EBPSK系统抗脉冲干扰性能研究

首先介绍了扩展的二元相移键控(EBPSK)调制波形及脉冲干扰模型,提出了一种简单的基于冲击滤波器和限幅的抗干扰传输模型,从理论上分析了该系统对抗脉冲干扰的优势.仿真实验表明,在严重的脉冲干扰情况下,EBPSK系统表现出超强的抗干扰能力,同时,也通过误码率曲线表明了基于限幅的系统模型的有效性,从而为超窄带的EBPSK系统迈入实际应用阶段奠定了基础.     

FPGA上抗侧信道攻击的密码算法实现

密码算法在运行时可能会受到侧信道攻击,抗侧信道攻击的FPGA密码算法实现是目前研究的一个热点。通过随机数保护关键数据的S盒移位掩码法被认为是一种有效的防御手段。采用该方式实现的密码算法在提高运行安全性的同时,可能会带来硬件资源开销的增加及加解密速度的降低。通过对SM4算法的实现表明,采用合适的实现方式时S盒移位掩码法抗侧信道攻击实现对算法硬件资源开销及加解密速度影响不是太大,具有一定的实用价值。     

一种高精度的电力巡检定位导航系统

文章介绍了利用现代通信技术和地理信息技术,针对电力巡检特殊要求开发出的一种基于气压海拔高度测量、支持通用分组无线业务(GPRS)无线双向通信与断点续传、地图可定制的高精度定位导航系统.阐述了该高精度定位导航系统的设计原则及其模块化功能,介绍了该系统相比于传统定位导航系统的优点,最后介绍了该系统的应用实例.     

入侵检测系统:原理、入侵隐藏与对策

入侵行为给基于网络的计算机信息系统的安全带来巨大威胁，入侵检测系统（IDS，Intrusion Detection System）作为重要的安全工具而成为研究的热点。文章首先介绍IDS的基本概念和组成，研究各类IDS的工作原理及其优缺点，然后分析当前难以对付的几种隐藏入侵迹象，逃避IDS检测的方法，并进一步探讨相应的对策，对IDS今后的发展方向提出了看法。     

纤维素酶固态发酵环境扫描电镜观察

纤维素酶压力脉动固态发酵周期（60h）比传统固态发酵周期缩短1/3，酶活（2036IU/g）比传统酶活（10.82IU/g）提高了一倍。利用环境扫描电镜观察压力脉动固态发酵与传统固态发酵微观动态过程表明，压力脉动固态培养的料层（9.0cm厚）上中下微生物生长状况均匀一致，且疏松；而传统固态发酵的料层中部几乎没有菌体生长。并且发现微生物产孢初期，其产酶即停止，压力脉动固态发酵在72h开始产生孢子，其产酶达到最高峰；而传统发酵在96h才出现大量的孢子。     

大型光电设备的电磁兼容设计

根据大型光电设备的特点,阐述它的组成和电磁兼容设计的流程,并详细介绍其结构和电气的电磁兼容设计方法.在电气的电磁兼容设计中,分别介绍了电源、单机印制板、布线和接地的电磁兼容设计.该项设计已经经过了实际测试验证,效果良好.     

2/spl times/4 optical add-drop module with no difference in propagation length

We developed a micromachined X-type 2/spl times/4 optical add-drop module (OADM) featuring no difference in propagation length. Four pairs of lensed fibers are aligned in "X" position, and four micromirrors are located between the pairs of optical fibers. The OADM was fabricated utilizing a silicon-on-insulator process. Electrostatic comb actuators can be driven up to 90 /spl mu/m to change the light path within 1 ms. The insertion loss and the on-off ratio were less than 3 and 70 dB, respectively. The loss uniformity in every channel was 1.5 dB.     

Monolithic SiGe Up‐/Down‐Conversion Mixers with Active Baluns

The purpose of this paper is to describe the implementation of monolithically matching circuits, interface circuits, and RF core circuits to the same substrate. We designed and fabricated on‐chip 1 to 6 GHz up‐conversion and 1 to 8 GHz down‐conversion mixers using a 0.8 µm SiGe hetero‐junction bipolar transistor (HBT) process technology. To fabricate a SiGe HBT, we used a reduced pressure chemical vapor deposition (RPCVD) system to grow a base epitaxial layer, and we adopted local oxidation of silicon (LOCOS) isolation to separate the device terminals. An up‐conversion mixer was implemented on‐chip using an intermediate frequency (IF) matching circuit, local oscillator (LO)/radio frequency (RF) wideband matching circuits, LO/IF input balun circuits, and an RF output balun circuit. The measured results of the fabricated up‐conversion mixer show a positive power conversion gain from 1 to 6 GHz and a bandwidth of about 4.5 GHz. Also, the down‐conversion mixer was implemented on‐chip using LO/RF wideband matching circuits, LO/RF input balun circuits, and an IF output balun circuit. The measured results of the fabricated down‐conversion mixer show a positive power conversion gain from 1 to 8 GHz and a bandwidth of about 4.5 GHz.     

Study of specific absorption rate (SAR) induced in two child head models and in adult heads using mobile phones

This paper gives a first comparison of specific absorption rate (SAR) induced in a child-sized (CS) head and an adult head using a dual-band mobile phone. In the second study, the visible human head is considered and comparison of SAR induced in a CS or child-like (CL) head and an adult head using a dual-band mobile phone is given. All the peaks of average SAR over a mass of 10 and 1 g in the head and the power budget are determined in the two comparisons using the finite-difference time-domain method. The differences between the results for adult and CS or CL heads are given at 900 and 1800 MHz. No important differences are noted for the peak SAR averaged over 10 g (SAR10 g), between the two adult head models, as well as between the two child head models. The peak SAR10 g in the brain of the CS or CL head is slightly more significant than that for the adult one.     

Floating-patch MEMS antennas on HRS substrate for millimetre-wave applications

Novel floating-patch micro-electro-mechanical system (MEMS) antennas are proposed for millimetre-wave applications. The floating-patch MEMS antennas are fabricated on a high resistivity silicon (HRS) substrate using surface micromachining technology. Simulation and experimental results for reflection coefficients and radiation patterns are presented.