A Built-in Self-Test Scheme with Diagnostics Support for Embedded SRAM

In this paper we propose a novel built-in self-test (BIST) design for embedded SRAM cores. Our contribution includes a compact and efficient BIST circuit with diagnosis support and an automatic diagnostic system. The diagnosis module of our BIST circuit can capture the error syndromes as well as fault locations for the purposes of repair and fault/failure analysis. In addition, our design provides programmability for custom March algorithms with lower hardware cost. The combination of the on-line programming mode and diagnostic system dramatically reduces the effort in design debugging and yield enhancement. We have designed and implemented test chips with our BIST design. Experimental results show that the area overhead of the proposed BIST design is only 2.4% for a 128 KB SRAM, and 0.65% for a 2 MB one.     

Engineering Gold Nanotubes with Controlled Length and Near‐Infrared Absorption for Theranostic Applications

Important aspects in engineering gold nanoparticles for theranostic applications include the control of size, optical properties, cytotoxicity, biodistribution, and clearance. In this study, gold nanotubes with controlled length and tunable absorption in the near‐infrared (NIR) region have been exploited for applications as photothermal conversion agents and in vivo photoacoustic imaging contrast agents. A length‐controlled synthesis has been developed to fabricate gold nanotubes (NTs) with well‐defined shape (i.e., inner void and open ends), high crystallinity, and tunable NIR surface plasmon resonance. A coating of poly(sodium 4‐styrenesulfonate) (PSS) endows the nanotubes with colloidal stability and low cytotoxicity. The PSS‐coated Au NTs have the following characteristics: i) cellular uptake by colorectal cancer cells and macrophage cells, ii) photothermal ablation of cancer cells using single wavelength pulse laser irradiation, iii) excellent in vivo photoacoustic signal generation capability and accumulation at the tumor site, iv) hepatobiliary clearance within 72 h postintravenous injection. These results demonstrate that these PSS‐coated Au NTs have the ideal attributes to develop their potential as effective and safe in vivo imaging nanoprobes, photothermal conversion agents, and drug delivery vehicles. To the best of knowledge, this is the first in vitro and in vivo study of gold nanotubes.     

公共ATM网络的要求

本文介绍了ＡＴＭ（异步转移模式）在公共网络中的作用，ＡＴＭ在公共网络中的发展方向，最后着重讨论了公共ＡＴＭ网络的要求。     

Exploiting the Terahertz Band for Radionavigation

This paper demonstrates the feasibility of GPS-like ranging at terahertz (THz) frequencies. It is well established that GPS carrier signals are vulnerable to jamming via radio-frequency interference (RFI). As a result, there is a need for alternative radionavigation systems. THz signals offer a compelling option. Because of their high frequency (roughly ×100 higher than GPS), THz signals can be used to make highly precise range measurements. In addition, the large separation between the GPS and THz frequencies means that interference at GPS frequencies is very unlikely to impact the THz band. This paper lays the groundwork for a GPS-like ranging capability at THz frequencies. To this end, we identify key differences between THz hardware and GPS (radio frequency) hardware; we experimentally evaluate performance of a 0.30-THz system on a compact outdoor test range, and we introduce a measurement error model that highlights the distinctive role that multipath interference plays at THz frequencies.     

Doping efficiency and energy-level scheme in C60F48-doped zinc–tetraphenylporphyrin films

High resolution synchrotron-based core level spectroscopy was used to examine the energy level alignment at the interface of zinc–tetraphenylporphyrin films doped by the surface acceptor C₆₀F₄₈. Two distinct fluorofullerene charge states were identified, corresponding to ionized and neutral molecules, and their relative concentration as a function of coverage was used to evaluate the probability of occupation of the acceptor lowest unoccupied molecular orbital (LUMO). From an initial acceptor energy of ?0.25 eV, the C₆₀F₄₈ LUMO shifts upwards with coverage due to a doping-induced interfacial dipole potential, and stabilization of the LUMO at an energy 0.45 eV above the Fermi energy was obtained. While the energy difference upon saturation is consistent with the results obtained for other donor–acceptor systems that have been interpreted as Fermi level pinning, the present work shows that the energy offset is a direct consequence of the interplay between Fermi–Dirac statistics in combination with the interfacial dipole potential.     

双模渐入迷人眼——两款最新的双模手机

中国联通“世界风”的双模手机业务也推出一段日子了。CDMA/GSM左右逢源本是一件普天同庆的事，但由于机型的匮乏，业务尚末完善，使得双模手机一直给人雷声大雨点小的感觉。但这并未影响联通进行双模推广的步伐，一些最新的双模手机都在陆续的推出，各大厂商也是年初陆续发布了旗下最新的产品。本次《数码》率先拿到了两款最新的双模手机，分别是由宇龙通信公司出品的酷派（CoolPad）858和三星公司最新推出的W19。我们将会在下面的内容里作最详尽的评测。     

Minimal cost one-dimensional linear hybrid cellular automata of degree through 500

This letter is a supplement of the table of the minimal cost one-dimensional linear hybrid cellular automata with the maximum length cycle by Zhang, Miller, and Muzio [IEE Electronics Letters, 27(18):1625–1627, August 1991].This work was supported in part by Research Grants and Postgraduate Scholarships from the Natural Sciences and Engineering Research Council of Canada and by an equipment loan from the Canadian Microelectronics Corporation.     

Quantum‐Tunneling Metal‐Insulator‐Metal Diodes Made by Rapid Atmospheric Pressure Chemical Vapor Deposition

A quantum‐tunneling metal‐insulator‐metal (MIM) diode is fabricated by atmospheric pressure chemical vapor deposition (AP‐CVD) for the first time. This scalable method is used to produce MIM diodes with high‐quality, pinhole‐free Al₂O₃ films more rapidly than by conventional vacuum‐based approaches. This work demonstrates that clean room fabrication is not a prerequisite for quantum‐enabled devices. In fact, the MIM diodes fabricated by AP‐CVD show a lower effective barrier height (2.20 eV) at the electrode–insulator interface than those fabricated by conventional plasma‐enhanced atomic layer deposition (2.80 eV), resulting in a lower turn on voltage of 1.4 V, lower zero‐bias resistance, and better asymmetry of 107.     

Making BaZrS3 Chalcogenide Perovskite Thin Films by Molecular Beam Epitaxy

The making of BaZrS₃ thin films by molecular beam epitaxy (MBE) is demonstrated. BaZrS₃ forms in the orthorhombic distorted-perovskite structure with corner-sharing ZrS₆ octahedra. The single-step MBE process results in films smooth on the atomic scale, with near-perfect BaZrS₃ stoichiometry and an atomically sharp interface with the LaAlO₃ substrate. The films grow epitaxially via two competing growth modes: buffered epitaxy, with a self-assembled interface layer that relieves the epitaxial strain, and direct epitaxy, with rotated-cube-on-cube growth that accommodates the large lattice constant mismatch between the oxide and the sulfide perovskites. This work sets the stage for developing chalcogenide perovskites as a family of semiconductor alloys with properties that can be tuned with strain and composition in high-quality epitaxial thin films, as has been long-established for other systems including Si-Ge, III-Vs, and II-VIs. The methods demonstrated here also represent a revival of gas-source chalcogenide MBE.