Metaiodobenzylguanidine and heart rate variability in heart failure

It is assumed that the low-frequency power (LF) of heart rate variability (HRV) increases with progress of congestive heart failure (CHF), therefore positively correlating with cardiac 123I-metaiodobenzylguanidine (MIBG) washout. It is demonstrated here that HRV, including normalized LF, correlated inversely with MIBG washout and positively with the ratio of heart-to-mediastinum MIBG activity in controls and CHF patients, whereas these correlations were not observed within CHF patients. Thus MIBG washout may increase and HRV including normalized LF may decrease with CHF, although the HRV and MIBG measures may not similarly change in proportion to the severity of the cardiac autonomic dysfunction in CHF.     

A device analysis system based on laser scanning techniques

The organization of “A Device Analysis System Based on Laser Scanning Techniques” developed with the intention of measuring and analyzing the characteristics of the sample device, and the measured results with this system are presented.Since a sample-and-hold method for measurements of photoresponse current is employed, the dynamic (or static) photoresponse image can be obtained while the device under investigation is being operated in dynamic (or in static) and additionally, being checked on its functional operation with LSI evaluation unit. Images obtained are stored in digital image memories in real time and then processed with MPU in accordance with programs, in order to obtain the required information (ex. logic level of memory cell). And processed image(s) and laser reflected image superimposed on each other, are displayed on a color kinescope. As a result, even on dynamic type LSI such as dynamic MOS RAM, the logic levels of internal circuits could be successfully measured while in its dynamic operation, without contacting, in the atmospheric circumstance and moreover, in a nondestructive manner.In this report, measured results on a 4 K dynamic MOS RAM, CMOS shift register and a TTL logic IC are shown.This system is invaluable for the study of the operation of internal circuits not externally accessible and as an aid in testing with LSI tester and for failure analysis, at the stages of the design and the production.Besides, the resolution in depth could be improved by using an argon u.v. laser of shorter wavelength (λ = 351 nm, 364 nm) than HeNe laser (λ = 632.8 nm).     

Statistical Evaluation of Influencing Factors on Prognosis of Gastric Cancer Patients

Behaviormetrika - A latent factor, which will be called as “prognostic factor”, is extracted from nine explanatory variables observed mainly at the time of surgery from categorical...     

Electrical properties of sintered EuZrO3  EuNbO3 and EuNbO3

Electrical resistivity of two-phase products [yEuZrO₃ + (1 ? y) EuNbO₃] increased continuously with y, and a transition from a metallic to semiconducting characteristic occured at y = 0.14. The resistivity varied almost linearly with temperaure in the range y = 0 to y = 0.24, and thermal coefficients of resistivity at 300 K for the products decreased from +5.9 × 10^?4 K^?1 to ?7.4 × 10^?4 K^?1 according to the value of y. At y = 0.14, the thermal coefficient was almost zero. Thermal coefficients of electrical resistivity for the niobates with various oxygen contents were all positive in the range $\text{2.55 <}\text{O}\text{Nb}\text{< 3.24}$ and exhibited a sharp minimum at $\text{O}\text{Nb}\text{= 2.92}$. In all these niobates, Eu_xNbO₃ was a major phase and Eu₃NbO₆ or EuNbO₂ was detected as a second phase in the range $\text{O}\text{Nb}\text{> 3}$ or $\text{O}\text{Nb}\text{< 3}$ respectively. Peaks in the resistivity curves were correlated with a magnetic ordering temperature for samples with an overall ratio $\text{O}\text{Nb}\text{> 3}$.     

Long-cavity multiple-phase-shift distributed feedback laser diodefor linewidth narrowing

A long-cavity multiple-phase-shift distributed-feedback (MPS-DFB) laser diode with three phase shifts in the corrugation for linewidth narrowing is discussed. The threshold gain difference and the field uniformity along the laser cavity of the MPS-DFB laser are analyzed by varying the amount and the position of phase shifts using the coupled-wave theory. It is shown that a large threshold gain difference and a uniform field distribution are obtained in the MPS-DFB laser with some special amount and position of phase shifts. Based on the analysis, a MPS-DFB laser with a 1200-μm-long cavity and three phase shifts was fabricated. This MPS-DFB laser exhibits stable single-mode operation and shows a very narrow linewidth of 830 kHz at an optical output power of 25 mW     

Electrical properties of sintered EuTiO3  EuNbO3

Two-phase sintered products [yEuTiO₃ + (1?y)EuNbO₃] were investigated as electrical-resistor materials. Electrical resistivities of the products did not depend on y in the range 0 < y < 0.96, and rapidly increased with increasing y over y = 0.96. The sintered products were metallic conductors from y = 0 to y = 0.96, and were semiconductors at y > 0.96. Thermal coefficients of resistivity for sintered products varied continuously with y, and became a maximum of 2.8 × 10^?3 K^?1 at y = 0.75 and a minimum around y = 1.00. The coefficient was positive at y < 0.96 and negative at y > 0.96. The absolute value of the thermal coefficient of resistivity minimized, namely ($\text{1}\text{?}$) ($\text{d}\text{?}\text{dT}\text{) = 0}$, at y = 0.96.