全文获取类型
收费全文 | 761篇 |
免费 | 10篇 |
专业分类
电工技术 | 13篇 |
化学工业 | 111篇 |
金属工艺 | 56篇 |
机械仪表 | 11篇 |
建筑科学 | 10篇 |
能源动力 | 10篇 |
轻工业 | 54篇 |
水利工程 | 6篇 |
石油天然气 | 1篇 |
无线电 | 103篇 |
一般工业技术 | 131篇 |
冶金工业 | 238篇 |
原子能技术 | 8篇 |
自动化技术 | 19篇 |
出版年
2022年 | 10篇 |
2021年 | 12篇 |
2020年 | 1篇 |
2019年 | 1篇 |
2018年 | 7篇 |
2017年 | 6篇 |
2016年 | 8篇 |
2015年 | 6篇 |
2014年 | 12篇 |
2013年 | 24篇 |
2012年 | 19篇 |
2011年 | 30篇 |
2010年 | 23篇 |
2009年 | 22篇 |
2008年 | 27篇 |
2007年 | 26篇 |
2006年 | 21篇 |
2005年 | 32篇 |
2004年 | 23篇 |
2003年 | 23篇 |
2002年 | 20篇 |
2001年 | 30篇 |
2000年 | 20篇 |
1999年 | 24篇 |
1998年 | 96篇 |
1997年 | 56篇 |
1996年 | 36篇 |
1995年 | 19篇 |
1994年 | 24篇 |
1993年 | 18篇 |
1992年 | 6篇 |
1991年 | 10篇 |
1990年 | 6篇 |
1989年 | 9篇 |
1988年 | 12篇 |
1987年 | 10篇 |
1986年 | 4篇 |
1985年 | 7篇 |
1984年 | 5篇 |
1983年 | 3篇 |
1982年 | 2篇 |
1980年 | 2篇 |
1979年 | 1篇 |
1978年 | 5篇 |
1977年 | 2篇 |
1976年 | 4篇 |
1975年 | 3篇 |
1972年 | 1篇 |
1969年 | 1篇 |
1968年 | 1篇 |
排序方式: 共有771条查询结果,搜索用时 33 毫秒
71.
Comparative study on the bio-electrochemical denitrification equipped with a multi-electrode system.
Three biofilm-electrode reactors (BERs) with multiple cathodes were applied to investigate the effect of electrode configuration and flow direction on denitrification under laboratory-scale conditions. The distribution of nitrate, DO and pH varied among applied BERs, as a consequence of a different electrode position in the reactors, bringing about a difference in the performance. Flow-through configuration of electrodes with a downstream anode appears to be the most suitable configuration since nitrite did not accumulate in the effluent only in this experiment and the current-denitrification efficiency at low current densities was high. Thus, it is recommended for a low-loading operation. 相似文献
72.
Akihiko Wakai Keizo Ugai Atsuo Onoue Seiichiro Kuroda Kunihiro Higuchi 《Soils and Foundations》2010,50(4):533-545
The damage caused by an earthquake-induced landslide can generally be classified as either a limited deformation or a catastrophic failure. From an engineering point of view, the latter can be much more dangerous because the sliding mass may continue moving until it collides with another object. If a catastrophic failure occurs near a river, the debris may block the river, causing serious damage to the adjacent area. Therefore, examination of the mechanism of such catastrophic slope failures is important with respect to the mitigation of earthquake disasters in mountainous districts, although numerical modeling of such phenomena is rather difficult. In the present study, a new numerical model is developed to simulate an earthquake-induced catastrophic landslide that occured at a typical dip slope, namely, the Yokowatashi Landslide in Japan. In this case, the upper part of the bedrock on the planer tectonic dip surface slid more than 70 m. Only shear-strength degradation at the bedding plane could cause such a long-distance traveling failure. To investigate the strain-softening characteristics of the materials that filled the bedding plane, a series of laboratory tests involving undisturbed block samples was performed. The measured stress-displacement relationships under cyclic loading were numerically modeled as a newly proposed elasto-plastic constitutive model to be used in numerical simulations of landslide, based on the dynamic finite element method. The observed phenomena were appropriately simulated by the proposed method. The mechanism of catastrophic failure is discussed in detail in this paper in order to clarify the relationships between the strain-softening characteristics and the global slope stability. Our newly proposed method to evaluate the possibility of a catastrophic failure was applied to the landslide, and the moment when the slope becomes unstable was able to be predicted. The results confirm that the proposed method can predict the catastrophic failure of a slope. 相似文献
73.
T Kuroda M Ueda M Nakano M Saeki 《Canadian Metallurgical Quarterly》1994,29(2):288-92; discussion 292-3
74.
Kouichi Asakura Ayuko Iida Ryoichi Kitagata Atsushi Yoshida Shuichi Osanai Akihiro Kuroda 《Journal of surfactants and detergents》2001,4(4):375-378
Adsorption properties of two types of dimethylpolysiloxane backbone derivatives, perfluoroalkyl polyoxyethylenated dimethylpolysiloxane (FPD) and polyoxyethylenated dimethylpolysiloxane (PD), onto keratin surfaces were investigated. Both polymers are amphiphilic, since they possess hydrophilic polyoxyethylene groups. FPD contains a perfluoroalkyl group that provides both water-and oil-repellent properties, whereas PD lacks these groups. Adsorption properties of these polymers onto keratin surfaces are considered a good index to evaluate these compounds as nonionics used in hair-coating agents, since keratin is a major component of hair. FPD was more likely to be adsorbed and less likely to be eliminated from the keratin surface than PD. Once FPD had been adsorbed onto the keratin surface, it was very slowly washed from the surface when it was immersed in stationary water, whereas PD polymers were quickly washed from the keratin surface. Even in running water, rapid elimination of FPD was not observed. The strong resistance to loss of FPD after washing with a large quantity of water may be due to the water-repellent nature of the perfluoroalkyl groups. As a comparison, FPD adsorption onto a glass surface was also investigated. The affinity to the glass surface was found to be less than to the keratin surface. 相似文献
75.
We report on the recovery of population inversion in a CW-pumped erbium-doped fiber amplifier. Spontaneous emissions after the input of signal pulses were temporally resolved. The recovery time for population inversion was estimated to be a few hundred microseconds. The pump power and signal width dependences of the recovery were measured. We discuss the dependences by applying an analytical formula derived for the temporal evolution of population inversion. 相似文献
76.
Kuroda S. Harada N. Katakami T. Mimura T. Abe M. 《Electron Devices, IEEE Transactions on》1989,36(10):2196-2203
The authors studied the nonalloyed ohmic characteristics of HEMTs (high electron mobility transistors). At high integration levels, nonalloyed ohmic contacts were found to have two advantages: an extremely short ohmic length with low parasitic source series resistance and direct connection between the source/drain and gate with the same metal. The propagation delay in a ring oscillator with a single-metal source/drain and gate formed simultaneously was 37 ps/gate (L g=0.9 μm). The very short ohmic metal contacts and just three contact holes made it possible to reduce the memory cell area greatly. The cell is 21.5×21.5 μm2, one of the smallest ever reported for a GaAs-based static RAM. Using smaller load HEMTs or resistor loads in the memory cell, combined with nonalloyed ohmic technology with quarter- or subquarter-micrometer-gate HEMTs it is possible to fabricate a very-high-speed LSI such as a 64-kb static RAM with a reasonable chip size 相似文献
77.
C Ogino Y Negi T Matsumiya K Nakaoka A Kondo S Kuroda S Tokuyama U Kikkawa T Yamane H Fukuda 《Canadian Metallurgical Quarterly》1999,125(2):263-269
Phospholipase D (PLD), secreted into the culture medium of an actinomycete, Streptoverticillium cinnamoneum, has been purified to homogeneity and characterized. The Stv. cinnamoneum PLD efficiently catalyzes both the hydrolysis and transphosphatidylation of various phospholipids, including phosphatidylethanolamine (PE), phosphatidylcholine (PC), and phosphatidylserine (PS). However, the substrate specificity differs between the two reactions; PE serves as the most preferred substrate for the hydrolysis, but PC and PS are better substrates than PE for the transphosphatidylation. In addition, the transphosphatidylation but not the hydrolysis of PE and PC is markedly activated on the addition of metal ions, especially Al3+. Nucleotide and amino acid sequence determination of the Stv. cinnamoneum PLD revealed the presence of common structural motifs identified in all PLD sequences from various species. 相似文献
78.
High-speed n-InAlAs/InGaAs HEMT large-scale integrated circuits must have uniform device parameters. A selectively dry-etched n+ -GaAs/N-InAlAs/InGaAs HEMT which has a very uniform threshold voltage is discussed. Despite the high dislocation density at the n+-GaAs layer, its performance is excellent. For a gate length of 0.92 μm, the maximum transconductance of the HEMT is 390 mS/mm. The measured current-gain cutoff frequency is 23.7 GHz, and the maximum frequency of oscillation is 75.0 GHz. The standard deviation of the threshold voltage across a 2-in wafer is as low as 13 mV 相似文献
79.
80.