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61.
The role of nitrogen dioxide in the selective reduction of NO by propane over a Cu-MFI zeolite is investigated. NO2 and NO reductions were carried out under similar conditions of reaction. In the presence of oxygen, the reduction of NO by C3H8 does not differ significantly from that of NO2. In the absence of oxygen, the reduction of NO2 by propane occurs with a partial decomposition of the nitric dioxide molecule. Such a decomposition leads to the formation of oxygen, which is responsible for the increase in catalytic activity by comparison with the same reaction performed with NO. NO2 formed and released in the gas phase during the reduction of NO by propane in the presence of oxygen does not play a predominant role in the catalytic process.  相似文献   
62.
Utilizing cultured lenses from normal and homozygous glutathione peroxidase (GSHPx-1) knockout mice and inhibitors for GSSG Reductase (GSSG Red), 1,3-bis(2-chlorethyl)-1-nitrosourea (BCNU) and catalase (Cat), 3-aminotriazole (3-AT), the ability to degrade H2O2 was examined at two H2O2 concentrations, 300 microM and 80 microM. It was found that GSHPx-1 contributed about 15% to the H2O2 degradation. The Cat contribution was concentration dependent being about 30% at 300 microM H2O2 and approximately 8% to 15% at 80 microM H2O2. GSH loss measured as nonprotein thiol (NP-SH) was shown to be linked to most of the remaining H2O2 degradation accounting for about 54% to 72% of the H2O2 degradation at 300 microM and 80 microM, respectively. However, based on evaluation of the ability of GSH to nonenzymatically degrade H2O2, it can only account for about 36% at 300 microM and 19% at 80 microM H2O2 of the observed lens H2O2 degradation. It is, therefore, concluded that lens GSH must be involved in other reactions either directly or indirectly related to H2O2 degradation.  相似文献   
63.
Air trench structures for reduced-size bends in low-index contrast waveguides are proposed. To minimize junction loss, the structures are designed to provide adiabatic mode shaping between low- and high-index contrast regions, which is achieved by the introduction of "cladding tapers." Drastic reduction in effective bend radius is predicted. We present two-dimensional (2-D) finite-difference time-domain/effective index method simulations of bends in representative silica index contrasts. We also argue that substrate loss, while present, can be controlled with such air trenches and reduced to arbitrarily low levels limited only by fabrication capabilities. The required trench depth, given an acceptable substrate loss, is calculated in three dimensions using an approximate equivalent current sheet method and also by a numerical solver for full-vector leaky modes. A simple, compact waveguide T-splitter using air trench bends is presented.  相似文献   
64.
The radiotracer technique as a means to investigate the corrosion of zirconium, tantalum, and a Ta-40Nb alloy in fluoride containing azeotropic nitric acid Zirconium and tantalum as well as the tantalum 40% niobium alloy are of considerable technical importance due to their high corrosion resistance against numerous corrosive media. With respect to corrosion testing in analytically pure azeotropic nitric acid in the temperature range between 20 and 121°C, corrosion rates were determined for zirconium: 7 · 10?6 to 5 · 10?4 mm/y, for tantalum: 10?8 to 4 · 10?6 mm/y, and for the Ta-40Nb alloy: 2 · 10?7 to 8 · 10?6 mm/y [1]. These corrosion rates will be markedly increased by adding small amounts of fluorides or by fluoride impurities. The radiotracer method after neutron activation was applied to determine the corrosion rates in azeotropic fluoride containing nitric acid. Even minute additions of fluorides strongly affect the corrosion resistance of zirconium. In the range between 0.15 and 10 ppm F? and at a temperature of 108°C, corrosion rates between 5.3 · 10?3 and 3.1 mm/y were measured. It was impossible to establish a limit for the fluoride concentration, below which the corrosion rate of zirconium will not be adversely influenced. The corrosion rates of tantalum and the Ta-40Nb alloy are considerably increasing above a fluoride concentration of 10 ppm. The highest corrosion rates measured were between 8.4 · 10?3 mm/y at 50°C/280 ppm F? and 1.4 · 10?2 mm/y at 110°C/320 ppm F?. Within the range of this investigation, the corrosion resistance of tantalum was higher than that of the Ta-40Nb alloy by one order of magnitude. The corrosion resistance of zirconium and tantalum was not influenced by any treatment of the samples before testing.  相似文献   
65.
3,3'-Iminodipropionitrile (IDPN) causes a permanent syndrome of abnormalities in spontaneous behavior and a deficit in the axonal transport of neurofilaments (NF). Male Long-Evans rats were given IDPN (0, 200, 400, 600, or 1000 mg/kg, ip, in saline) and assessed for behaviors indicative of vestibular function at 1 week post-dosing. The morphology of the peripheral vestibular system in animals dosed with 0, 200, 400, 600, 800, or 1000 mg/kg of IDPN was assessed at 4 days post-dosing by light microscopy on semithin sections. Animals receiving 1000, 1500, or 2000 mg/kg of IDPN were assessed for morphological alterations in the vestibular ganglion at 8 days post-dosing. Behavioral data indicated a dose-dependent loss of vestibular function after IDPN, the vestibular deficits first appearing at the 400 mg/kg dose level. IDPN exposure was also observed to result in degeneration of the vestibular sensory hair cells. Degenerative changes were already found at the 400 mg/kg dose level, and were extensive after 1000 mg/kg. In the ganglion neurons, no effects were observed after 1000 mg/kg of IDPN, but perikaryal accumulations of NF were found after 1500 or 2000 mg/kg. In conclusion, the data showed that low doses of IDPN are toxic to the vestibular hair cells, and suggest a link between this action and the effects of the chemical on spontaneous behavior. In addition, doses of IDPN larger than those required for toxicity to the vestibular sensory cells, induced accumulations of NF in the myelinated cell bodies of the vestibular ganglion neurons.(ABSTRACT TRUNCATED AT 250 WORDS)  相似文献   
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67.
PURPOSE: The relationship between seizure frequency and both health care costs and quality of life (QOL) was investigated in a retrospective, cross-sectional, multicenter study in France, Germany, and the United Kingdom. METHODS: Three hundred outpatients with stable partial epilepsy were approximately evenly distributed among five seizure-frequency groups, ranging from seizure-free in the last 3 months (group 1) to daily seizures (group 5). Economic data, obtained through patient interviews and record abstraction, comprised direct medical costs, direct nonmedical costs, and indirect costs for the preceding 3 months. Total societal costs in the three countries were pooled and converted to United States dollar equivalents. QOL was assessed through a self-administered questionnaire, the Functional Status Questionnaire (FSQ). RESULTS: Mean total costs increased from $780 in group 1 to $2,171 in group 5 (p = 0.0001), with significant increases in each cost category as seizure frequency increased. Greater seizure frequency also significantly (p = 0.0270) correlated with lower employment rates, which ranged from 57% in group 1 to 30% in group 5. QOL declined as seizure frequency increased. Particularly affected were basic and intermediate activities of daily living (ADL), mental health, social activity, and feeling about health. CONCLUSIONS: The study results show that higher seizure frequencies are associated with higher direct and indirect costs and with reduced QOL for patients with epilepsy.  相似文献   
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70.
An EKV-based high voltage MOSFET model is presented. The intrinsic channel model is derived based on the charge based EKV-formalism. An improved mobility model is used for the modeling of the intrinsic channel to improve the DC characteristics. The model uses second order dependence on the gate bias and an extra parameter for the smoothening of the saturation voltage of the intrinsic drain. An improved drift model [Chauhan YS, Anghel C, Krummenacher F, Ionescu AM, Declercq M, Gillon R, et al. A highly scalable high voltage MOSFET model. In: IEEE European solid-state device research conference (ESSDERC), September 2006. p. 270–3; Chauhan YS, Anghel C, Krummenacher F, Maier C, Gillon R, Bakeroot B, et al. Scalable general high voltage MOSFET model including quasi-saturation and self-heating effect. Solid State Electron 2006;50(11–12):1801–13] is used for the modeling of the drift region, which gives smoother transition on output characteristics and also models well the quasi-saturation region of high voltage MOSFETs. First, the model is validated on the numerical device simulation of the VDMOS transistor and then, on the measured characteristics of the SOI-LDMOS transistor. The accuracy of the model is better than our previous model [Chauhan YS, Anghel C, Krummenacher F, Maier C, Gillon R, Bakeroot B, et al. Scalable general high voltage MOSFET model including quasi-saturation and self-heating effect. Solid State Electron 2006;50(11–12):1801–13] especially in the quasi-saturation region of output characteristics.  相似文献   
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