Bio-Inspired Artificial Fast-Adaptive and Slow-Adaptive Mechanoreceptors With Synapse-Like Functions

Development of artificial mechanoreceptors capable of sensing and pre-processing external mechanical stimuli is a crucial step toward constructing neuromorphic perception systems that can learn and store information. Here, bio-inspired artificial fast-adaptive (FA) and slow-adaptive (SA) mechanoreceptors with synapse-like functions are demonstrated for tactile perception. These mechanoreceptors integrate self-powered piezoelectric pressure sensors with synaptic electrolyte-gated field-effect transistors (EGFETs) featuring a reduced graphene oxide channel. The FA pressure sensor is based on a piezoelectric poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) thin film, while the SA pressure sensor is enabled by a piezoelectric ionogel with the piezoelectric-ionic coupling effect based on P(VDF-TrFE) and an ionic liquid. Changes in post-synaptic current are achieved through the synaptic effect of the EGFET by regulating the amplitude, number, duration, and frequency of tactile stimuli (pre-synaptic pulses). These devices have great potential to serve as artificial biological mechanoreceptors for future artificial neuromorphic perception systems.     

Room-Temperature-Processable Highly Reliable Resistive Switching Memory with Reconfigurability for Neuromorphic Computing and Ultrasonic Tissue Classification

Reversible metal-filamentary mechanism has been widely investigated to design an analog resistive switching memory (RSM) for neuromorphic hardware-implementation. However, uncontrollable filament-formation, inducing its reliability issues, has been a fundamental challenge. Here, an analog RSM with 3D ion transport channels that can provide unprecedentedly high reliability and robustness is demonstrated. This architecture is realized by a laser-assisted photo-thermochemical process, compatible with the back-end-of-line process and even applicable to a flexible format. These superior characteristics also lead to the proposal of a practical adaptive learning rule for hardware neural networks that can significantly simplify the voltage pulse application methodology even with high computing accuracy. A neural network, which can perform the biological tissue classification task using the ultrasound signals, is designed, and the simulation results confirm that this practical adaptive learning rule is efficient enough to classify these weak and complicated signals with high accuracy (97%). Furthermore, the proposed RSM can work as a diffusive-memristor at the opposite voltage polarity, exhibiting extremely stable threshold switching characteristics. In this mode, several crucial operations in biological nervous systems, such as Ca²⁺ dynamics and nonlinear integrate-and-fire functions of neurons, are successfully emulated. This reconfigurability is also exceedingly beneficial for decreasing the complexity of systems—requiring both drift- and diffusive-memristors.     

CBOE Volatility Index Forecasting under COVID-19: An Integrated BiLSTM-ARIMA-GARCH Model

After the outbreak of COVID-19, the global economy entered a deep freeze. This observation is supported by the Volatility Index (VIX), which reflects the market risk expected by investors. In the current study, we predicted the VIX using variables obtained from the sentiment analysis of data on Twitter posts related to the keyword “COVID-19,” using a model integrating the bidirectional long-term memory (BiLSTM), autoregressive integrated moving average (ARIMA) algorithm, and generalized autoregressive conditional heteroskedasticity (GARCH) model. The Linguistic Inquiry and Word Count (LIWC) program and Valence Aware Dictionary for Sentiment Reasoning (VADER) model were utilized as sentiment analysis methods. The results revealed that during COVID-19, the proposed integrated model, which trained both the Twitter sentiment values and historical VIX values, presented better results in forecasting the VIX in time-series regression and direction prediction than those of the other existing models.     

Analysis of issues in gate recess etching in the InAlAs/InGaAs HEMT manufacturing process

We have developed an InAlAs/InGaAs metamorphic high electron mobility transistor device fabrication process where the gate length can be tuned within the range of 0.13 μm–0.16 μm to suit the intended application. The core processes are a two-step electron-beam lithography process using a three-layer resist and gate recess etching process using citric acid. An electron-beam lithography process was developed to fabricate a T-shaped gate electrode with a fine gate foot and a relatively large gate head. This was realized through the use of three-layered resist and two-step electron beam exposure and development. Citric acid-based gate recess etching is a wet etching, so it is very important to secure etching uniformity and process reproducibility. The device layout was designed by considering the electrochemical reaction involved in recess etching, and a reproducible gate recess etching process was developed by finding optimized etching conditions. Using the developed gate electrode process technology, we were able to successfully manufacture various monolithic microwave integrated circuits, including low noise amplifiers that can be used in the 28 GHz to 94 GHz frequency range.