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Annealing effects of a high-quality ZnTe substrate   总被引:1,自引:0,他引:1  
The sharp photoluminescence (PL) and optical-reflection spectra in the bandedge region of the high-quality nondoped ZnTe substrate (100) were observed at 4.2 K. Free exciton, associated with lower and upper polaritons (EXL and EXU) at 2.382 eV and 2.381 eV, respectively, were clearly observed. This meant that this substrate was high quality. The intensity of a bound exciton peak (2.375 eV), which is caused by a Zn vacancy, of a neutral acceptor decreased with an increase of the Zn vapor pressures.  相似文献   
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A detailed understanding of the conductance quantization and resistive switching phenomena in redox‐based memories is crucial for realizing atomic‐scale memory devices and for finding the adequate design principles on which they can be based. Here, the emergence of quantized conductance states and their correlation with resistive switching characteristics in polymer‐based atomic switches are investigated using combinations of current–voltage measurements and first‐principles density functional theory (DFT) simulations. Various conductance states, including integer and half‐integer multiples of a single atomic point contact and fractional conductance variations, are observed in an Ag/polyethylene oxide/Pt device under sweeping of bias voltage. Moreover, highly controllable and reproducible quantized conductance behaviors by tuning the voltage sweep rate and the sweep voltage range, suggesting well‐controlled formation of the atomic point contact, are demonstrated. The device also exhibits longer retention times for higher conductance states. The DFT simulations reveal the transmission eigenstate of geometrically optimized atomic point contact structures and the impact of the atomic configurations and structural stability on the conductance state, which also explains their resistive switching behaviors. The well‐defined, multiple quantized conductance states observed in these polymer‐based atomic switches show promise for the development of new multilevel memory devices.  相似文献   
14.
AgGaTe2 and AgAlTe2 layers were grown on a-plane sapphire substrates by closed-space sublimation. These compounds replace Cd in CdTe with group I and III elements, and are, hence, expected to be ideal novel candidate materials for solar cells. The grown layers were confirmed to be stoichiometric AgGaTe2 and AgAlTe2 by x-ray diffraction (XRD). The AgAlTe2 layers had strong preference for the (112) orientation. The XRD spectrum of the AgGaTe2 layer was different from that of the AgAlTe2 layer, and strong peaks were observed for (103) and (110) diffraction. The variation in orientations of the grown layers was analyzed in detail by use of XRD pole figures, which revealed that the AgGaTe2 layers had an epitaxial relationship with the a-plane sapphire substrates.  相似文献   
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Correlation of light emission, discharge structure, waveform of the discharge current, electrode configuration, and electromagnetic radiation is examined with the intent of obtaining an effective means for preventing electromagnetic interference (EMI) due to a short-gap discharge. The electromagnetic radiation (EMR) level resulting from a current step which, in turn, was formed by a discrete movement of a cathode spot was clearly recognized. A combination of needle rotor and needle post gave the smallest electromagnetic radiation level in the experiments.  相似文献   
18.
We devised a compensation technique that measures the admittance change of a limb submerged in an electrolyte solution in a cylinder. Using this technique, we evaluated the accuracy of admittance plethysmography and the validity of the parallel-conductor model on which the theory of blood flow measurement by electrical admittance (or impedance) plethysmography is based. From a theoretical point of view, if a limb is regarded as a parallel-conductor model, the admittance change due to blood pooling following venous occlusion should disappear when the resistivity of the solution is equal to that of the blood.  相似文献   
19.
Summary [2,5-Bis(trifluoromethyl)phenyl]acetylene [BTFPA; HCCC6H3-2, 5-(CF3)2]polymerized with W, Mo, and Nb catalysts to produce methanol-insoluble polymers in high yields. The poly(BTFPA) produced by the W(CO)6-based catalyst at 30 °C was soluble in p-(CF3)2C6H4, and had relatively high molecular weight ([]=0.352 dL/g in p-(CF3)2C6H4). The main chain of the polymer was composed of alternating double bonds, and the polymer was a dark brown solid. The temperature at which the weight loss of the polymer started was higher than 300 °C. The polymerization behavior and polymer properties for BTFPA are compared with those for phenylacetylene and [o-(trifluoromethyl)phenyl]acetylene.  相似文献   
20.
Summary The rate constants for intramolecular excimer formation, kDM, of poly(α-methylstyrene) with different molecular weight were determined by using picosecond pulse radiolysis. Values of kDM for poly(α-methylstyrene) are a little smaller than those for polystyrene with nearly same molecular weight. It appears to be mainly due to steric hindrance by methyl substituent of main chain.  相似文献   
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