Polarising fibre coupler with high extinction ratio

Fused polarising fibre couplers have been fabricated using single-polarisation single-mode fibres. When circularly polarised light is fed into the coupler, one of the two orthogonal polarisation modes suffers strong attenuation, and only one polarisation mode couples in the fused biconical taper region. The extinction ratio of the coupler is 41 dB at a wavelength ? = 1.3 ?m with a coupling ratio of 48:52.     

Room temperature pulsed operation of 1.5 μm GaInAsP/InPvertical-cavity surface-emitting laser

Room-temperature pulsed operation of a GaInAsP/InP vertical-cavity surface-emitting laser diode (VCSELD) with an emission wavelength near 1.55 μm is reported. A double heterostructure with a 34-pair GaInAsP (λ_g=1.4 μm)/InP distributed Bragg reflector (DBR) was grown by metalorganic chemical vapor deposition (MOCVD). The measured reflectivity of the semiconductor DBR is over 97% and threshold current is 260 mA for a 40-μmφ device with a 0.88-μm-thick active layer. Threshold current density is as low as 21 kA/cm² at room temperature     

Effects of uni-axial mechanical stress on IGBT characteristics

This paper describes the impacts of mechanical stress on vertical power devices. The stress dependence of the DC characteristics of trench insulated gate bipolar transistors (IGBTs) was measured. The experimental results could be reproduced by the device simulation, which included stress dependence models of the carrier mobility and the band gap. We found that the stress dependence of the on-state voltage mainly arose from the MOSFET portion of the IGBT. Using the device simulation, we estimated the effects of mechanical stress on the surge voltage and the saturation current, which give us the important information for designing a power module with higher ruggedness.     

Characterization of amorphous Ni-Si binary alloy films by flash evaporation

We previously reported on an extremely small temperature coefficient of resistivity (TCR) of thin amorphous Ni-Si film resistors fabricated by new flash evaporating method, which have a wide range of resistivity.¹ In the present paper, we describe the structural and chemical properties of these films for the purpose of clarifying the cause of resistive change of films resulting from heat treatment. X-ray diffraction patterns show that Ni-Si films with greater than 20 wt.% Si remains predominantly amorphous after heat treatment. Changes in composition and binding energy of the films resulting from heat treatment are measured by means of XPS. Electrical characteristics are also investigated as a function of Si concentration and temperature. The resistance variations resulting from heat treatment are found to originate from a structural change. The activation energy needed for this change is obtained by analyzing the extent of change during isothermal heating and found to vary from 1 eV to 2.5 eV with increasing Si content from 20 wt.% to 80 wt.%.     

Polarization-independent low-crosstalk polymeric AWG-based tunablefilter operating around 1.55 μm

A wavelength tunable optical filter is a beneficial optical component for dense wavelength-division-multiplexed systems. We report a high-performance polymeric arrayed-waveguide grating (AWG)-based tunable filter made of cross-linked silicone and operating around 1.55 μm. This filter exhibited a TE-TM polarization shift of <0.03, a crosstalk of <-35 dB, an insertion loss of <3 dB, and an 8.8-nm tuning range in the 25°C-75°C temperature region     

High bit rate and programmable multiwavelength generator based onRaman soliton effect in DSF

A wavelength tunable multiwavelength pulse source with clock rate tunability is described. A tuning range of 32 nm and multiwavelength generation were achieved at a 10 GHz clock rate and a quasi-320 GHz OTDM signal. The device consists of a programmable PLC multiplexer and employs amplitude-to-wavelength conversion based on the Raman soliton effect     

Self-routing planar network for guided-wave optical switching systems

An N*N self-routing planar network suitable for fabricating optical space switches on lithium niobate substrate is presented. The network has O(N/sup 2/) cross points, good modularity and expandability. It also has no waveguide crossovers and no differential attenuation between any of the input and output pairs. A self-routing control can be applied to this network, which is indispensable for ATM switching systems.<>     

Dispersion slope equaliser using bend-induced positive dispersionslope in coiled pure-silica fibre

The dispersion slope of a dispersion-shifted fibre has been successfully equalised by using a bend-induced positive dispersion slope in a singlemode fibre. We realised the bent fibre dispersion slope equaliser by using a 1.3 μm zero-dispersion pure silica core fibre (PSM). This equaliser provides a dispersion slope of -12.54 ps/nm² /km in the 1.5 μm region     

Conceptual design of rain radar for the tropical rainfall measuring mission

Specifications for a spaceborne rain radar for tropical rainfall measurement are described. A spaceborne rain radar has problems peculiar to rain observation from space. The radar must have a fast scanning mechanism to cover a large swath. Very weak rain echoes compared to the sea or land surface signal must be detected. These capabilities must be attained under the severe power consumption and mass limitations of the satellite bus. The fast scanning requirement forces application of an electrically scanning mechanism. This requirement also causes a severe limitation of the available number of independent samples. The requirement for weak rain echoes excludes application of the pulse compression technique, which is a very conventional technique for other active microwave sensors on board satellites. Under these constraints, a rain radar with an electrically scanning planar antenna at 13-8 GHz is proposed.