟雾检测器便宜且有效,除了安装在室内外,还经常安装在车库及其他室外建筑中,这些设计需要把报警信号送回房间或家庭安全系统.图1所示电路通过检测传感器警报时的工作电流提供检测器的遥测输出.正常监视模式下,工作电流只有50μA,触发报警时电流超过3mA.该电路由烟雾检测器的内部电池供电,对检测器影响很小.图中所示比较器具有较宽的工作电压范围、低工作电流和内置电压基准.典型静态工作电流小于3μA.     

A 16-Bit by 16-Bit MAC Design Using Fast 5:3 Compressor Cells

3:2 counters and 4:2 compressors have been widely used for multiplier implementations. In this paper, a fast 5:3 compressor is derived for high-speed multiplier implementations. The fast 5:3 compression is obtained by applying two rows of fast 2-bit adder cells to five rows in a partial product matrix. As a design example, a 16-bit by 16-bit MAC (Multiply and Accumulate) design is investigated both in a purely logical gate implementation and in a highly customized design. For the partial product reduction, the use of the new 5:3 compression leads to 14.3% speed improvement in terms of XOR gate delay. In a dynamic CMOS circuit implementation using 0.225 m bulk CMOS technology, 11.7% speed improvement is observed with 8.1% less power consumption for the reduction tree.     

超越“纳米级”设计时代

毫无疑问,我们正在跨入“纳米级”设计时代（处于1000nm到1nm级别的设计）的后期阶段。在未来18个月内,我们将开始部署32nm设计流程;而且,从32nm跨越到22nm所存在的障碍已经被攻克。我们将会在65nm和45/40nm之间采用有效率的、以价值为基础的设计流程。我们将乐于获得多CPU芯片和虚拟软件支持带来的优越性,凭借着新型设计平台的威力,迎来产品和应用新一轮的蓬勃发展。新型设计平台使设计公司可以充分发挥各种成本／功能／价值工艺节点之所长,满足当前市场上的定制需求。     

The effect of small-signal AC voltages on C–V characterization and parameter extraction of SiO2 thin films

The effect of different small-signal ac voltage amplitudes on C–V curves characterized by thin SiO₂ based p-type MOS capacitor with aluminum gate is reported. When the small-signal ac voltage is comparable to the gate bias, the thickness of SiO₂ thin films extracted from the accumulation capacitance is found to be independent of small-signal ac voltage amplitudes, but the flat band voltage shift and interface state density associated with the variation of depletion layer capacitance are dependent on small-signal ac voltage amplitudes. They all increase with the small-signal ac voltage amplitudes. The experimental results reveal that the optimum small-signal ac voltage should be less than 100 mV. The mechanisms involving the depletion layer changes with small-signal ac voltages in SiO₂ thin films are also discussed in this paper.     

Inclusion of minority charge carriers in the solution of Poisson's equation for a metal semiconductor contact in thermal equilibrium†

A theory of the space-charge capacitance of a metal-semiconductor contact has been developed by solving the Poisson equation for the space-charge region under zero current condition. The space charge is assumed to consist not only of ionized donors and acceptors but also of electrons and holes. An explicit expression for the space-charge capacitance under those general conditions is given. In an appendix a procedure is outlined whereby the theory could be developed for the case of Fermi statistics with partially ionized donors.     

Voltage pulses change neural interface properties and improve unit recordings with chronically implanted microelectrodes

Current neuroprosthetic systems based on electrophysiological recording have an extended, yet finite working lifetime. Some posited lifetime-extension solutions involve improving device biocompatibility or suppressing host immune responses. Our objective was to test an alternative solution comprised of applying a voltage pulse to a microelectrode site, herein termed "rejuvenation." Previously, investigators have reported preliminary electrophysiological results by utilizing a similar voltage pulse. In this study we sought to further explore this phenomenon via two methods: 1) electrophysiology; 2) an equivalent circuit model applied to impedance spectroscopy data. The experiments were conducted via chronically implanted silicon-substrate iridium microelectrode arrays in the rat cortex. Rejuvenation voltages resulted in increased unit recording signal-to-noise ratios (10%/spl plusmn/2%), with a maximal increase of 195% from 3.74 to 11.02. Rejuvenation also reduced the electrode site impedances at 1 kHz (67%/spl plusmn/2%). Neither the impedance nor recording properties of the electrodes changed on neighboring microelectrode sites that were not rejuvenated. In the equivalent circuit model, we found a transient increase in conductivity, the majority of which corresponded to a decrease in the tissue resistance component (44%/spl plusmn/7%). These findings suggest that rejuvenation may be an intervention strategy to prolong the functional lifetime of chronically implanted microelectrodes.     

Analysis, design, and implementation of an active clamp forward converter with synchronous rectifier

The system analysis, circuit design, and implementation of active clamp based forward converter with synchronous rectifier are presented in this paper. To release the energy stored in the leakage inductor and to minimize the spike voltage at the transformer primary side, active clamp circuit included one clamp switch and one clamp capacitor is adopted in the circuit. Based on the partial resonance with the output capacitor of switch and the leakage inductor of transformer, the main switch is turned on at zero voltage switching (ZVS). The clamp switch is also operated at ZVS operation based on the resonance of leakage inductor and clamp capacitor. The synchronous switches are used at the secondary side to further reduce the conduction losses. The experimental results based on the laboratory prototypes are presented to verify the circuit performance.     

Learning from Constraints for Formal Property Checking

Constraints are commonly used in both simulation and formal verification in order to specify expected input conditions and state transitions. Constraint solving is a process to determine input vectors which satisfy the set of constraints during constrained random simulation. Even though constraints are used in formal property checking to restrict the search space, constraint solving has never had direct application to formal property checking. There are often many simple, yet powerful, invariants that can be learned from constraint solving during constrained random simulation. These invariants are shown in this paper to significantly simplify the formal verification problem. We use approximate constraint solving to compute an approximate set of valid input vectors. The approximate set of valid input vectors are a strict superset of the set of all legal input vectors. We use BDD techniques to compute these input vectors during constrained random simulation, then process the resulting BDDs for learning invariants which can be used during formal property checking. This paper presents efficient BDD algorithms to learn invariants from the BDDs generated from approximate constraint solving. We also present how these learned invariants can be applied to the formal property checking. Experimental results show that invariants learned during constraint solving can significantly improve the performance of formal property checking with many industrial designs.     

High field transport in GaAs,InP and InAs

Calculations of the steady state and transient electron drift velocities and impact ionization rate are presented for GaAs, InP and InAs based on a Monte Carlo simulation using a realistic band structure derived from an empirical pseudopotential. The impact ionization results are obtained using collision broadening of the initial state and are found to fit the experimental data well through a wide range of applied fields. In InP the impact ionization rate is much lower than in GaAs and no appreciable anisotropy has been observed. This is due in part to the larger density of states in InP and the corresponding higher electron-phonon scattering rate. The transient drift velocities are calculated under the condition of high energy injection. The results for InP show that higher velocities can be obtained over 1000–1500 Å device lengths for a much larger range of launching energies and applied electric fields than in GaAs. For the case of InAs, due to the large impact ionization rate, high drift velocities can be obtained since the ionization acts to limit the transfer of electrons to the satellite minima. In the absence of impact ionization, the electrons show the usual runaway effect and transfer readily occurs, thus lowering the drift velocity substantially.