Fixed Point Implementation of the QCELP Speech Coder

The Qualcomm code excited linear prediction (QCELP) speech coder was adopted to increase the capacity of the CDMA Mobile System (CMS). In this paper, we implemented the QCELP speech coding algorithm by using TMS320C50 fixed point DSP chip. Also the fixed point simulation was done with C language. The computation complexity of QCELP on TMS320C50 was about 33 MIPS and program size was 10k words and data memory was 4k words. In the normal call test on the CMS, where mobile to mobile call test was done in the bypass mode without double vocoding, mean opinion score for the speech quality was 3.11.     

A Novel and Efficient Feature Extraction Method for Iris Recognition

With a growing emphasis on human identification, iris recognition has recently received increasing attention. Iris recognition includes eye imaging, iris segmentation, verification, and so on. In this letter, we propose a novel and efficient iris recognition method which employs a cumulative‐sum‐based grey change analysis. Experimental results demonstrate that the proposed method can be used for human identification in efficient manner.     

Few‐Layered WS2 Nanoplates Confined in Co,N‐Doped Hollow Carbon Nanocages: Abundant WS2 Edges for Highly Sensitive Gas Sensors

Edges of 2D transition metal dichalcogenides (TMDs) are well known as highly reactive sites, thus researchers have attempted to maximize the edge site density of 2D TMDs. In this work, metal‐organic framework (MOF) templates are introduced to synthesize few‐layered WS₂ nanoplates (a lateral dimension of ≈10 nm) confined in Co, N‐doped hollow carbon nanocages (WS₂_Co‐N‐HCNCs), for highly sensitive NO₂ gas sensors. WS₂ precursors are assembled in the surface cavity of Co‐based zeolite imidazole framework (ZIF‐67) and subsequent pyrolysis produced WS₂_Co‐N‐HCNCs. During the pyrolysis, the carbonized ZIF‐67 are doped by Co and N elements, and the growth of WS₂ is effectively suppressed, creating few‐layered WS₂ nanoplates functionalized Co‐N‐HCNCs. The WS₂_Co‐N‐HCNCs exhibit outstanding NO₂ sensing characteristics at room temperature, in terms of response (48.2% to 5 ppm), selectivity, response and recovery speed, and detection limit (100 ppb). These results are attributed to the enhanced adsorption and desorption kinetics of NO₂ on abundant WS₂ edges, confined in the gas permeable HCNCs. This work opens up an efficient way for the facile synthesis of edge abundant few‐layered TMDs combined with porous carbon matrix via MOF templating route, for applications relying on highly active sites.     

In Situ Formation of Copper‐Based Hosts Embedded within 3D N‐Doped Hierarchically Porous Carbon Networks for Ultralong Cycle Lithium–Sulfur Batteries

Lithium–sulfur (Li–S) batteries are promising energy storage systems due to their large theoretical energy density of 2600 Wh kg^?1 and cost effectiveness. However, the severe shuttle effect of soluble lithium polysulfide intermediates (LiPSs) and sluggish redox kinetics during the cycling process cause low sulfur utilization, rapid capacity fading, and a low coulombic efficiency. Here, a 3D copper, nitrogen co‐doped hierarchically porous graphitic carbon network developed through a freeze‐drying method (denoted as 3D Cu@NC‐F) is prepared, and it possesses strong chemical absorption and electrocatalytic conversion activity for LiPSs as highly efficient sulfur host materials in Li–S batteries. The porous carbon network consisting of 2D cross‐linked ultrathin carbon nanosheets provides void space to accommodate volumetric expansion upon lithiation, while the Cu, N‐doping effect plays a critical role for the confinement of polysulfides through chemical bonding. In addition, after sulfuration of Cu@NC‐F network, the in situ grown copper sulfide (Cu_xS) embedded within Cu_xS@NC/S‐F composite catalyzes LiPSs conversion during reversible cycling, resulting in low polarization and fast redox reaction kinetics. At a current density of 0.1 C, the Cu_xS@NC/S‐F composites' electrode exhibits an initial capacity of 1432 mAh g^?1 and maintains 1169 mAh g^?1 after 120 cycles, with a coulombic efficiency of nearly 100%.     

Improving Radio Frequency Transmission Properties of Graphene via Carrier Concentration Control toward High Frequency Transmission Line Applications

Graphene has been gradually studied as a high‐frequency transmission line material owing to high carrier mobility with frequency independence up to a few THz. However, the graphene‐based transmission lines have poor conductivity due to their low carrier concentration. Here, it is observed that the radio frequency (RF) transmission performance could be severely hampered by the defect‐induced scattering, even though the carrier concentration is increased. As a possible solution, the deposition of the amorphous carbon on the graphene is studied in the high‐frequency region up to 110 GHz. The DC resistance is reduced by as much as 60%, and the RF transmission property is also enhanced by 3 dB. Also, the amorphous carbon covered graphene shows stable performance under a harsh environment. These results prove that the carrier concentration control is an effective and a facile method to improve the transmission performance of graphene. It opens up the possibilities of using graphene as interconnects in the ultrahigh‐frequency region.     

Compact LDD nMOSFET degradation model

In this paper, we present a compact degraded I-V model for submicron lightly-doped drain (LDD) MOSFET's. The analytical and physics-based model was developed using the drift equation and considering the nonuniform spatial hot-carrier-induced interface states and the detailed LDD structure. It can be used to calculate fresh channel electric field and drain current by turning off the effect of hot-carrier-induced interface states. Using the fresh electric field in conjunction with a simplified energy balance equation, the nonuniform spatial distribution of induced interface states ran be calculated. By incorporating this distribution into the degraded current model, we can describe the damaged I-V characteristics and channel electric fields as a function of stress time. The model includes the effects of series resistances and carrier velocity saturation. It can be used to calculate time-dependent degraded drain current, and is a time-saving CAD model     

Probing stress effects in HfO2 gate stacks with time dependent measurements

Effects of constant voltage stress (CVS) on gate stacks consisting of an ALD HfO₂ dielectric with various interfacial layers were studied with time dependent sensing measurements: DC I–V, pulse I–V, and charge pumping (CP) at different frequencies. The process of injected electron trapping/de-trapping on pre-existing defects in the bulk of the high-κ film was found to constitute the major contribution to the time dependence of the threshold voltage (V_t) shift during stress. The trap generation observed with the low frequency CP measurements is suggested to occur within the interfacial oxide layer or the interfacial layer/high-κ interface, with only a minor effect on V_t.     

Low-power CSD linear phase FIR filter structure using verticalcommon sub-expression

A high-speed/low-power canonic signed digit (CSD) linear phase finite impulse response (FIR) filter structure using vertical common sub-expression is proposed. In the conventional linear phase CSD filter, the horizontal common sub-expression method (see Hartley, 1996) has been widely utilised due to the inherent symmetrical filter coefficients. However, use has been made of the fact that the most significant bits of adjacent filter coefficients in the linear phase filter are also equal since they have mostly similar values. Through the example, it is shown that the proposed structure is more efficient in the case where bit precision of implementation is lower