Application of CO2 laser heating zone drawing and zone annealing to nylon 6 fibers

Nlon 6 fibers were zone drawn and zone annealed by using a continuous wave carbon dioxide laser to develop their mechanical properties. A laser‐heating zone drawing was carried out under a applied tension of 35.4 MPa at a power density of 9.65 W · cm^?2, and then the zone‐drawn fiber was annealed. A laser‐heating zone annealing was carried out in two steps at a power density of 9.65 W · cm^?2; the first step was carried out under 423 MPa and the second under 517 MPa. The treating temperature of the fiber heated by the CO₂ laser was measured by using an infrared thermographic camera equipped with a magnifying lens. The treating temperature at the zone drawing is 138°C, and those at the first and the second zone annealing are 121 and 125°C, respectively. The second laser‐heated zone‐annealed fiber has a birefringence of 65.2 × 10^?3, a degree of crystallinity of 54%, and a storage modulus of 21 GPa at 25°C. Wide‐angle X‐ray diffraction patterns for the laser‐heated zone‐drawn and the zone‐annealed fibers show (200) reflection and (002/202) doublet due to only an α form on the equator. The laser‐heated zone‐drawn fiber has a melting endotherm peaking at 216°C and a trace of shoulder on the higher temperature side of its peak, and the laser‐heated zone‐annealed fibers have a single melting endotherm peaking at 216°C. © 2002 Wiley Periodicals, Inc. J Appl Polym Sci 83: 1711–1716, 2002     

The role of pressure on thin amorphous carbon films deposited using microwave surface wave plasma CVD

We report the effects of gas composition pressure (GCP) on the optical, structural and electrical properties of thin amorphous carbon (a-C) films grown on p-type silicon and quartz substrates by microwave surface wave plasma chemical vapor deposition (MW SWP CVD). The films, deposited at various GCPs ranging from 50 to 110 Pa, were studied by UV/VIS/NIR spectroscopy, atomic force microscopy, Raman spectroscopy, X-ray photoelectron spectroscopy and current–voltage characteristics. The optical band gap of the a-C film was tailored to a relatively high range, 2.3–2.6 eV by manipulating GCPs from 50 to 110 Pa. Also, spin density strongly depended on the band gap of the a-C films. Raman spectra showed qualitative structured changes due to sp³/sp² carbon bonding network. The surfaces of the films are found to be very smooth and uniform (RMS roughness < 0.5 nm). The photovoltaic measurements under light illumination (AM 1.5, 100 mW/cm²) show that short-circuit current density, open-circuit voltage, fill factor and photo-conversion efficiency of the film deposited at 50 Pa were 6.4 μA/cm², 126 mV, 0.164 and 1.4 × 10^− 4% respectively.     

The effects of oxygen diffusion on the surface photooxidation of polystyrene

This paper further illustrates the applicability of multiple internal reflectance infrared spectroscopy to the analysis of near-surface photooxidation. The results are compared with transmission infrared spectra to evaluate compositional gradients resulting from photooxidation and the influence of oxygen diffusion. The sample was a solvent-cast film of atactic, narrow distribution polystyrene, M_w of 100,000, that had been drawn to a ratio of 3.0 at 110°C by solid state coextrusion. Irradiation of these thin films, ～25μm thickness, was performed on exposure to air at 35°C for periods of up to 6 h using a mercury source emitting at 254 nm. On photooxidation, a board peak appears at 3200–3500 cm^?1, attributable to hydroperoxide formation. The most dramatic increase in the infrared spectra is found for a carbonyl band at 1730 cm^?1. It appears to result from an aromatic acid group since it is shifted to 1660 cm^?1 on immersion of the oxidized polystyrene films in aqueous ammonium hydroxide. It is confirmed that the photooxidation of polystyrene occurs preferentially at the surface and that this reaction rate is greatly reduced in the drawn polystyrene film.     

Gelation of poly(vinyl alcohol)/phenol/water solutions and gel spinning

The light transmittance of the gels of poly(vinyl alcohol) (PVA)/phenol/water solutions was examined for the entire range of phenol/water content. Excellent transparency was found for the gels with phenol contents of 70–95 vol %. In full consideration of the results for the transparency and melting temperature of the gels and the viscosity and gelation ability of solutions, the PVA solutions of 75 vol % phenol content were selected for the gel spinning. The maximum dynamic moduli of drawn filaments at 25°C (room temperature) were 42 GPa (15x) for atactic PVA and 45 GPa (14x) for syndiotacticity-rich PVA. © 1995 John Wiley & Sons, Inc.     

Formation and Properties of Ln-Si-O-N Glasses (Ln = Lanthanides or Y)

Homogeneous Y-Si-O-N glasses containing 15 or 20 eq% nitrogen (N) were prepared from compositions with Y/Si ratios in the vicinity of that of the lowest eutectic point on the Y₂O₃–SiO₂ phase diagram. The liquidus on the phase diagram shifted toward lower temperatures by incorporation of N. The density, the elastic moduli, and the glass transition temperature of the Y-Si-O-N glasses increased with incorporation of N. This is due to the closer packing of atoms in the glasses by the substitution of N, which is in three-fold coordination with Si, for O which is in two-fold coordination, and the stronger covalent nature of the Si–N bond compared with the Si–O bond. The coefficient of thermal expansion of the Y-Si-O-N glasses increased with increasing Y content, because the discontinuity of the glass network developed with increasing nonbridging anions by the introduction of Y. In contrast, the glass transition temperature and the elastic moduli increased with Y content due to the high coordination of Y for O, and the relatively high cationic field strength of Y. Furthermore, the effect of cationic field strength on properties of Ln-Si-O-N glasses (Ln = lanthanides or Y) is discussed.     

Processing Strategy for Producing Highly Anisotropic Silicon Nitride

Silicon nitride with a preferred orientation of large elongated grains was obtained by tape casting of raw powder slurry seeded with rodlike β-Si₃N₄ particles, followed by a gas pressure sintering under 1 MPa nitrogen pressure. The large elongated grains developed from seeds lay in planes parallel to the casting direction in a two-dimensional distribution. Increased fracture toughness (11.1 MPa·m^1/2) and bending strength (1100 MPa) were achieved in the direction perpendicular to the grains alignment compared to specimens with a random distribution of elongated grains. Morover, the specimens exhibited a high Weibull modulus of 46 due to the uniform distribution of large grains.     

Diamond-like carbon thin films by microwave surface-wave plasma CVD aimed for the application of photovoltaic solar cells

The nitrogen doped diamond-like carbon (DLC) thin films were deposited on quartz and silicon substrates by a newly developed microwave surface-wave plasma chemical vapor deposition, aiming the application of the films for photovoltaic solar cells. For film deposition, we used argon as carrier gas, nitrogen as dopant and hydrocarbon source gases, such as camphor (C₁₀H₁₆O) dissolved with ethyl alcohol (C₂H₅OH), methane (CH₄), ethylene (C₂H₄) and acetylene (C₂H₂). The optical and electrical properties of the films were studied using X-ray photoelectron spectroscopy, Nanopics 2100/NPX200 surface profiler, UV/VIS/NIR spectroscopy, atomic force microscope, electrical conductivity and solar simulator measurements. The optical band gap of the films has been lowered from 3.1 to 2.4 eV by nitrogen doping, and from 2.65 to 1.9 eV by experimenting with different hydrocarbon source gases. The nitrogen doped (flow rate: 5 sccm; atomic fraction: 5.16%) film shows semiconducting properties in dark (i.e. 8.1 × 10^{− 4} Ω^{− 1} cm^{− 1}) and under the light illumination (i.e. 9.9 × 10^{− 4} Ω^{− 1} cm^{− 1}). The surface morphology of the both undoped and nitrogen doped films are found to be very smooth (RMS roughness ≤ 0.5 nm). The preliminary investigation on photovoltaic properties of DLC (nitrogen doped)/p-Si structure show that open-circuit voltage of 223 mV and short-circuit current density of 8.3 × 10^{− 3} mA/cm². The power conversion efficiency and fill factor of this structure were found to be 3.6 × 10^{− 4}% and 17.9%, respectively. The use of DLC in photovoltaic solar cells is still in its infancy due to the complicated microstructure of carbon bondings, high defect density, low photoconductivity and difficulties in controlling conduction type. Our research work is in progress to realize cheap, reasonably high efficiency and environmental friendly DLC-based photovoltaic solar cells in the future.     

Fracture toughness of silica particulate‐filled epoxy composite

The relationship between the postcuring conditions and fracture toughness on three silica particulate‐filled epoxy composites was investigated. The glass transition temperature, T_g, and the fragility parameter, m, derived from the thermo‐viscoelasticity, were used to characterize the composites, which were postcured under various conditions. The glass transition temperature and fragility both depended on both of the curing conditions and the volume fraction of silica particles. The glass transition temperature increased with the postcuring time and temperature, while the fragility generally decreased as the volume fraction increased. There was no direct correlation between the glass transition temperature and fragility. The fracture toughness depended on both the glass transition temperature and fragility. The composites with a high glass transition temperature and low fragility had high fracture toughness. These results indicate that the glass transition temperature and fragility are useful parameters for estimating the fracture toughness of the silica particulate‐filled epoxy composites. © 2002 Wiley Periodicals, Inc. J Appl Polym Sci 86: 2261–2265, 2002     

Synthesis of nitrogen incorporated diamond-like carbon thin films using microwave surface-wave plasma CVD

Nitrogenated diamond-like (DLC:N) carbon thin films have been deposited by microwave surface wave plasma chemical vapor deposition on silicon and quartz substrates, using argon gas, camphor dissolved in ethyl alcohol composition and nitrogen as plasma source. The deposited DLC:N films were characterized for their chemical, optical, structural and electrical properties through X-ray photoelectron spectroscopy, UV/VIS/NIR spectroscopy, Raman spectroscopy, atomic force microscope and current–voltage characteristics. Optical band gap decreased (2.7 to 2.4 eV) with increasing Ar gas flow rate. The photovoltaic measurements of DLC:N / p-Si structure show that the open-circuit voltage (V_oc) of 168.8 mV and a short-circuit current density (J_sc) of 8.4 μA/cm² under light illumination (AM 1.5 100 mW/cm²). The energy conversion efficiency and fill factor were found to be 3.4 × 10^{− 4}% and 0.238 respectively.     

Fracture toughness of bisphenol A‐type epoxy resin

The relationship between the postcuring conditions and the fracture toughness of a bisphenol A‐type epoxy resin cured with acid anhydride was investigated. The glass transition temperature and fragility parameter, derived from the thermo‐viscoelasticity, were used to characterize the epoxy resin postcured under various conditions. Relationship between these two parameters and the fracture toughness was then investigated, based on the fractography results of a microscopic roughness examination of a fractured surface. The values of the glass transition temperature and fragility greatly depended on the postcuring conditions. The glass transition temperature was approximately 400 K when the crosslinking reaction was saturated. The fragility was independent of the saturation of the reaction and varied between 50 and 180. The results of the fracture test and fractography examination showed that there was no direct correlation between the glass transition temperature, the fracture toughness, and the roughness. On the other hand, there was a correlation between the fragility, fracture toughness, and roughness when the glass transition temperature saturated (at 400 K). As the fragility decreased from 180 to 50, the fracture toughness increased from 0.6 to 1.1 MPa · m^1/2 at the same glass transition temperature. © 2002 Wiley Periodicals, Inc. J Appl Polym Sci 10: 2266–2271, 2002