铝镁合金管道焊接工艺

通过对铝镁合金材料的焊接特性的分析 ,总结出内外两面成型且不加管道内衬的焊接施工工艺 ,以此来提高铝镁合金管道的焊接一次合格率     

Effects of thymectomy and glucocorticoid therapy on peripheral lymphocytes in myasthenia gravis

Clinical manifestations and peripheral blood lymphocyte subset changes were studied in patients with myasthenia gravis (MG) to elucidate the mechanism of clinical improvement following treatment, with thymectomy (Tx) or glucocorticoid (GC) therapy. The changes found were: 1. There was a significant increase in percentages of CD3+, CD29+ CD4+ cells and CD4/CD8 ratio and a significant decrease in percentages of CD8+ and CD16,56+ cells in patients who had never been treated with any immune therapy. 2. After Tx or GC therapy, CD3+ and CD4+, CD29+ cells were decreased, but the number CD19+ and CD16, CD56 cells did not change. 3. Tx had a special effect on CD8+ cells. In most of the patients who showed clinical improvement after Tx, CD8+ cells were increased and CD4/CD8 ratio wad decreased. 4. Anti-acetylcholine receptor (AChRAb) titers were markedly decreased after GC therapy. These results indicate that there were obvious abnormalities in cell-mediated immunity in addition to those in humoral immunity in myasthenia gravis. These abnormalities tended to be normalized after Tx or GC therapy.     

P-N double quantum well resonant interband tunneling diode withpeak-to-valley current ratio of 144 at room temperature

The current-voltage characteristics of the P-N double quantum well resonant interband tunneling (RIT) diodes in InAlAs-InGaAs system have been improved in this letter. The peak-to-valley current ratio (PVCR) is as high as 144 at room temperature. As we know, this is the highest room temperature PVCR ever reported in any tunneling devices. Moreover, the influence of the central barrier thickness varying from 10 Å to 30 Å on the device characteristics is also studied     

Calculation of the partial capacitance in a system of conductorswithin the calculable resistor

A method for calculating the partial capacitance (PC) in a multiconductor system (a system of conductors) consisting of n conductors parallel to the shield axis inside earthed cylindrical shields is discussed. Formulas for the PC in SI units are given. The PC is defined as the conductor-to-conductor capacitance and conductor-to-shield capacitance. These methods and formulas are suitable for calculating the PC of Gibbings' resistors with a calculable ac/dc resistance ratio     

Preparation and optical properties of CdxHg1-xTe doped silica glass

In this paper, the Cd_xHg_1-xTe (x=1-0.7) doped silica glass was prepared through two step sol-gel process and in-situ growth technique from tetraethoxysilane (TEOS), cadmium acetate, mercury acetate and telluric acid. The influence of various factors on the glass was studied. The structure of the microcrystals was investigated by XRD. The absorption and transmittance spectrum of the composite showed that the shift of absorption edge was in conformity with the quantum size effect. The third-order nonlinear optical susceptibility χ⁽³⁾ was measured by the degenerate four wave mixing (DFWM). The values of χ⁽³⁾ was in the range of 10^-11-10^-12 MO esu at wavelength of 1.06 μm.     

秦山核电厂蒸汽发生器水位控制试验

简要介绍了蒸汽发生器水位控制系统的运行方式和试验方法。试验项目包括旁通阀控制试验、主给水阀控制试验和旁通阀与主给水阀的切换试验。文中给出了试验结果,即在液位扰动和核动率扰动时,蒸汽发生器液位的变化过程。经过两个月的运行和瞬态试验,证明蒸汽发生器水位控制系统满足设计要求。     

化工重大技术装备工作"十五"的成绩与"十一五"的任务

重大技术装备的制造水平是一个国家综合实力的直接体现,因此从上个世纪八十年代初开始,历届国务院领导人均兼任国家重大技术装备领导小组组长,通过推进重大技术装备的发展,促进     

Low RF noise and power loss for ion-implanted Si having an improved implantation process

Very-low-transmission line noise of <0.25 dB at 18 GHz and low power loss /spl les/0.6 dB at 110 GHz have been measured on transmission lines fabricated on proton-implanted Si. In contrast, a standard Si substrate gave much higher noise of 2.5 dB and worse power loss of 5 dB. The good RF integrity of proton-implanted Si results from the high isolation impedance to ground, as analyzed by an equivalent circuit model. The proton implantation is also done after forming the transmission lines at a reduced implantation energy of /spl sim/4 MeV. This enables easier process integration into current VLSI technology.     

Flammability and thermal stability studies of ABS/Montmorillonite nanocomposite

Acrylonitrile–butadiene–styrene (ABS)/montmorillonite nanocomposites have been prepared using a direct melt intercalation technique by blending ABS and organophilic clay of two different particle sizes: OMTa (5 µm) and OMTb (38 µm). Their structure and flammability properties were characterized by X‐ray diffraction, high resolution electronic microscopy (HREM), thermogravimetric analysis (TGA) and cone calorimeter experiments. The results of HREM showed that ABS/5 wt% OMTa nanocomposite was a kind of intercalated–delaminated structure, while ABS/5 wt% OMTb nanocomposite was mainly an intercalated structure. The nanocomposites showed a lower heat release rate peak and higher thermal stability than the original ABS by TGA and cone calorimeter experiments. Also, the intercalated nanocomposite was more effective than an exfoliated–intercalated nanocomposite in fire retardancy. Copyright © 2003 Society of Chemical Industry     

High voltage (>1kV) and high current gain (32) 4H-SiC power BJTs using Al-free ohmic contact to the base

This letter reports the design and fabrication of 4H-SiC bipolar junction transistors with both high voltage (>1kV) and high dc current gain (/spl beta/=32) at a collector current level of I/sub c/=3.83A (J/sub c/=319 A/cm/sup 2/). An Al-free base ohmic contact has been used which, when compared with BJTs fabricated with Al-based base contact, shows clearly improved blocking voltage. A specific on-resistance of 17 m/spl Omega//spl middot/cm/sup 2/ has been achieved for collector current densities up to 289 A/cm/sup 2/.