Development of AAS resin by the emulsion–suspension polymerization method

In order to improve the weatherability of acryonitrile—styrene—butadiene rubber graft polymer (ABS resin), an attempt was made to develop a resin (AAS resin) in which acrylic rubber of good weatherability was used instead of butadiene rubber. First, by copolymerizing dicyclopentenyl-methacrylate (DCP-MA,3%) with butyl acrylate, crosslinked acrylic rubber was obtained. This also introduced grafting sites into the rubber. Next, methods of graft copolymerizing styrene and acrylonitrile with this rubber were examined. An emulsion–suspension polymerization method was developed in which the initial stage of the polymerization, emulsion polymerization, changed into suspension polymerization during the process. By this method of polymerization, rubber particles were combined and enlarged, bringing about a graft-type resin with high impact resistance. This polymerization method is industrially useful because particle-shaped resins are obtained without the need of a salting-out process. The AAS resin, obtained in this way, has much improved weatherability over ABS resin and shows strength equal to that of ABS resin. © 1992 John Wiley & Sons, Inc.     

DNA recognition by a {beta}-sheet

DNA recognition by a ß-sheet is discussed in the lightof crystal structures of the MetJ and Arc repressors. The DNAbinding geometry of a ß-sheet can be understood interms of (i) close fitting of the two surfaces and (ii) matchingof residue and base positions. A ß-sheet is not entirelyflat but has a curvature. A ß-sheet of the Met-Arcfamily faces the DNA major groove with its convex surface; thelocal DNA major groove is deepest at the centre. The ß-sheetfollows 6 bp; every two residues face the DNA and the firstand fifth residues, which are separated by 13.2 Å, bind,respectively, to the third and sixth bases, which are separatedby 13.5 Å, on the same DNA strand.     

Microstructure and Thermal Shock Resistance of Molten Glass-Coated Carbon Materials Fabricated by Interfacial Control

Carbon substrates were coated completely with a molten silicate glass, where the wettability of carbon to glass was improved by infiltration and pyrolysis of perhydropolysilazane. Microstructures of the carbon–glass interface were dependent on P n ₂ during coating. Coating at lower P n ₂ induced the formation of cristobalite at the carbon–glass interface. When the coating was performed at higher P n ₂, the glass and carbon were strongly adhered, without the formation of cristobalite. Coating at higher P n ₂ improved the thermal shock resistance of the glass layer, because crack initiation was not induced by the phase transformation of cristobalite during the cooling process. In the case of coating at higher P n ₂, an oxynitride glass layer was formed at the glass subsurface by dissolution of N₂. A porous glass subsurface layer with uniform spherical micro-pores could be produced by soaking near the glass transition temperature in a steam environment. The porous layer with fine and homogeneous microstructure acts as a thermal shock absorbing layer, so that glass-coated carbon with a porous glass layer has excellent thermal shock resistance in addition to steam oxidation resistance.     

Synthesis of γ-Ga2O3–Al2O3 Solid Solutions by the Glycothermal Method

The reaction of mixtures of aluminum isopropoxide and gallium acetylacetonate in 1,4-butanediol or 1,5-pentanediol at high temperatures (glycothermal reaction) directly gave the γ-Ga₂O₃–Al₂O₃ solid solutions, which had high catalytic activities for selective reduction of NO using methane as the reducing agent. However, the reaction with a higher Al/(Ga+Al) charged ratio yielded the glycol derivative of boehmite as a by-product and the catalytic activity of the solid solution decreased. Therefore, synthesis of the solid solution using various glycols was examined and it was found that solid solutions with high Al contents without contamination of the glycol derivative of boehmite were obtained by using 1,6-hexanediol as a reaction medium. The solid solution exhibited a higher NO conversion than that synthesized in other glycols.     

Residues important for the function of a multihelical DNA binding domain in the new transcription factor family of Cam and Tet repressors

We report that some prokaryotic repressors including CamR andTetR belong to the same family. CamR and TetR bind to DNA usinga multihelical DNA binding domain (DBD) at the N-termini ofthe proteins, while the C-termini are important for regulatingthe DNA binding in a manner dependent on their co-factors (camphorfor CamR, tetracycline for TetR). In all, 11 important aminoacid positions have been identified in the CamR DBD by the systematicsubstitution of residues by Ala. Of the 11 positions, 10 areeither buried in the core, and thus important for creating thehydrophobic environment, or exposed on the surface, and thusimportant for binding to DNA. The eleventh residue, Gly, seemsto be important for a loop structure. The DNA binding mode ofthis type of DBD and a general mechanism of regulating theirDNA binding are discussed in reference to the crystal structureof TetR [Hinrichs et al., (1994) Science, 264, 418–420].     

Radiation-induced polymerization of ethylene in pilot plant. III. Heavy-phase recycling process

Radiation-induced polymerization of ethylene using aqueous tert-butyl alcohol as medium was carried out in a large-scale pilot plant with a 50-liter central source-type reactor at a pressure of 105 to 395 kg/cm², temperature of 30° to 80°C, mean dose rate of 4.5 × 10⁴ to 1.9 × 10⁵ rads/hr, ethylene feed rate of 5.5 to 23.5 kg/hr, and medium feed rate of 21 to 102 l./hr. The space–time yield and molecular weight of the polymer were in the range of 4.7 to 16.8 g/l.-hr and 1.3 × 10⁴ to 8.9 × 10⁴, respectively. The space–time yield and molecular weight increased with mean residence time at 30°C, whereas at 80°C they became almost independent of the time. The space–time yield increased with pressure and dose rate, slightly decreased with temperature, and was maximum at ethylene molar fraction of 0.5. The polymer molecular weight increased with pressure and ethylene molar fraction, and decreased with dose rate and temperature. The total amount of deposited polymer on the reactor wall, source case wall, and scraping blades was usually less than 1 kg, which was negligibly small for the analysis of polymerization. Continuous discharge of the polymer slurry and production of fine-powder polyethylene were successfully carried out. In the central source-type reactor, a dose rate of 1.9 × 10⁵ rads/hr was obtained with a ⁶⁰Co source of ca. 12 kCi.     

Pulsed Electric Current Sintering of Silicon Nitride

Pulsed electric current sintering (PECS) has been used to densify α-Si₃N₄ powder doped with oxide additives of Y₂O₃ and Al₂O₃. A full density (>99%) was achieved with virtually no transformation to β-phase, resulting in a microstructure with fine equiaxed grains. With further holding at the sintering temperature, the α-to-β phase transformation took place, concurrent with an exaggerated grain growth of a limited number of elongated β-grains in a fine-grained matrix, leading to a distinct bimodal grain size distribution. The average grain size was found to obey a cubic growth law, indicating that the growth is diffusion-controlled. In contrast, the densification by hot pressing was accompanied by a significant degree of the phase transformation, and the subsequent grain growth gave a broad normal size distribution. The apparent activation energy for the phase transformation was as high as 1000 kJ/mol for PECS, almost twice the value for hot pressing (∼500 kJ/mol), thereby causing the retention of α-phase during the densification by PECS.     

Phase evolution and <110>-orientation mechanism in RTGG-processed BaTiO3 ceramics with electrical properties

The <110>-oriented BaTiO₃ ceramics were fabricated using BaCO₃ matrix and H_1.08Ti_1.73O₄.nH₂O (HTO) template particles, and the mechanism of BaTiO₃ phase formation was investigated. The dielectric, ferroelectric, and piezoelectric properties were also investigated. The transformation of the HTO phase into the TiO₂ bronze or TiO₂ (B) phase was observed at 600°C, where the BaTiO₃ nucleation was accompanied by the formation of a Ba₂TiO₄ phase. The TiO₂ phase reacted with the Ba₂TiO₄ phase at 800°C to give a BaTiO₃ phase, whereas its reaction with the BaTiO₃ resulted in the formation of BaTi₂O₅ phase that got decomposed into BaTiO₃ and Ba₆Ti₁₇O₄₀ phase at sintering temperature ≥1300°C. Sintering with samples’ embedding in BaTiO₃ powders prevented the formation of the Ba₆Ti₁₇O₄₀ secondary phase. The crystallographic orientation along the <110> direction (F₁₁₀) was developed by the epitaxial grain growth mechanism. In addition to the contribution of the grain-size increment for enhancing the F₁₁₀, the preservation of the platelike structure was also found to have a significant impact. The ceramics prepared by the embedded sintering (grain size ≈12.4 µm and F₁₁₀ = 83%) exhibited the room-temperature dielectric constant of 1708 and piezoelectric strain constant of 445 pm/V, which are higher than those of the BaTiO₃ ceramics with randomly oriented grains.     

Time Averaging Algorithms with Stopping Rules for Multi‐Agent Consensus with Noisy Measurements

A time averaging technique is introduced to consensus algorithms in networked multi‐agent systems under a noisy environment. Each agent communicates with its neighboring agents via a constant gain, while the time averaging states of the agents are considered as the values for agreement. The variation of the time averaging states then is evaluated at a specific number of iterations, where the number is given explicitly in terms of parameters related to the consensus accuracy and its probabilistic guarantee. This result establishes a rigorous stopping rule for the multi‐agent consensus with noisy measurements. Several results on this type of stopping rules are provided for undirected, directed, and time‐varying communication graphs. These theoretical results are illustrated through numerical examples.     

Relationship between crystallinity and device characteristics of In‐Sn‐Zn oxide

We have reported that the transistors having the c‐axis‐aligned crystalline (CAAC) In‐Ga‐Zn oxide (IGZO) show good performance. Recently, In‐Sn‐Zn Oxide (ITZO) has attracted much attention because of its high electron mobility, as well as IGZO. However, it has been reported that ITZO field effect transistors (FET) tend to have positive Vth (normally‐on characteristics) and poor reliability compared with IGZO‐FETs. We have reported that high‐performance and high‐reliability OS‐FETs can be fabricated by using CAAC‐IGZO, which has high crystallinity and has no clear grain boundaries, as an active layer. Therefore, we have fabricated CAAC‐ITZO thin films to improve performance of ITZO‐FETs by using CAAC‐ITZO as an active layer. In addition, FETs employing CAAC‐ITZO have better characteristics and reliability than FETs using nano‐crystal ITZO. Furthermore, constant photocurrent method (CPM) measurement was carried out in order to estimate density of deep‐level defect states caused by oxygen vacancies in oxide semiconductors. The results show that CAAC‐ITZO has lower density of deep‐level defect states than nano‐crystal ITZO. We attribute the improvement in reliability of ITZO‐FETs to a decrease in deep‐level defect states of an ITZO active layer, as is the case with IGZO.